UTC BD238G-T6S-K -80v, pnp transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BD238
PNP EPITAXIAL SILICON TRANSISTOR
-80V, PNP TRANSISTOR

DESCRIPTION
The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s
advanced technology to provide the customers with high DC current
gain and high collector-emitter breakdown voltage, etc.

FEATURES
* High DC current gain
* High collector-emitter breakdown voltage

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
BD238L-T60-K
BD238G-T60-K
TO-126
BD238L-T6S-K
BD238G-T6S-K
TO-126S
Note: Pin assignment: E: Emitter
B: Base
C: Collector

Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Bulk
Bulk
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UNISONIC TECHNOLOGIES CO., LTD
BD238

PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-2
A
Collector Power Dissipation
PC
1.25
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
fT
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
IC=-1mA, IE=0
IC=-100mA, IB=0
IC=-1mA, IE=0
VCB=-100V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-150mA
VCE=-2V, IC=-1A
IC=-1A, IB=-100mA
VCE=-10V, IC=-250mA,
f=10MHz
MIN
-100
-80
-5
TYP MAX UNIT
V
V
V
-100 µA
-1
mA
40
25
-0.6
3
V
MHz
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BD238
Collector Current, -IC (mA)
Collector Current, -IC (mA)
TYPICAL CHARACTERISTICS
Collector Current vs.
Collector-Emitter Voltage
1.2
Collector Current, -IC (A)

PNP EPITAXIAL SILICON TRANSISTOR
1
IB=-9.12mA
0.8
0.6
0.4
IB=-0.95mA
0.2
0
0
2.5
0.5
2
1
1.5
Collector-Emitter Voltage, -VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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