MMBT5088LT1G, MMBT5089LT1G Low Noise Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Symbol MMBT5088 MMBT5089 MMBT5088 MMBT5089 Emitter−Base Voltage Collector Current − Continuous VCEO VCBO Value Unit 2 EMITTER Vdc 30 25 Vdc 35 30 3 1 VEBO 4.5 Vdc IC 50 mAdc 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature SOT−23 (TO−236) CASE 318 STYLE 6 Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C PD RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1x M G G 1 1x = Device Code x = Q for MMBT5088LT1 x = R for MMBT5089LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT5088LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBT5089LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 3 1 Publication Order Number: MMBT5088LT1/D MMBT5088LT1G, MMBT5089LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 30 25 − − 35 30 − − − − 50 50 − − 50 100 300 400 900 1200 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) MMBT5088 MMBT5089 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MMBT5088 MMBT5089 Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) MMBT5088 MMBT5089 Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) MMBT5088 MMBT5089 V(BR)CEO V(BR)CBO ICBO IEBO Vdc Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) MMBT5088 MMBT5089 hFE (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5088 MMBT5089 350 450 − − (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5088 MMBT5089 300 400 − − − 0.5 − 0.8 50 − − 4.0 − 10 350 450 1400 1800 − − 3.0 2.0 Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) fT Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded) Ccb Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded) Ceb Small Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) MMBT5088 MMBT5089 Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz) RS MMBT5088 MMBT5089 in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 hfe NF MHz pF pF − dB MMBT5088LT1G, MMBT5089LT1G NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 RS ≈ 0 IC = 10 mA en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) 20 3.0 mA 10 1.0 mA 7.0 5.0 RS ≈ 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 1.0 kHz 5.0 300 mA 3.0 10 20 50 100 200 3.0 0.01 0.02 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 3.0 mA 1.0 mA 300 mA 0.3 100 mA 0.2 RS ≈ 0 0.1 10 20 10 mA 50 100 200 10 16 3.0 1.0 0.7 0.5 5.0 20 BANDWIDTH = 1.0 Hz 2.0 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 100 kHz BANDWIDTH = 10 Hz to 15.7 kHz 12 500 mA 8.0 IC = 1.0 mA 100 mA 10 mA 4.0 30 mA 0 10 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz IC = 10 mA 16 100 mA 100 70 50 NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 3.0 mA 1.0 mA 30 300 mA 20 10 7.0 5.0 30 mA 10 mA IC = 10 mA 3.0 mA 1.0 mA 12 300 mA 8.0 100 mA 30 mA 4.0 10 mA BANDWIDTH = 1.0 Hz 3.0 0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) 10 Figure 6. Total Noise Voltage 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure http://onsemi.com 3 h FE, DC CURRENT GAIN (NORMALIZED) MMBT5088LT1G, MMBT5089LT1G 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 -55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 1.0 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 10 Figure 8. DC Current Gain -0.4 RθVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ °C) 1.0 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 -0.8 -1.2 TJ = 25°C to 125°C -1.6 -2.0 -55°C to 25°C VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25°C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 9. Temperature Coefficients f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 11. “On” Voltages 20 50 100 Figure 12. Capacitance 500 300 200 100 VCE = 5.0 V TJ = 25°C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current−Gain — Bandwidth Product http://onsemi.com 4 MMBT5088LT1G, MMBT5089LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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