MC78LC00 Series Micropower Voltage Regulator • • • • • • • • Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V Low Output Voltage Option High Accuracy Output Voltage of 2.5% Industrial Temperature Range of −40°C to 85°C Two Surface Mount Packages (SOT−89, 3 Pin, or SOT−23, 5 Pin) These are Pb−Free Devices MARKING DIAGRAMS AND PIN CONNECTIONS 5 1 TSOP−5 NTR SUFFIX CASE 483 GND 1 Vin 2 Vout 3 5 N/C G Features www.onsemi.com XXX AYW G The MC78LC00 series of fixed output low dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. The MC78LC00 series features an ultra−low quiescent current of 1.1 mA. Each device contains a voltage reference unit, an error amplifier, a PMOS power transistor, and resistors for setting output voltage. The MC78LC00 has been designed to be used with low cost ceramic capacitors and requires a minimum output capacitor of 0.1 mF. The device is housed in the micro−miniature Thin SOT23−5 surface mount package and SOT−89, 3 pin. Standard voltage versions are 1.5, 1.8, 2.5, 2.7, 2.8, 3.0, 3.3, 4.0, and 5.0 V. Other voltages are available in 100 mV steps. 4 N/C (Top View) XXX= Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) TAB GND 1 Typical Applications 1 • Battery Powered Instruments • Hand−Held Instruments • Camcorders and Cameras SOT−89 H SUFFIX CASE 1213 Vin 2 XX DD Tab Vout 3 (Top View) (Tab is connected to Pin 2) XX = Specific Device Code DD = Date Code 2 3 Vin VO ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. Vref 1 GND This device contains 8 active transistors. Figure 1. Representative Block Diagram © Semiconductor Components Industries, LLC, 2016 August, 2016 − Rev. 11 1 Publication Order Number: MC78LC00/D MC78LC00 Series ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ PIN FUNCTION DESCRIPTION Pin No. Pin Name 1 GND Description 2 Vin Positive power supply input voltage 3 Vout Regulated Output 4 N/C No Internal Connection 5 N/C No Internal Connection Power supply ground MAXIMUM RATINGS ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Symbol Value Unit Input Voltage Rating Vin 12 V Output Voltage Vout −0.3 to Vin +0.3 V Power Dissipation and Thermal Characteristics Case 483−01 (Thin SOT23−5) NTR Suffix Power Dissipation @ TA = 85°C Thermal Resistance, Junction−to−Ambient Case 1213 (SOT−89) H Suffix Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 140 280 mW °C/W PD RqJA 900 111 mW °C/W Operating Junction Temperature TJ +125 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Tsolder 10 sec ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Lead Soldering Temperature @ 260°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2 MC78LC00 Series ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless otherwise noted.) (Note 5) NTR SUFFIX Symbol Characteristic Output Voltage (TA = 25°C, Iout = 1.0 mA) 1.5 V 1.8 V 2.5 V 2.7 V 2.8 V 3.0 V 3.3 V 4.0 V 5.0 V Vout Output Voltage (TA = −40°C to 85°C) 1.5 V 1.8 V 2.5 V 2.7 V 2.8 V 3.0 V 3.3 V 4.0 V 5.0 V Vout Min Typ Max 1.455 1.746 2.425 2.646 2.744 2.94 3.234 3.9 4.90 1.5 1.8 2.5 2.7 2.8 3.0 3.3 4.0 5.0 1.545 1.854 2.575 2.754 2.856 3.06 3.366 4.1 5.10 1.455 1.746 2.425 2.619 2.716 2.910 3.201 3.9 4.90 1.5 1.8 2.5 2.7 2.8 3.0 3.3 4.0 5.0 1.545 1.854 2.575 2.781 2.884 3.09 3.399 4.1 5.10 Unit V V Line Regulation (Vin = VO(nom.) + 1.0 V to 12 V, Iout = 1.0 mA) Regline − 0.05 0.2 %/V Load Regulation (Iout = 1.0 mA to 10 mA) Regload − 40 60 mV Output Current (Note 6) 1.5 V, 1.8 V (Vin = 4.0 V) 2.5 V, 2.7 V, 2.8 V, 3.0 V (Vin = 5.0 V) 3.3 V (Vin = 6.0 V) 4.0 V (Vin = 7.0 V) 5.0 V (Vin = 8.0 V) Iout 35 50 50 80 80 50 80 80 80 100 − − − − − − − − − 35 30 30 30 70 60 53 38 Dropout Voltage (Iout = 1.0 mA, Measured at Vout −3.0%) 1.5 V 1.6 V−3.2 V 3.3 V−3.9 V 4.0 V−5.0 