CR5AS-12 Thyristor Medium Power Use REJ03G0346-0200 Rev.2.00 Apr.05.2005 Features • IT (AV) : 5 A • VDRM : 600 V • IGT : 100 µA • Lead Mounted Type • Non-Insulated Type • Glass Passivation Type Outline RENESAS Package code: PRSS0004ZD-D (Package name: DPAK(L)-(3)) 4 2, 4 1. Cathode 2. Anode 3. Gate 4. Anode 3 1 1 2 3 Applications Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for autocycle, electric tool, strobe flasher, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Rev.2.00, Apr.05.2005, page 1 of 7 Symbol Voltage class 12 Unit VRRM VRSM VR(DC) VDRM VD(DC) 600 720 480 600 480 V V V V V CR5AS-12 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) Ratings 7.8 5 Unit A A ITSM 90 A I2 t 33 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 0.5 0.1 6 6 0.3 – 40 to +125 – 40 to +125 0.26 W W V V A °C °C g Conditions Commercial frequency, sine half wave 180° conduction, Tc = 88°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 220 Ω. Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 2.0 Unit mA Repetitive peak off-state current IDRM — — 2.0 mA On-state voltage VTM — — 1.8 V Gate trigger voltage Gate non-trigger voltage VGT VGD — 0.1 — — 0.8 — V V Gate trigger current Holding current IGT IH 1 — — 3.5 100Note3 — µA mA Thermal resistance Rth (j-c) — — 3.0 °C/W Test conditions Tj = 125°C, VRRM applied, RGK = 220 Ω Tj = 125°C, VDRM applied, RGK = 220 Ω Tc = 25°C, ITM = 15 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 125°C, VD = 1/2 VDRM, RGK = 220 Ω Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 25°C, VD = 12 V, RGK = 220 Ω Junction to caseNote2 Notes: 2. The measurement point for case temperature is at anode tab. 3. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (µA) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 220 Ω resistance between the gate and cathode. Rev.2.00, Apr.05.2005, page 2 of 7 CR5AS-12 Performance Curves 102 7 Tc = 25°C 5 3 2 Rated Surge On-State Current 100 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 VFGM = 6V PGM = 0.5W PG(AV) = 0.1W VGT = 0.8V 7 5 3 2 IGT = 100µA IFGM = 0.3A (Tj = 25°C) 7 VGD = 0.1V 5 -2 10 23 5710-1 23 57 100 23 57 10123 57102 23 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 × 100 (%) 103 7 5 3 2 #1 #2 Typical Example IGT(25°C) # 1 11µA # 2 61µA 102 7 5 3 2 101 7 5 3 V = 6V 2 D RL = 60Ω 100 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) 1.0 Gate Trigger Voltage (V) 40 Gate Trigger Current vs. Junction Temperature –1 Tj = 25°C 0.9 Distribution 0.8 0.7 Typical Example 0.6 0.5 0.4 0.3 0.2 0.1 0 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.2.00, 50 Gate Characteristics Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 60 Conduction Time (Cycles at 60Hz) Apr.05.2005, page 3 of 7 Transient Thermal Impedance (°C/W) Gate Voltage (V) 7 5 3 2 70 On-State Voltage (V) 102 101 80 0 100 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 7 5 3 2 90 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 Junction to ambient 102 7 5 3 2 101 7 5 3 2 Junction to case 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 Time (s) CR5AS-12 Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 14 90° 120° 12 60° 10 8 6 θ = 30° θ 4 360° Resistive, inductive loads 2 0 160 180° Case Temperature (°C) Average Power Dissipation (W) 16 0 1 2 3 4 5 6 7 120 Resistive, inductive loads 100 80 60 40 0 8 θ = 30° 90° 60° 0 1 2 3 180° 120° 4 5 6 7 8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 140 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 θ = 30° 40 60° 90° 120° 20 180° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ambient Temperature (°C) 160 140 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 θ = 30° 60° 90° 20 120° 180° 0 0 1 2 Aluminum Board 80×80×t2.3 40 3 4 5 6 8 7 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 16 160 14 140 θ 120 360° Resistive loads θ 12 θ Case Temperature (°C) Ambient Temperature (°C) Average Power Dissipation (W) θ 360° 20 160 180° 360° 10 Resistive loads 8 90° θ = 30° 60° 120° 6 4 2 0 0 1 2 3 4 5 6 7 Apr.05.2005, page 4 of 7 8 θ 100 80 60 40 θ = 30° 20 Average On-State Current (A) Rev.2.00, 140 0 0 1 2 60° 90° 120° 180° 3 4 5 6 7 Average On-State Current (A) 8 CR5AS-12 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) θ 120 360° Resistive loads Natural convection 100 80 60 θ = 30° 60° 40 90° 120° 20 180° 160 0 θ 120 θ 360° Resistive loads Natural convection 100 80 θ = 30° 60° 90° 120° 180° 60 40 20 0 1 2 3 4 5 6 7 Average On-State Current (A) Average On-State Current (A) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Gate to Cathode Resistance Typical Example RGK = 220Ω 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 103 7 Typical Example 5 3 2 8 Tj = 125°C 102 7 5 3 2 101 7 5 3 2 100 10-2 2 3 5 710-1 2 3 5 7100 2 3 5 7 101 Junction Temperature (°C) Gate to Cathode Resistance (kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature 160 Tj = 125°C RGK = 220Ω 140 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Rate of Rise of Off-State Voltage (V/µs) Rev.2.00, Aluminum Board 80×80×t2.3 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 220Ω) × 100 (%) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) θ Ambient Temperature (°C) 140 0 Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) 160 Holding Current (mA) Ambient Temperature (°C) 160 Apr.05.2005, page 5 of 7 102 7 5 4 Distribution 3 2 Typical Example 101 7 5 4 3 2 100 7 5 4 3 VD = 12V 2 RGK = 220Ω 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) 400 Typical Example IGT(25°C) IH(1kΩ) 350 14µA 1.7mA #1 48µA 2.7mA 300 # 2 Tj = 25°C 250 #1 200 #2 150 100 50 0 -2 10 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 Gate to Cathode Resistance (kΩ) Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Gate Trigger Current vs. Gate Current Pulse Width 104 7 5 3 2 Typical Example IGT(DC) # 1 11µA # 2 61µA #1 #2 103 7 5 3 2 102 7 5 V = 6V 3 D R = 60Ω 2 L Ta = 25°C 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Rev.2.00, Apr.05.2005, page 6 of 7 × 100 (%) Holding Current vs. Gate to Cathode Resistance Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Holding Current (RGK = rΩ) Holding Current (RGK = 220Ω) × 100 (%) CR5AS-12 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) CR5AS-12 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-D DPAK(L)-(3)/DPAK(L)-(3)V 0.36g Unit: mm 6.5 ± 0.5 2.3 ± 0.2 5.4 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 (1.3) 1.15 ± 0.1 0.8 ± 0.1 0.6 ± 0.1 0.6 ± 0.1 4.7 ± 0.5 6.9 ± 0.5 5.5 ± 0.5 8.2 ± 0.6 0.55 ± 0.1 0.55 ± 0.1 0.55 ± 0.1 2.29 0.55 ± 0.1 2.29 Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name – A1 Note : Please confirm the specification about the shipping in detail. Rev.2.00, Apr.05.2005, page 7 of 7 Standard order code example CR5AS-12-A1 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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