AP3P3R0MT
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Simple Drive Requirement
D
▼ Ultra Low On-resistance
BVDSS
RDS(ON)
ID4
-30V
3mΩ
-125A
G
▼ RoHS Compliant & Halogen-Free
S
D
Description
D
AP3P3R0 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
®
The PMPAK 5x6 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
D
D
S
S
S
G
®
PMPAK 5x6
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
.
Parameter
Symbol
Drain Current (Chip), VGS @ 10V
4
4
Drain Current, VGS @ 10V (Package Limited)
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
5
Rating
Units
-30
V
+20
V
-125
A
-60
A
-33.5
A
-26.8
A
-200
A
69.4
W
5
W
45
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
1.8
℃/W
25
℃/W
1
201602251
AP3P3R0MT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-20A
-
-
3
mΩ
VGS=-4.5V, ID=-10A
-
-
4.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-5V, ID=-20A
-
67
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-20A
-
76
122
nC
Qgs
Gate-Source Charge
VDS=-15V
-
24
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
26
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
19
-
ns
tr
Rise Time
ID=-1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
160
-
ns
tf
Fall Time
VGS=-10V
-
74
-
ns
Ciss
Input Capacitance
VGS=0V
-
9400 15040
pF
Coss
Output Capacitance
VDS=-15V
Crss
Rg
-
1230
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
680
-
pF
Gate Resistance
f=1.0MHz
-
3
6
Ω
Min.
Typ.
IS=-20A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-20A, VGS=0V,
-
36
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec
4.Package limitation current is 60A .
o
5.Starting Tj=25 C , VDD=-30V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3P3R0MT
160
320
-10V
-8.0V
-7.0V
-6.0V
-5.0V
V G = -4.0V
240
T C = 150 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
T C =25 o C
160
120
-10V
-8.0V
-7.0V
-6.0V
-5.0V
V G = -4.0V
80
40
80
0
0
0
2
4
6
8
0
10
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
4.8
2.0
I D = -20A
V G = -10V
I D = -10 A
o
T C =25 C
4.4
RDS(ON) (mΩ)
4
3.6
.
3.2
Normalized RDS(ON)
1.6
1.2
0.8
0.4
2.8
2.4
0.0
2
4
6
8
10
-100
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
2.0
I D = -250uA
Normalized VGS(th)
1.6
-IS(A)
10
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
2.01E+09
0.0
0.1
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3P3R0MT
f=1.0MHz
16000
8
12000
6
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -20 A
V DS = -15V
C iss
4
8000
2
4000
C oss
C rss
0
0
0
40
80
120
1
160
5
9
Q G , Total Gate Charge (nC)
17
21
25
29
33
37
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
100us
.
10
1
o
T C =25 C
Single Pulse
1ms
10ms
DC
Normalized Thermal Response (Rthjc)
1000
-ID (A)
13
0.1
1
10
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.01
0.1
0.01
Duty factor=0.5
0.00001
100
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
160
V DS =-5V
T j =150 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
o
T j =25 C
120
80
120
80
Limited by package
40
40
2011082301
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
o
T C , Case Temperature ( C )
Fig 12. Drain Current v.s. Case Temperature
4
AP3P3R0MT
2
100
I D = -1mA
80
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
0.4
60
40
20
0
0
-100
-50
T
0
j
50
100
150
0
, Junction Temperature ( o C)
50
100
150
o
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
10
T j =25 o C
RDS(ON) (mΩ)
8
6
.
-4.5V
4
V GS = -10V
2
0
20
40
60
80
100
120
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP3P3R0MT
MARKING INFORMATION
Part Number
3P3R0
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
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