V mA mV Vin−Vout Quiescent Current (Iout = 1.0 mA to IO(nom.)) IQ − 1.1 3.6 mA Output Voltage Temperature Coefficient Tc − "100 − ppm/°C Output Noise Voltage (f = 1.0 kHz to 100 kHz) Vn − 89 − mVrms 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883, Method 3015 Machine Model Method 200 V 2. Latch up capability (85°C) "100 mA 3. Maximum package power dissipation limits must be observed. TJ(max) * TA PD + RqJA 4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible. 6. Output Current is measured when Vout = VO1 − 3% where VO1 = Vout at Iout = 0 mA. www.onsemi.com 3 MC78LC00 Series ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless otherwise noted.) (Note 11) HT SUFFIX Symbol Characteristic Output Voltage 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 5.0 V) 40HT1 Suffix (Vin = 6.0 V) 50HT1 Suffix (Vin = 7.0 V) Min Typ Max 2.950 3.218 3.900 4.875 3.0 3.3 4.0 5.0 3.075 3.382 4.100 5.125 − 0.05 0.2 − − − − 40 40 50 60 60 60 70 90 35 35 45 55 50 50 65 80 − − − − − − − − 40 35 25 25 60 53 38 38 − − − − 1.1 1.1 1.2 1.3 3.3 3.3 3.6 3.9 − ±100 − Unit V ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Line Regulation Vin = [VO + 1.0] V to 10 V, IO = 1.0 mA Regline Load Regulation (IO = 1.0 to 10 mA) 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 6.0 V) 40HT1 Suffix (Vin = 7.0 V) 50HT1 Suffix (Vin = 8.0 V) Regload Output Current (Note 12) 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 6.0 V) 40HT1 Suffix (Vin = 7.0 V) 50HT1 Suffix (Vin = 8.0 V) IO Dropout Voltage 30HT1 Suffix (IO = 1.0 mA) 33HT1 Suffix (IO = 1.0 mA) 40HT1 Suffix (IO = 1.0 mA) 50HT1 Suffix (IO = 1.0 mA) Vin − VO Quiescent Current 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 5.0 V) 40HT1 Suffix (Vin = 6.0 V) 50HT1 Suffix (Vin = 7.0 V) ICC Output Voltage Temperature Coefficient TC %/V mV mA mV mA ppm/°C 7. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883, Method 3015 Machine Model Method 200 V 8. Latch up capability (85°C) "100 mA 9. Maximum package power dissipation limits must be observed. TJ(max) * TA PD + RqJA 10. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible. 12. Output Current is measured when Vout = VO1 − 3% where VO1 = Vout at Iout = 0 mA. DEFINITIONS Load Regulation difference between the input current (measured through the LDO input pin) and the output current. The change in output voltage for a change in output current at a constant temperature. Line Regulation Dropout Voltage The change in output voltage for a change in input voltage. The measurement is made under conditions of low dissipation or by using pulse technique such that the average chip temperature is not significantly affected. The input/output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 3% below its nominal. The junction temperature, load current, and minimum input supply requirements affect the dropout level. Line Transient Response Typical over and undershoot response when input voltage is excited with a given slope. Maximum Power Dissipation The maximum total dissipation for which the regulator will operate within its specifications. Maximum Package Power Dissipation The maximum power package dissipation is the power dissipation level at which the junction temperature reaches its maximum operating value, i.e. 125°C. Depending on the ambient power dissipation and thus the maximum available output current. Quiescent Current The quiescent current is the current which flows through the ground when the LDO operates without a load on its output: internal IC operation, bias, etc. When the LDO becomes loaded, this term is called the Ground current. It is actually the www.onsemi.com 4 MC78LC00 Series 3.2 3.2 VO, OUTPUT VOLTAGE (V) VO, OUTPUT VOLTAGE (V) 3.1 3 IO = 1 mA 2.9 IO = 10 mA 2.8 2.7 2.6 IO = 5 mA 2.5 2.4 2.2 2.5 2.8 IO = 5.0 mA 2.6 2.4 MC78LC30HT1 IO = 10 mA 2.7 2.9 3.1 3.3 2.2 2.5 3.5 Vin, Input Voltage (V) 2.9 3.1 Vin, Input Voltage (V) Figure 2. Output Voltage versus Input Voltage Figure 3. Output Voltage versus Input Voltage 2.7 3.3 3.5 3.2 3.05 NTR Series 3 −40°C VO, OUTPUT VOLTAGE (V) VO, OUTPUT VOLTAGE (V) IO = 1.0 mA 3.0 TA = 25°C 2.3 2.95 80°C 2.9 2.85 2.8 2.75 25°C 2.7 2.65 3.1 TA = −30°C 3.0 2.9 0 20 40 60 80 100 TA = 25°C 2.8 MC78LC30HT1 2.7 2.6 0 0 120 20 TA = 80°C 100 120 IO, Output Current (mA) 40 60 80 IO, Output Current (mA) Figure 4. Output Voltage versus Output Current Figure 5. Output Voltage versus Output Current 2 2.0 Vin −VO, DROPOUT VOLTAGE (V) Vin −VO, DROPOUT VOLTAGE (V) TA = 25°C NTR Series MC78LC30NTR TA = 25°C 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 10 20 30 40 1.6 1.2 0.8 0 0 50 MC78LC30HT1 TA = 25°C 0.4 IO, Output Current (mA) 10 20 30 40 50 IO, Output Current (mA) Figure 6. Dropout Voltage versus Output Current Figure 7. Dropout Voltage versus Output Current www.onsemi.com 5 MC78LC00 Series 3.10 MC78LC30NTR Vin = 4.0 V IO = 10 mA 3.06 VO, OUTPUT VOLTAGE (V) VO, OUTPUT VOLTAGE (V) 3.1 3.02 2.98 2.94 2.9 −40 −20 0 20 40 60 3.06 3.02 2.98 MC78LC30HT1 2.94 2.90 −40 80 −20 20 40 60 80 TA, Ambient Temperature (°C) Figure 8. Output Voltage versus Temperature Figure 9. Output Voltage versus Temperature 1.4 1.3 IQ, QUIESCENT CURRENT (mA) MC78LC30NTR TA = 25°C IO = 0 mA 1.2 1.1 1 0.9 0.8 3 4 5 6 7 8 9 10 11 TA = 25°C 1.3 1.2 1.1 1.0 MC78LC30HT1 0.9 0.8 3.0 12 4.0 Vin, Input Voltage (V) 7.0 8.0 9.0 10 1.2 IQ, QUIESCENT CURRENT (mA) MC78LC30NTR Vin = 4.0 V IO = 0 mA 1.25 1 0.75 0.5 −20 6.0 Figure 11. Quiescent Current versus Input Voltage 1.75 1.5 5.0 Vin, Input Voltage (V) Figure 10. Quiescent Current versus Input Voltage IQ, QUIESCENT CURRENT (mA) 0 TA, Ambient Temperature (°C) 1.4 IQ, QUIESCENT CURRENT (mA) Vin = 5.0 V IO = 10 mA 0 20 40 60 Vin = 5.0 V 1.1 1.0 0.9 0.8 MC78LC30HT1 0.7 0.6 −40 80 −20 0 20 40 60 80 TA, Ambient Temperature (°C) TA, Ambient Temperature (°C) Figure 12. Quiescent Current versus Temperature Figure 13. Quiescent Current versus Temperature www.onsemi.com 6 MC78LC00 Series 0.8 Vin − Vout, DROPOUT VOLTAGE (V) Vin − Vout, DROPOUT VOLTAGE (V) 0.8 NTR Series 0.7 HT1 Series 0.7 0.6 IO = 10 mA 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0.0 1.0 2.0 4.0 3.0 5.0 IO = 1.0 mA 0 0 6.0 1.0 2.0 VO, Set Output Voltage (V) Output Voltage Deviation (mV) INPUT VOLTAGE/OUTPUT VOLTAGE (V) Input Voltage (V) 6.0 NTR Series 5.0 4.0 300 Vin = 4.5 V to 5.5 V Vout = 3.0 V RL = 3 k Cout = 0.1 mF 100 0 −100 −200 −300 0 0.5 1.0 1.5 2.0 2.5 6.0 8.0 7.5 Input Voltage 7.0 6.5 6.0 HT1 Series 5.5 Output Voltage 5.0 CO = 0.1 mF IO = 1.0 mA 4.5 4.0 0 2.0 4.0 6.0 t, Time (ms) Figure 16. Line Transient Figure 17. Line Transient Response 1.5 TA = 25°C 3.0 NTR Series Ig GROUND CURRENT (mA) Vout, OUTPUT VOLTAGE (V) 5.0 Time (mS) 3.5 2.5 2.0 1.5 IO = 50 mA 1.0 100 mA 0.5 0 4.0 Figure 15. Dropout Voltage versus Set Output Voltage Figure 14. Dropout Voltage versus Set Output Voltage 200 3.0 VO, Set Output Voltage (V) TA = 25°C IO = 0 mA 1.0 NTR Series 50 mA 0.8 200 mA 0.6 100 mA 50 mA 0.4 200 mA 0.2 200 mA 0 0.5 1.0 1.5 2.0 0 2.5 0 Vin, Input Voltage (V) 0.5 1.0 1.5 2.0 2.5 Vin, Input Voltage (V) Figure 18. Output Voltage versus Input Voltage Figure 19. Ground Current versus Input Voltage www.onsemi.com 7 MC78LC00 Series APPLICATIONS INFORMATION Thermal A typical application circuit for the MC78LC00 series is shown in Figure 20. As power across the MC78LC00 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and also the ambient temperature effect the rate of temperature rise for