Diode Semiconductor Korea EDB101S --- EDB106S VOLTAGE RANGE: 50 --- 400 V CURRENT: 1.0 A SILICON BRIDGE RECTIFIERS FEATURES DB-S Rating to 400 V PRV Surge overload rating to 30 Amperes peak 1± 0.1 7.9± 0.2 0.3 Reliable low cost construction utilizing molded 6.4± 0.1 8.3± 0.3 6.3± 0.2 Ideal for printed circuit board 1.2± 0.3 10± 0.6 Lead solderable per MIL-STD-202 method 208 Lead: silver plated copper, solderde plated 8.3± 0.1 Plastic material has UL flammability classification 94V-O 2.5± 0.15 5± 0.2 Polarity symbols molded on body Weight: 1.0 grams Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EDB 101S EDB 102S EDB 103S EDB 104S EDB 105S EDB 106S UNITS Maximum recurrent peak reverse voltage VRRM 50 100 150 200 300 400 V Maximum RMS voltage VRMS 35 70 105 140 210 280 V Maximum DC blocking voltage V DC 50 100 150 200 300 400 V Maximum average forw ard Output current @TA =55 IF(AV) 1.0 A IFSM 30.0 A VF 1.0 V 10.0 μA 1.0 mA 50 nS Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 IR Maximum reverse recovery time (NOTE 1) trr Typical junction calacitance CJ (NOTE 2) Operating junction temperature range Storage temperature range 15 10 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 NOTE: 1. Test conditions: I F=0.5A, I R=-1.0A, I RR=-0.25A. 2. Measured at 1 MHz and applied rev erse v oltage of 4.0 v olts. pF www.diode.kr EDB101S --- EDB106S Diode Semiconductor Korea 50 N 1. 10 N 1. trr +0.5A D.U.T. (+) 25VDC (approx) (-) OSCILLOSCOPE (NOTE1) 1 NONINDUCTIVE 0 PULSE GENERATOR (NOTE2) -0.25A -1.0A 1cm NOTES:1.RISE TIME =7ns MAX. INPUT IMPEDANCE=1MΩ.22pF 2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5OΩ 10 TJ=100 1.0 TJ=25 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 60 0 0 25 50 75 100 125 150 ) 10 1 .0 0 .1 .0 1 TJ=125 P u lse W id th =300u S .0 0 1 0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 8.3ms Single Half Sine Wave TJ=25 40 30 20 10 1 5 10 50 NUMBER OF CYCLES AT 60Hz JUNCTION CAPACITANCE, (pF) 200 50 AMPERSE PEAK FORWARD SURGE CURRENT, 1 FIG.6 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0 Single phaes half wave 60Hz resistive or inductive load FIG.4 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, AMPERSE TJ=150 AMPERSE INSTANTANEOUS REVERSE CURRENT, 100 2 AMBIENT TEMPERATURE ( SET TIME BASE FOR 10 ns /cm FIG.3 -- TYPICAL REVERSE CHARACTERISTICS 0.1 FIG.2 -- TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, AMPERSE FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC TJ=25 100 60 40 20 EDB101S-EDB104S 10 6 EDB105S-EDB106S 4 2 1 .1 1 4 10 100 100 REVERSE VOLTAGE, VOLTS www.diode.kr