PHILIPS BFG197 Npn 7 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG197; BFG197/X; BFG197/XR
NPN 7 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
1995 Sep 13
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
FEATURES
PINNING
• High power gain
PIN
• Low noise figure
DESCRIPTION
BFG197 (Fig.1) Code: V5
• Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFG197 is a silicon NPN
transistor in a 4-pin, dual-emitter
plastic SOT143 envelope. It is
primarily intended for wideband
applications in the GHz range, such
as satellite TV systems and repeater
amplifiers in fibre-optic systems.
1
collector
2
base
3
emitter
4
emitter
handbook, 2 columns
4
1
BFG197/X (Fig.1) Code: V13
1
collector
2
emitter
3
base
4
emitter
3
2
Top view
MSB014
Fig.1 SOT143.
BFG197A/XR (Fig.2) Code: V35
1
collector
2
emitter
3
base
4
emitter
handbook, 2 columns
3
4
2
1
Top view
MSB035
Fig.2 SOT143XR.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
10
V
IC
collector current
DC value
−
−
100
mA
Ptot
total power dissipation
up to Ts = 75 °C; note 1
−
−
350
mW
Cre
feedback capacitance
IC = ic = 0; VCB = 8 V; f = 1 MHz
−
0.85
−
pF
fT
transition frequency
IC = 50 mA; VCE = 4 V; f = 2 GHz
−
7.5
−
GHz
GUM
maximum unilateral
power gain
IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
16
−
dB
IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
10
−
dB
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
−
1.7
−
dB
F
noise figure
Note
1. TS is the temperature at the soldering point of the collector tab.
1995 Sep 13
2
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current
DC value, continuous
−
100
mA
Ptot
total power dissipation
up to Ts = 75 °C; note 1
−
350
mW
Tstg
storage temperature range
−65
+150
°C
Tj
junction operating temperature
−
175
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
VALUE
UNIT
290
K/W
from junction to soldering point; note 1
Note
1. TS is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector leakage current
CONDITIONS
IE = 0; VCB = 5 V
MIN.
−
TYP.
−
MAX.
100
UNIT
nA
hFE
DC current gain
IC = 50 mA; VCE = 5 V
40
110
−
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
1.5
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
3.3
−
pF
Cre
feedback capacitance
IC = ic = 0; VCB = 8 V; f = 1 MHz
−
0.85
−
pF
fT
transition frequency
IC = 50 mA; VCE = 4 V; f = 2 GHz
−
7.5
−
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
16
−
dB
IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
10
−
dB
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
−
1.7
−
dB
Γs = Γopt; IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
2.3
−
dB
VCE = 6 V;Vo = 50 dBmV;
−
−51
−
dB
F
d2
noise figure
second order intermodulation
distortion
Note
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
1995 Sep 13
3
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
MBC983 - 2
MBB267
160
800
handbook,
halfpage
handbook, halfpage
Ptot
(mW)
h FE
600
120
400
80
200
40
0
0
50
100
150
0
200
40
80
120
I C (mA)
Ts ( o C)
VCE = 5 V.
Fig.4
Fig.3 Power derating curve.
MCD155
handbook,1.2
halfpage
DC current gain as a function of collector
current.
MCD156
8
handbook, halfpage
fT
(GHz)
C re
(pF)
6
0.8
4
0.4
2
0
0
0
2
4
6
8
V
CB
10
(V)
0
1995 Sep 13
40
60
80
IC (mA)
VCE = 4 V; Tamb = 25 °C; f = 2 GHz.
IC = ic = 0; f = 1 MHz.
Fig.5
20
Fig.6
Feedback capacitance as a function of
collector-base voltage.
4
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
MCD157
handbook,20
halfpage
gain
(dB)
MCD158
50
handbook, halfpage
MSG
gain
(dB)
G max
15
40
G UM
G UM
MSG
30
10
G max
20
5
10
0
0
20
40
60
0
80
10
10
2
103
IC (mA)
VCE = 4 V; f = 1 GHz.
f (MHz)
10
4
VCE = 4 V; IC = 50 mA.
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of frequency.
MCD159
50
MCD160
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
40
G UM
G UM
MSG
30
30
G max
20
MSG
20
10
G max
10
0
10
10
2
103
10
0
10
4
f (MHz)
VCE = 6 V; IC = 50 mA.
2
103
f (MHz)
10
VCE = 8 V; IC = 30 mA.
Fig.9 Gain as a function of frequency.
1995 Sep 13
10
Fig.10 Gain as a function of frequency.
5
4
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
MCD161
4
MCD162
4
handbook, halfpage
handbook, halfpage
f = 2 GHz
F
(dB)
F
(dB)
3
3
1 GHz
2
2
I C = 50 mA
500 MHz
20 mA
1
0
1
1
10
10 mA
0
10 2
100
IC (mA)
VCE = 6 V.
103
f (MHz)
VCE = 6 V.
Fig.11 Minimum noise figure as a function of
collector current.
Fig.12 Minimum noise figure as a function of
frequency.
MBB266
MBB268
45
35
handbook, halfpage
handbook, halfpage
d im
d2
(dB)
(dB)
50
40
55
45
60
50
65
55
70
20
40
60
80
60
20
100
120
I C (mA)
VCE = 8 V ; Vo = 700 mV; f(p+q−r) = 793.25 MHz; Tamb = 25 °C.
