Diodes DMP3017SFK-7 P-channel enhancement mode mosfet Datasheet

DMP3017SFK
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
V(BR)DSS
RDS(on)max
-30V
14mΩ @ VGS = -10V
25mΩ @ VGS = -4.5V







ID
TA = +25°C
-10.4A
-7.8A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
Low On-Resistance
Low Input Capacitance
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
making it ideal for high efficiency power management applications.
Mechanical Data
Applications





Load Switch
Power Management Functions
DC-DC Converters
Case: U-DFN2523-6
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4



Weight: 0.008 grams (Approximate)
D
U-DFN2523-6
Pin 1
G
Pin 1, 2 = Source
Pin 3 = Gate
Pin 4, 5, 6 = Drain
Gate Protection
Diode
ESD PROTECTED
S
Equivalent Circuit
Bottom View
Ordering Information (Note 4)
Part Number
DMP3017SFK-7
DMP3017SFK-13
Notes:
Case
U-DFN2523-6
U-DFN2523-6
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN2523-6
P7
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
DMP3017SFK
Document number: DS37310 Rev. 4 - 2
Mar
3
P7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
YM
ADVANCE INFORMATION
NEW PRODUCT
Product Summary
2016
D
Apr
4
May
5
2017
E
Jun
6
2018
F
Jul
7
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Aug
8
2019
G
Sep
9
Oct
O
2020
H
Nov
N
Dec
D
May 2015
© Diodes Incorporated
DMP3017SFK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
ADVANCE INFORMATION
NEW PRODUCT
Drain-Source Voltage
VDSS
VGSS
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
Value
-30
Units
V
±25
V
ID
-10.4
-8.3
A
ID
-7.8
-6.2
A
IS
-3
A
IDM
-80
A
IAS
-14
A
EAS
104
mJ
Symbol
Value
1
Units
W
°C/W
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
PD
Thermal Resistance, Junction to Ambient (Note 5)
RJA
PD
123
Total Power Dissipation (Note 6)
2.2
W
Thermal Resistance, Junction to Ambient (Note 6)
RJA
55
°C/W
Total Power Dissipation (Note 6)
PD
17
W
RJC
7.2
°C/W
TJ, TSTG
-55 to +150
°C
TC = +25°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
-30
—
—
V
VGS = 0V, ID = -10mA
—
—
-1
—
—
-100
µA
VDS = -24V, VGS = 0V
—
—
±10
µA
VGS = ±25V, VDS = 0V
VGS(th)
-1
-2.5
14
VDS = VGS, ID = -250μA
RDS(ON)
-1.6
9.5
V
—
—
15
25
VSD
—
-0.7
-1.2
V
VGS = -4.5V, ID = -6.9A
VGS = 0V, IS = -1A
On State Drain Current (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
ID(ON)
-20
—
—
A
VDS ≦-5V, VGS = -10V
Ciss
—
2207
4414
Output Capacitance
Coss
—
390
780
pF
Reverse Transfer Capacitance
Gate Resistance
Crss
—
686
Rg
VDS = 0V, VGS = 0V, f = 1MHz
Qg
Qg
42.7
20
90
Ω
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
—
—
343
8.4
VDS = -15V, VGS = 0V,
f = 1MHz
nC
VDS = -15V, ID = -9.5A
ns
VDD = -15V, VGS = -10V,
RGEN = 6Ω, ID = -9.5A
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
IDSS
IGSS
—
21.6
45
Qgs
—
7.9
16
Gate-Drain Charge
Qgd
—
10
Turn-On Delay Time
Turn-On Rise Time
tD(on)
—
20
15
tr
tD(off)
—
—
7.35
16.4
Turn-Off Fall Time
tf
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Turn-Off Delay Time
Notes:
mΩ
67.2
30
110
—
—
37.5
60
18.6
35
ns
—
8.6
17.5
nC
Test Condition
VGS = -10V, ID = -9.5A
IS = -9.5A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7. UIS in production with L = 1mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMP3017SFK
Document number: DS37310 Rev. 4 - 2
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DMP3017SFK
30
30.0
VGS = -10V
25
VGS = -4.0V
20.0
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
25.0
VGS = -3.5V
VGS = -3.0V
15.0
10.0
5.0
20
15
10
TA = 150C
5
VGS = -2.5V
