AP9960GM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 D2 ▼ Fast Switching Speed D1 D1 40V RDS(ON) 20mΩ ID ▼ Surface Mount Package G2 ▼ RoHS Compliant & Halogen-Free BVDSS 7.8A S2 SO-8 S1 G1 Description AP9960 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D2 D1 G2 G1 S1 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ 3 Drain Current, VGS @ 10V 3 Drain Current, VGS @ 10V 1 Rating Units 40 V + 20 V 7.8 A 6.2 A IDM Pulsed Drain Current 20 A PD@TA=25℃ Total Power Dissipation 2 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 62.5 ℃/W 1 201501093 AP9960GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 40 - - V - 0.032 - V/℃ VGS=10V, ID=7A - - 20 mΩ VGS=4.5V, ID=5A - - 32 mΩ BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS=0V, ID=250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=7A - 25 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=32V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=7A - 14.7 - nC Qgs Gate-Source Charge VDS=20V - 7.1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6.8 - nC td(on) Turn-on Delay Time VDS=20V - 11.5 - ns tr Rise Time ID=1A - 6.3 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 28.2 - ns tf Fall Time RD=20Ω - 12.6 - ns Ciss Input Capacitance VGS=0V - 1725 - pF Coss Output Capacitance VDS=25V - 235 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 145 - pF Min. Typ. VD=VG=0V , VS=1.3V - - 1.54 A Tj=25℃, IS=2.3A, VGS=0V - - 1.3 V o Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Forward On Voltage 2 Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9960GM-HF 36 32 10V 6.0V 5.0V 4.5V o T A =25 C 10V 6.0V 5.0V 4.5V T A =150 o C ID , Drain Current (A) ID , Drain Current (A) 24 24 V GS =4.0V 12 V GS =4.0V 16 8 0 0 0 1 2 3 0 4 V DS , Drain-to-Source Voltage (V) 1 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2 80 I D =7.0A T A =25 ℃ I D =7.0A V GS =10V Normalized R DS(ON) RDS(ON) (mΩ ) 60 40 1.4 0.8 20 0 0.2 2 4 6 8 10 V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 12 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 AP9960GM-HF 10 2.4 ID , Drain Current (A) 8 1.6 PD (W) 6 4 0.8 2 0 0 25 50 75 100 125 150 0 50 T c , Case Temperature ( o C) 100 150 T A , Ambient Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 100 10 ID (A) 1ms 10ms 1 100ms 1s 0.1 10s 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 T Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W T A =25 o C Single Pulse DC 0.01 0.1 Normalized Thermal Response (R thja) Duty Factor = 0.5 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 4 AP9960GM-HF f=1.0MHz 12 10000 VGS , Gate to Source Voltage (V) I D =7.0A Ciss 9 V DS =12V V DS =16V V DS =20V C (pF) 1000 6 Coss Crss 100 3 0 10 0 5 10 15 20 25 1 7 13 19 25 31 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 3.5 100 3 10 2.5 Tj=25 o C VGS(th) (V) IS(A) Tj=150 o C 1 2 1.5 0.1 1 0.5 0.01 0 0.4 0.8 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 5 AP9960GM-HF VDS 90% RD VDS D RG TO THE OSCILLOSCOPE 0.5 x RATED VDS G + 10% VGS S 10 v VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS D 4.5V 0.5 x RATED VDS G S QG TO THE OSCILLOSCOPE QGS QGD VGS + 1~ 3 mA IG I D Charge Fig 15. Gate Charge Circuit Q Fig 16. Gate Charge Waveform 6 AP9960GM-HF MARKING INFORMATION Part Number 9960GM YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 7