Vishay BAV20W-V-GS08 Small signal switching diodes, high voltage Datasheet

BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diodes
• For general purpose
e3
• These diodes are also available in other
case styles including: the DO-35 case
with the type designations BAV19 to BAV21, the
MiniMELF case with the type designations
BAV100 to BAV103, the SOT-23 case with the
type designations BAS19 to BAS21, and the
SOD-323 case with type designations BAV19WSV to BAV21WS-V.
• Lead (Pb)-free component
17431
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Type differentiation
Ordering code
Marking
Remarks
BAV19W-V
VR = 100 V
BAV19W-V-GS18 or BAV19W-V-GS08
A8
Tape and Reel
BAV20W-V
VR = 150 V
BAV20W-V-GS18 or BAV20W-V-GS08
A9
Tape and Reel
BAV21W-V
VR = 200 V
BAV21W-V-GS18 or BAV21W-V-GS08
AA
Tape and Reel
Document Number 85725
Rev. 1.2, 22-Jul-05
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1
BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Repetitive peak voltage
Part
Symbol
Value
Unit
BAV19W-V
VR
100
V
BAV20W-V
VR
150
V
BAV21W-V
VR
200
V
BAV19W-V
VRRM
120
V
BAV20W-V
VRRM
200
V
BAV21W-V
VRRM
250
V
DC Forward current
Tamb = 25 °C
IF
250
1)
Rectified current (average) half
wave rectification with resist.
load
Tamb = 25 °C
IF(AV)
200
1)
mA
Repetitive peak forward current
f ≥ 50 Hz, θ = 180 °,
Tamb = 25 °C
IFRM
6251)
mA
Surge forward current
t < 1 s, Tj = 25 °C
IFSM
1
A
Power dissipation
Tamb = 25 °C
Ptot
410
mA
mW
1)
1) Valid provided that leads are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
3751)
°C/W
Junction temperature
Tj
1501)
°C
Storage temperature range
TS
Thermal resistance junction to
ambient air
- 65 to +
°C
1501)
1) Valid provided that leads are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Max
Unit
IF = 100 mA
Test condition
VF
1.00
V
IF = 200 mA
VF
1.25
V
Min
Typ.
VR = 100 V
BAV19W-V
IR
100
nA
BAV19W-V
IR
15
µA
VR = 150 V
BAV20W-V
IR
100
nA
VR = 150 V, Tj = 100 °C
BAV20W-V
IR
15
µA
VR = 200 V
BAV21W-V
IR
100
nA
VR = 200 V, Tj = 100 °C
BAV21W-V
IR
15
µA
IF = 10 mA
Diode capacitance
VR = 0, f = 1 MHz
Reverse recovery time
IF = 30 mA, IR = 30 mA,
Irr = 3 mA, RL = 100 Ω
2
Symbol
VR = 100 V, Tj = 100 °C
Dynamic forward resistance
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Part
rf
5
Ω
Ctot
1.5
pF
trr
50
ns
Document Number 85725
Rev. 1.2, 22-Jul-05
BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
T j = 100 ° C
100
25 ° C
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
DC current I F
Current (rectif.) I O
0.1
0
30
60
90
120
18862
500
100
10
Reverse Voltage
BAV100 V R = 50 V
BAV101 V R = 100 V
BAV102 V R = 150 V
BAV103 V R = 200 V
1
0.1
0 20 40 60 80 100 120 140 160 180 200
Tj - Junction Temperature ( ° C )
2.0
T j = 25 ° C
1.8
400
1.6
300
200
100
20 40 60 80 100 120 140 160 180 200
18860
Tamb - Ambient Temperature ( °C )
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85725
Rev. 1.2, 22-Jul-05
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
0
0
100
Figure 5. Leakage Current vs. Junction Temperature
Ctot - Capacitance ( pF )
Ptot - Admissible Power Dissipation ( W )
Figure 2. Admissible Forward Current vs. Ambient Temperature
10
IF - Forward Current ( mA )
1000
150
Tamb - Ambient Temperature ( °C )
18859
1
Figure 4. Dynamic Forward Resistance vs. Forward Current
I R ( Tj ) / I R ( 25 ° C ) - Leakage Current
I O , I F - Admissible Forward Current ( A )
0.3
0
1
18861
Figure 1. Forward Current vs. Forward Voltage
0.2
10
1
VF - Forward Voltage ( V )
18858
100
rf - Dynamic Forward Resistance ( Ω )
I F - Forward Current ( mA )
1000
18863
1
10
100
VR - Reverse Voltage ( V )
Figure 6. Capacitance vs. Reverse Voltage
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3
BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors
Package Dimensions in mm (Inches)
1.35 (0.053) max.
0.25 (0.010) min.
0.1 (0.004) max.
0.55 (0.022)
0.15 (0.006) max.
Mounting Pad Layout
Cathode Band
2.40 (0.094)
2.55 (0.100)
2.85 (0.112)
3.55 (0.140)
3.85 (0.152)
ISO Method E
1.40 (0.055)
1.70 (0.067)
0.72 (0.028)
17432
1.40 (0.055)
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Document Number 85725
Rev. 1.2, 22-Jul-05
BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85725
Rev. 1.2, 22-Jul-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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