ON MMBT5088LT1G Low noise transistors npn silicon Datasheet

MMBT5088LT1G,
MMBT5089LT1G
Low Noise Transistors
NPN Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Symbol
MMBT5088
MMBT5089
MMBT5088
MMBT5089
Emitter−Base Voltage
Collector Current − Continuous
VCEO
VCBO
Value
Unit
2
EMITTER
Vdc
30
25
Vdc
35
30
3
1
VEBO
4.5
Vdc
IC
50
mAdc
2
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
SOT−23 (TO−236)
CASE 318
STYLE 6
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1x M G
G
1
1x
= Device Code
x = Q for MMBT5088LT1
x = R for MMBT5089LT1
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT5088LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBT5089LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 3
1
Publication Order Number:
MMBT5088LT1/D
MMBT5088LT1G, MMBT5089LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
30
25
−
−
35
30
−
−
−
−
50
50
−
−
50
100
300
400
900
1200
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MMBT5088
MMBT5089
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBT5088
MMBT5089
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
MMBT5088
MMBT5089
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
MMBT5088
MMBT5089
V(BR)CEO
V(BR)CBO
ICBO
IEBO
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
MMBT5088
MMBT5089
hFE
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT5088
MMBT5089
350
450
−
−
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBT5088
MMBT5089
300
400
−
−
−
0.5
−
0.8
50
−
−
4.0
−
10
350
450
1400
1800
−
−
3.0
2.0
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
fT
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded)
Ccb
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded)
Ceb
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
MMBT5088
MMBT5089
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz)
RS
MMBT5088
MMBT5089
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
hfe
NF
MHz
pF
pF
−
dB
MMBT5088LT1G, MMBT5089LT1G
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS ≈ 0
IC = 10 mA
en , NOISE VOLTAGE (nV)
en , NOISE VOLTAGE (nV)
20
3.0 mA
10
1.0 mA
7.0
5.0
RS ≈ 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 mA
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
IC = 10 mA
3.0 mA
1.0 mA
300 mA
0.3
100 mA
0.2
RS ≈ 0
0.1
10
20
10 mA
50 100 200
10
16
3.0
1.0
0.7
0.5
5.0
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1
0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Effects of Collector Current
NF, NOISE FIGURE (dB)
In, NOISE CURRENT (pA)
10
7.0
5.0
100 kHz
BANDWIDTH = 10 Hz to 15.7 kHz
12
500 mA
8.0
IC = 1.0 mA
100 mA
10 mA
4.0
30 mA
0
10
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
20
Figure 4. Noise Current
50 100 200 500 1k 2k
5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
16
100 mA
100
70
50
NF, NOISE FIGURE (dB)
VT, TOTAL NOISE VOLTAGE (nV)
300
200
3.0 mA
1.0 mA
30
300 mA
20
10
7.0
5.0
30 mA
10 mA
IC = 10 mA
3.0 mA
1.0 mA
12
300 mA
8.0
100 mA
30 mA
4.0
10 mA
BANDWIDTH = 1.0 Hz
3.0
0
10
20
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
10
Figure 6. Total Noise Voltage
20
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
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3
h FE, DC CURRENT GAIN (NORMALIZED)
MMBT5088LT1G, MMBT5089LT1G
4.0
3.0
VCE = 5.0 V
2.0
TA = 125°C
25°C
1.0
-55°C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
1.0
0.2
0.3
0.5
IC, COLLECTOR CURRENT (mA)
2.0
3.0
5.0
10
Figure 8. DC Current Gain
-0.4
RθVBE, BASE-EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
1.0
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
-0.8
-1.2
TJ = 25°C to 125°C
-1.6
-2.0
-55°C to 25°C
VCE(sat) @ IC/IB = 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50
-2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25°C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
VR, REVERSE VOLTAGE (VOLTS)
50 100
Figure 9. Temperature Coefficients
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 11. “On” Voltages
20
50
100
Figure 12. Capacitance
500
300
200
100
VCE = 5.0 V
TJ = 25°C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 10. Current−Gain — Bandwidth Product
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4
MMBT5088LT1G, MMBT5089LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT5088LT1/D
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