TA = 125C
0.0
0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.018
VGS = -4.5V
0.014
0.012
VGS = -10V
0.01
0.008
0.006
0.004
0.002
0
0
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
DMP3017SFK
Document number: DS37310 Rev. 4 - 2
0
5
0.02
0.016
TA = 85C
TA = 25C
T A = -55C
VGS = -2.2V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCE INFORMATION
NEW PRODUCT
VDS = -5.0V
30
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
-V GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.2
ID = -9.5A
0.18
0.16
ID = -6.9A
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
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0
5
10
15
20
-VGS, GATE SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
25
May 2015
© Diodes Incorporated
VGS = -10V
0.018
R DS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
0.02
TA = 150C
0.016
TA = 125C
0.014
TA = 85C
0.012
T A = 25C
0.01
0.008
TA = -55C
0.006
0.004
1.6
1.4
VGS = -4.5V
ID = -5A
1.2
1
0.8
0.002
0
0
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
30
3
0.03
2.8
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(on), DRAIN-SOURCE ON-RESISTANCE ()
0.025
0.02
VGS = -4.5V
ID = -5A
0.015
0.01
0.005
2.6
2.4
2.2
2
1.6
1.4
-ID = 250µA
1.2
1
0.8
0.6
0.4
0.2
0
-50
30
-I D = 1mA
1.8
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
10000
20
TA= 150C
15
TA= 125C
10
TA= 85C
T A= 25C
TA= -55C
5
0
0
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
DMP3017SFK
Document number: DS37310 Rev. 4 - 2
CT, JUNCTION CAPACITANCE (pF)
f = 1MHz
25
-IS, SOURCE CURRENT (A)
ADVANCE INFORMATION
NEW PRODUCT
DMP3017SFK
1.8
Ciss
1000
Coss
Crss
100
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0
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
May 2015
© Diodes Incorporated
DMP3017SFK
100
10
RDS(ON)
Limited
8
-ID, DRAIN CURRENT (A)
-VGS, GATE-SOURCE VOLTAGE (V)
7
6
VDS = -15V
ID = -9.5A
5
4
3
10
DC
PW = 10s
PW = 1s
1
PW = 1ms
0.1
TJ(max) = 150°C
TA = 25°C
VGS = -10V
Single Pulse
DUT on 1 * MRP Board
1
0
PW = 100ms
PW = 10ms
2
0
5
10 15 20 25 30 35 40
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
1
45
0.01
0.1
PW = 100µs
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
D = 0.9
D = 0.7
D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
NEW PRODUCT
9
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 59°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
DMP3017SFK
Document number: DS37310 Rev. 4 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
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10
100
1000
May 2015
© Diodes Incorporated
DMP3017SFK
Package Outline Dimensions
ADVANCE INFORMATION
NEW PRODUCT
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
A3
A1
D
e
L (3x)
Pin #1 ID
R0.150
E
E1
D1
L1 (2x)
U-DFN2523-6
Dim Min Max Typ
A
0.57 0.63 0.60
A1
0
0.05 0.02
A3

 0.152
b
0.25 0.35 0.30
D
2.45 2.55 2.50
D1 1.55 1.65 1.60
e
0.65


E
2.25 2.35 2.30
E1 1.18 1.28 1.23
L
0.30 0.40 0.35
L1
0.30 0.40 0.35
All Dimensions in mm
b (6x)
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
X1
Dimensions Value (in mm)
C
0.650
X
0.400
X1
1.700
Y
0.650
Y1
0.450
Y2
1.830
Y3
2.700
Y1
Y2
Y3
Y
C
DMP3017SFK
Document number: DS37310 Rev. 4 - 2
X
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DMP3017SFK
ADVANCE INFORMATION
NEW PRODUCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2015, Diodes Incorporated
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DMP3017SFK
Document number: DS37310 Rev. 4 - 2
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