Cree® EZ900™ Gen II LEDs Data Sheet CxxxEZ900-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications such as general illumination, automotive lighting, and LCD backlighting. FEATURES APPLICATIONS ● ● EZBright LED Technology » 380 mW min. - 450 & 460 nm » 340 mW min - 470 nm General Illumination » Aircraft » Decorative Lighting ● Lambertian Radiation ● Conductive Epoxy, Solder Paste or Preforms, or Flux » Task Lighting Eutectic Attach » Outdoor Illumination ● Low Forward Voltage ● Dielectric Passivation across Epi Surface ● White LEDs ● LCD Backlighting ● Projection Displays ● Automotive CxxxEZ900-Sxx000-2 Chip Diagram Die Cross Section Bottom View Top View .B CPR3DX Rev Data Sheet: EZBright LED 880 x 880 μm2 Dielectric Passivation Cathodes (-) 150 x 150 μm2 Gold Bond Pads (2) t = 170 μm Backside Metalization Subject to change without notice. www.cree.com Anode (+) 3 μm AuSn 1 Maximum Ratings at TA = 25°C Note 1 CxxxEZ900-Sxx000-2 DC Forward Current 1000 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1250 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +125°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Part Number Note 2 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ900-Sxx000-2 2.9 3.3 3.8 2 20 C460EZ900-Sxx000-2 2.9 3.3 3.8 2 21 C470EZ900-Sxx000-2 2.9 3.3 3.8 2 22 Mechanical Specifications CxxxEZ900-Sxx000-2 Description Dimensions Tolerance P-N Junction Area (μm) 850 x 850 ± 35 Chip Area (μm) 880 x 880 ± 35 170 ± 25 Chip Thickness (μm) Top Au Bond Pad (μm) - Qty. 2 Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) Back Contact Metal Thickness (μm) 150 x 150 ± 25 3.0 ± 1.5 880 x 880 ± 35 3.0 ± 1.5 Notes: Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an integrating sphere using Illuminance E. 1. 2. Maximum Forward Current (mA) 1200 1000 800 Rth j-a = 10 Rth j-a = 15 Rth j-a = 20 Rth j-a = 25 600 400 °C/W °C/W °C/W °C/W 200 0 25 50 75 100 125 150 175 Ambient Temperature (˚C) Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ900 and EZ are trademarks of Cree, Inc. 2 CPR3DX Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Standard Bins for CxxxEZ900-Sxx000-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ900-Sxx000-2) orders may be filled with any or all bins (CxxxEZ900-0xxx-2) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. Radiant Flux C450EZ900-S38000-2 C450EZ900-0317-2 C450EZ900-0318-2 C450EZ900-0319-2 C450EZ900-0320-2 C450EZ900-0313-2 C450EZ900-0314-2 C450EZ900-0315-2 C450EZ900-0316-2 C450EZ900-0309-2 C450EZ900-0310-2 C450EZ900-0311-2 C450EZ900-0312-2 C450EZ900-0305-2 C450EZ900-0306-2 C450EZ900-0307-2 C450EZ900-0308-2 440 mW 420 mW 400 mW 380 mW 445 nm 447.5 nm 450 nm 452.5 nm 455 nm Dominant Wavelength Radiant Flux C460EZ900-S38000-2 C460EZ900-0317-2 C460EZ900-0318-2 C460EZ900-0319-2 C460EZ900-0320-2 C460EZ900-0313-2 C460EZ900-0314-2 C460EZ900-0315-2 C460EZ900-0316-2 C460EZ900-0309-2 C460EZ900-0310-2 C460EZ900-0311-2 C460EZ900-0312-2 C460EZ900-0305-2 C460EZ900-0306-2 C460EZ900-0307-2 C460EZ900-0308-2 440 mW 420 mW 400 mW 380 mW 455 nm 457.5 nm 460 nm 462.5 nm 465 nm Dominant Wavelength Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ900 and EZ are trademarks of Cree, Inc. 3 CPR3DX Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Radiant Flux Standard Bins for CxxxEZ900-Sxx000-2 (continued) C450EZ900-S34000-2 340 mW C450EZ900-0301-2 445 nm C450EZ900-0302-2 447.5 nm C450EZ900-0303-2 450 nm C450EZ900-0304-2 452.5 nm 455 nm Radiant Flux Dominant Wavelength C460EZ900-S34000-2 C460EZ900-0301-2 340 mW 455 nm C460EZ900-0302-2 457.5 nm C460EZ900-0303-2 460 nm C460EZ900-0304-2 462.5 nm 465 nm Dominant Wavelength Radiant Flux C470EZ900-S34000-2 C470EZ900-0313-2 C470EZ900-0314-2 C470EZ900-0315-2 C470EZ900-0316-2 C470EZ900-0309-2 C470EZ900-0310-2 C470EZ900-0311-2 C470EZ900-0312-2 C470EZ900-0305-2 C470EZ900-0306-2 C470EZ900-0307-2 C470EZ900-0308-2 C470EZ900-0301-2 C470EZ900-0302-2 C470EZ900-0303-2 C470EZ900-0304-2 420 mW 400 mW 380 mW 340 mW 465 nm 467.5 nm 470 nm 472.5 nm 475 nm Dominant Wavelength Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ900 and EZ are trademarks of Cree, Inc. 4 CPR3DX Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Relati 1 0.5 0 0 250 500 750 1000 1250 If (mA) Characteristic Curves, TA = 25°C This is a representative measurement for the EZ900 LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Voltage Shift Vs Junction Temperature 0.000 Forward Current vs. Forward Voltage Voltage Shift (V) Relative Light Intensity (%) 1250 1000 If (mA) 750 500 250 0 0 1 2 3 4 -0.100 0.95 -0.150 0.9 -0.200 0.85 0.8 -0.250 0.75 -0.300 0.7 -0.350 0.65 25 0.6 5 25 75 100 125 150 50 75 100 125 150 Junction Temperature (°C) Relative Intensity vs. Forward Current Dominant Wavelength Shift Vs Junction Temperature 3 Dominant Wavelength Shift (nm) 6 2.5 2 1.5 1 0.5 0 0 250 500 750 1000 5 4 3 2 1 0 1250 25 If (mA) 0.000 1.5 -0.050 Voltage Shift (V) Forward Current vs. Forward Voltage 1250 0.5 0 1000 -0.5 750-1 0 250 500 250 0 100 125 150 -0.100 -0.150 -0.200 -0.250 -0.300 -1.5 500 -2 75 Voltage Shift Vs Junction Temperature 2 1 50 Junction Temperature (°C) Dominant Wavelength vs. Forward Current If (mA) DW Shift (nm) 50 Junction Temperature (°C) Vf (V) Relative Intensity Relative Light Intensity Vs Junction Temperature -0.050 1 750 1000 1250 -0.350 25 If (mA) 0 1 2 50 75 100 125 150 Junction Temperature (°C) 3 4 5 Vf (V) Dominant Wavelength Shift Vs Junction Temperature Cree, Inc. 5 CPR3DX Rev. B th Shift (nm) 6 Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ900 and EZ are trademarks of Cree, Inc. 5 4 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ900 and EZ are trademarks of Cree, Inc. 6 CPR3DX Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com