IRFS250A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 21.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V TO-3PF Low RDS(ON) : 0.071 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage o ID Continuous Drain Current (TC=25 C) Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD TJ , TSTG TL Units 200 V 21.3 o Continuous Drain Current (TC=100 C) IDM Value A 13.5 1 O 130 A + _ 30 V O 1 O 1 O O3 605 mJ 21.3 A 2 Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and 9 mJ 5.0 V/ns 90 W 0.72 W/ C o - 55 to +150 Storage Temperature Range o Maximum Lead Temp. for Soldering C 300 Purposes, 1/8 “ from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units RθJC Junction-to-Case -- 1.38 o RθJA Junction-to-Ambient -- 40 C/W Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET IRFS250A Electrical Characteristics (TC=25oC unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆BV/∆TJ Breakdown Voltage Temp. Coeff. VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units 200 -- --- 2.0 -- 4.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 0.085 Ω VGS=10V,ID=10.65A 4 O -- Ω VDS=40V,ID=10.65A 4 O Gate Threshold Voltage Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- 16.64 Ciss Input Capacitance -- 2300 3000 Coss Output Capacitance -- 410 475 Crss Reverse Transfer Capacitance -- 200 230 td(on) Turn-On Delay Time -- 21 50 Rise Time -- 20 50 Turn-Off Delay Time -- 77 160 Fall Time -- 38 90 Qg Total Gate Charge -- 95 123 Qgs Gate-Source Charge -- 18 -- Qgd Gate-Drain(“Miller”) Charge -- 45.3 -- tf See Fig 7 0.24 Forward Transconductance td(off) VGS=0V,ID=250µA o V/ C ID=250 µA -- gfs tr V Test Condition V nA µA pF VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=200V o VDS=160V,TC=125 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=32A, ns RG=6.2 Ω See Fig 13 4 O 5 O VDS=160V,VGS=10V, nC ID=32A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- 21.3 ISM Pulsed-Source Current 1 O -- -- 130 VSD Diode Forward Voltage O -- -- 1.5 V TJ=25oC,IS=21.3A,VGS=0V trr Reverse Recovery Time -- 203 -- ns TJ=25oC ,IF=32A Qrr Reverse Recovery Charge -- 1.52 -- µC diF/dt=100A/µ s 4 A Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=2mH, I AS=21.3A, V DD=50V, R G=27Ω, Starting T J =25 C O _ < _ BVDSS , Starting T J =25 oC µs, V DD < O3 ISD <_ 32A, di/dt 320A/ _ 2% Pulse Test : Pulse Width = 250 4 µs, Duty Cycle < O Essentially Independent of Operating Temperature 5 O Integral reverse pn-diode in the MOSFET 4 O N-CHANNEL POWER MOSFET IRFS250A Fig 1. Output Characteristics 102 Fig 2. Transfer Characteristics VGS 102 ID , Drain Current ID , Drain Current 101 [A] 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V [A] Top : @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 100 10-1 100 150 oC 101 25 oC - 55 oC 3. 250 µs Pulse Test 100 101 2 4 6 8 10 VGS , Gate-Source Voltage [V] [A] VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage 0.20 0.15 IDR , Reverse Drain Current RDS(on) , [Ω] Drain-Source On-Resistance @ Notes : 1. VGS = 0 V 2. VDS = 40 V VGS = 10 V 0.10 0.05 VGS = 20 V @ Note : TJ = 25 oC 25 50 75 100 125 10 101 150 @ Notes : 1. VGS = 0 V 150 oC o 25 C 100 0.4 0.00 0 2 ID , Drain Current [A] 0.6 2. 250 µs Pulse Test 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage [V] 3000 C iss Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VGS , Gate-Source Voltage Capacitance [pF] 4000 2000 C oss 1000 00 10 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss 101 VDS , Drain-Source Voltage [V] VDS = 40 V 10 VDS = 100 V VDS = 160 V 5 @ Notes : ID = 32.0 A 0 0 20 40 60 QG , Total Gate Charge [nC] 80 100 N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 1.2 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage IRFS250A 1.1 1.0 0.9 @ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 150 3.0 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 2. ID = 16.0 A 0.5 0.0 -75 175 -50 TJ , Junction Temperature [ oC] Fig 9. Max. Safe Operating Area 25 50 75 100 125 150 175 Fig 10. Max. Drain Current vs. Case Temperature 25 [A] [A] ID , Drain Current Operation in This Area is Limited by R DS(on) 102 100 µs 10 µs 1 ms 101 10 ms DC @ Notes : 1. TC = 25 oC 20 15 10 5 2. TJ = 150 oC 3. Single Pulse 10-1 100 101 0 25 102 50 75 100 Tc , Case Temperature [ oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response 100 D=0.5 0.2 @ Notes : 1. Zθ J C (t)=1.38 0.1 10- 1 0.05 3. TJ M -TC =PD M *Z C/W Max. θJ C 0.02 0.01 (t) PDM single pulse t1 t2 10- 2 10- 5 o 2. Duty Factor, D=t1 /t2 θ Z JC(t) , ID , Drain Current 0 TJ , Junction Temperature [ oC] 103 100 -25 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 125 150 N-CHANNEL POWER MOSFET IRFS250A Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET IRFS250A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.