UNISONIC TECHNOLOGIES CO., LTD BD238 PNP EPITAXIAL SILICON TRANSISTOR -80V, PNP TRANSISTOR DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. FEATURES * High DC current gain * High collector-emitter breakdown voltage ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free BD238L-T60-K BD238G-T60-K TO-126 BD238L-T6S-K BD238G-T6S-K TO-126S Note: Pin assignment: E: Emitter B: Base C: Collector Pin Assignment 1 2 3 E C B E C B Packing Bulk Bulk MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R226-002.C UNISONIC TECHNOLOGIES CO., LTD BD238 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -2 A Collector Power Dissipation PC 1.25 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) fT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC=-1mA, IE=0 IC=-100mA, IB=0 IC=-1mA, IE=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-150mA VCE=-2V, IC=-1A IC=-1A, IB=-100mA VCE=-10V, IC=-250mA, f=10MHz MIN -100 -80 -5 TYP MAX UNIT V V V -100 µA -1 mA 40 25 -0.6 3 V MHz 2 of 3 QW-R226-002.C BD238 Collector Current, -IC (mA) Collector Current, -IC (mA) TYPICAL CHARACTERISTICS Collector Current vs. Collector-Emitter Voltage 1.2 Collector Current, -IC (A) PNP EPITAXIAL SILICON TRANSISTOR 1 IB=-9.12mA 0.8 0.6 0.4 IB=-0.95mA 0.2 0 0 2.5 0.5 2 1 1.5 Collector-Emitter Voltage, -VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R226-002.C