the part. This is stating that when the MC78LC00 has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power dissipation applications. The maximum dissipation the package can handle is given by: Input Decoupling (C1) A 0.1 mF capacitor either ceramic or tantalum is recommended and should be connected close to the MC78LC00 package. Higher values and lower ESR will improve the overall line transient response. Output Decoupling (C2) The MC78LC00 is a stable component and does not require any specific Equivalent Series Resistance (ESR) or a minimum output current. Capacitors exhibiting ESRs ranging from a few mW up to 3.0 W can thus safely be used. The minimum decoupling value is 0.1 mF and can be augmented to fulfill stringent load transient requirements. The regulator accepts ceramic chip capacitors as well as tantalum devices. Larger values improve noise rejection and load regulation transient response. PD + If junction temperature is not allowed above the maximum 125°C, then the MC78LC00NTR can dissipate up to 357 mW @ 25°C. The power dissipated by the MC78LC00NTR can be calculated from the following equation: Hints Please be sure the Vin and GND lines are sufficiently wide. When the impedance of these lines is high, there is a chance to pick up noise or cause the regulator to malfunction. Set external components, especially the output capacitor, as close as possible to the circuit, and make leads as short as possible. Battery or Unregulated Voltage TJ(max) * TA RqJA Ptot + ƪVin * Ignd (Iout)ƫ ) [Vin * Vout] * Iout or P ) Vout * Iout VinMAX + tot Ignd ) Iout If an 80 mA output current is needed then the ground current from the data sheet is 1.1 mA. For an MC78LC30NTR (3.0 V), the maximum input voltage will then be 7.4 V. + C1 Vout + C2 Figure 20. Basic Application Circuit for NTR Suffixes www.onsemi.com 8 MC78LC00 Series MJD32C 0.033 mF 2 100 Vin 2 Vin 3 3 VO MC78LC00 VO MC78LC00 R1 1 1 0.1 mF ICC C1 0.1 mF GND R2 GND GND Figure 21. Current Boost Circuit R2 Figure 22. Adjustable VO MJD32C Q1 0.033 mF Q2 Vin C2 MMBT2907 ALT1 2 3 VO MC78LC00 R1 1 0.1 mF 0.1 mF GND GND Figure 23. Current Boost Circuit with Overcurrent Limit Circuit V O + V O(Reg) ǒ1 ) R2 Ǔ ) ICC R2 R1 I www.onsemi.com 9 O(short circuit) [ V BE2 ) R2 V BE1 ) V R1 BE2 MC78LC00 Series ORDERING INFORMATION Nominal Output Voltage Marking MC78LC15NTRG 1.5 LAG MC78LC18NTRG 1.8 LAH MC78LC25NTRG 2.5 LAI MC78LC27NTRG 2.7 LAJ MC78LC28NTRG 2.8 LAK MC78LC30NTRG 3.0 LAL MC78LC33NTRG 3.3 LAM MC78LC40NTRG 4.0 LEC MC78LC50NTRG 5.0 LAN MC78LC30HT1G 3.0 0C MC78LC33HT1G 3.3 3C MC78LC40HT1G 4.0 0D MC78LC50HT1G 5.0 0E Device Package Shipping† Thin SOT23−5 (Pb−Free) 3000 Units/7″ Tape & Reel SOT−89 (Pb−Free) 1000 Units Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Additional voltages in 100 mV steps are available upon request by contacting your ON Semiconductor representative. www.onsemi.com 10 MC78LC00 Series PACKAGE DIMENSIONS TSOP−5 (SOT23−5) NTR SUFFIX CASE 483 ISSUE M NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 S 3 K B DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 MC78LC00 Series PACKAGE DIMENSIONS SOT−89 H SUFFIX CASE 1213−02 ISSUE C −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. 1213-01 OBSOLETE, NEW STANDARD 1213-02. C J F −B− L K D 0.10 E G M T B S A S −T− SEATING PLANE 2 PL 0.10 M T B S A S DIM A B C D E F G H J K L MILLIMETERS MIN MAX 4.40 4.60 2.40 2.60 1.40 1.60 0.37 0.57 0.32 0.52 1.50 1.83 1.50 BSC 3.00 BSC 0.30 0.50 0.80 ----4.25 INCHES MIN MAX 0.173 0.181 0.094 0.102 0.055 0.063 0.015 0.022 0.013 0.020 0.059 0.072 0.059 BSC 0.118 BSC 0.012 0.020 0.031 ----0.167 H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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