140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz 2 • High FT - 4 GHz (typ) @ IC = 15 mAdc 1 3 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Designed primarily for use IN High Gain, low noise general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage Value 15 Unit Vdc VCBO VEBO Collector-Base Voltage 25 Vdc Emitter-Base Voltage 3.0 Vdc IC Collector Current 30 mA 200 1.14 mWatts mW/ ºC Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC MSC1324.PDF 10-25-99 MRF904 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 15 - - Vdc Collector-Base Breakdown Voltage (IC= .1 mAdc, IE=0) 25 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 3.0 - - - - 50 nA 30 - 200 - Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) Vdc (on) HFE DC Current Gain (IC = 5.0 mAdc, VCE = 5 Vdc) DYNAMIC Symbol fT CCB NF Test Conditions Value Min. Typ. Max. Unit Current-Gain - Bandwidth Product (IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz) - 4.0 - GHz Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - 1.0 1.5 pF Noise Figure (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz) - 1.5 - dB MSC1324.PDF 10-25-99 MRF904 Functional Symbol Test Conditions Value Min. Typ. Max. Unit Maximum Unilateral Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) - 11 7 - dB |21| 2 Maximum Available Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) 9.5 - 10.5 6.5 - dB MAG Maximum Available Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) - 11 7 - dB GU max S (1) Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2) Table 1. Common Emitter S-Parameters, @ VCE = 5 V, IC = 6 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .66 -37 10.5 131 .040 71 .781 -23 200 .41 -52 7.03 111 .065 71 .597 -27 300 .31 -54 5.33 98 .093 70 .551 -26 400 .26 -59 4.00 90 .111 69 .517 -30 500 .20 -61 3.38 87 .136 71 .467 -30 600 .18 -59 3.00 81 .162 68 .455 -32 700 .16 -60 2.69 75 .186 66 .438 -36 800 .16 -66 2.30 70 .200 63 .437 -42 900 .15 -74 2.16 71 .215 65 .409 -47 1000 .15 -76 2.16 63 .243 62 .413 -48 MSC1324.PDF 10-25-99 ∠φ MRF904 MSC1324.PDF 10-25-99