40
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 50 mV; f(p+q−r) = 810 MHz; Tamb = 25 °C.
Fig.13 Intermodulation distortion, typical values.
1995 Sep 13
10 4
Fig.14 Second order intermodulation distortion,
typical values.
6
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
1
handbook, full pagewidth
0.5
2
MSG
23 dB
4 dB
unstable
region
3 dB
0.2
5
2 dB
+
j
10
OPT
F min
0
0.2
*
= 1.7 dB
0.5
1
2
5
∞
10
–
j
stability
circle
10
5
0.2
2
0.5
1
MCD163
Zo = 50 Ω.
Maximum stable gain = 23 dB.
Fig.15 Noise circle figure.
1
handbook, full pagewidth
0.5
2
5 dB
4 dB
0.2
5
3 dB
10
OPT
+j
* = 2.4 dB
F min
0
*
–j
0.2
0.5
1
2
5
∞
10
10
15 dB
G max
15.8 dB
0.2
14 dB
5
2
0.5
1
Zo = 50 Ω.
Fig.16 Noise circle figure.
1995 Sep 13
7
MCD164
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
1
handbook, full pagewidth
0.5
2
0.2
5
6 dB
5 dB
10
+j
0.2
0
4 dB
0.5
1
2
5
10
∞
OPT
–j
*
10
8 dB
F min = 3.5 dB
0.2
G max
9.7 dB
*
9 dB
5
2
0.5
1
MCD165
Zo = 50 Ω.
Fig.17 Noise circle figure.
1
handbook, full pagewidth
0.5
2
3 GHz
0.2
5
10
+
j
0
0.2
0.5
1
2
5
10
∞
–
j
10
5
0.2
40 MHz
2
0.5
1
MCD166
VCE = 6 V; IC = 50 mA.
Fig.18 Common emitter input reflection coefficient (S11).
1995 Sep 13
8
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
100
80
60
40
20
0o
3 GHz
_ 45 o
_ 135 o
_ 90 o
VCE = 6 V; IC = 50 mA.
MCD167
Fig.19 Common emitter forward transmission coefficient (S21).
90 o
handbook, full pagewidth
135 o
180 o
0.20
0.16
3 GHz
0.12
0.08
0.04
45 o
0o
40 MHz
_ 45 o
_ 135 o
MCD169
VCE = 6 V; IC = 50 mA.
_ 90 o
Fig.20 Common emitter reverse transmission coefficient (S12).
1995 Sep 13
9
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
1
handbook, full pagewidth
0.5
2
0.2
5
10
+
j
0
0.2
0.5
1
2
5
10
∞
3 GHz
–
j
10
5
0.2
40 MHz
2
0.5
1
MCD168
VCE = 6 V; IC = 50 mA.
Fig.21 Common emitter output reflection coefficient (S22).
1995 Sep 13
10
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
SPICE parameters for BFQ195 crystal
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19 (note 1)
20 (note 1)
21 (note 1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35 (note 1)
36 (note 1)
37 (note 1)
38
PARAMETER
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
VALUE
1.972
150.0
990.8
54.72
30.00
47.82
1.580
165.4
993.9
2.351
9.967
3.510
1.124
5.000
1.000
5.000
368.1
937.2
0.000
1.110
3.000
3.388
600.0
302.9
11.06
30.02
1.649
401.9
0.000
1.190
160.1
89.44
130.0
2.148
0.000
750.0
0.000
785.9
UNIT
fA
−
m
V
A
fA
−
−
m
V
A
aA
−
Ω
µA
Ω
mΩ
mΩ
−
EV
−
pF
mV
m
ps
−
V
mA
deg
pF
mV
m
m
ns
F
mV
−
m
L1
LB
B
L2
B'
C'
C
E'
C be
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50.
QLB,E (f) = QLB,E √ (f/Fc).
Fc = scaling frequency = 1000 MHz.
Fig.22 Package equivalent circuit SOT143;
SOT143R.
List of components (see Fig.22)
DESIGNATION
Note
1. These parameters have not been extracted,
the default values are shown.
1995 Sep 13
C cb
handbook, halfpage
11
VALUE
UNIT
Cbe
84
fF
Ccb
17
fF
Cce
191
fF
L1
0.12
nH
L2
0.21
nH
L3
0.06
nH
LB
0.95
nH
LE
0.40
nH
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
PACKAGE OUTLINES
handbook, full pagewidth
3.0
2.8
0.150
0.090
0.75
0.60
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
2.5
max
1.4
1.2
o
10
max
1
1.1
max
o
30
max
2
0
0.1
0.88
0.48
0
0.1
0.1 M A B
MBC845
1.7
TOP VIEW
Dimensions in mm.
Fig.23 SOT143.
3.0
2.8
handbook, full pagewidth
0.150
0.090
0.40
0.25
B
1.9
3
4
0.1
max
o
10
max
0.2 M A
A
1.4
1.2
o
2.5
max
10
max
2
1.1
max
o
30
max
1
0.48
0.38
0.88
0.78
1.7
0.1 M B
TOP VIEW
Dimensions in mm.
Fig.24 SOT143R.
1995 Sep 13
12
MBC844
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 13
13