IXYS IXFX73N30Q Hiperfet power mosfets q-class Datasheet

HiPerFETTM
Power MOSFETs
IXFK 73N30Q
IXFX 73N30Q
VDSS = 300 V
ID25 = 73 A
Ω
RDS(on) = 45 mΩ
trr ≤ 250 ns
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low trr
PLUS 247TM (IXFX)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
300
300
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
73
292
73
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
10
V/ns
PD
TC = 25°C
500
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TJ
TJM
Tstg
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque (TO-264)
Weight
PLUS 247
TO-264
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1mA
300
2.0
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±30 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
© 2003 IXYS All rights reserved
0.4/6 Nm/lb.in.
6
10
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
4.0 V
±100 nA
TJ = 125°C
25 µA
2 mA
45 mΩ
G
(TAB)
D
TO-264 (IXFK)
G
G = Gate
S = Source
D
(TAB)
S
D = Drain
TAB = Drain
Features
z
IXYS advanced low Qg process
z
Low gate charge and capacitances
- easier to drive
- faster switching
z
International standard packages
z
Low RDS (on)
z
Rated for unclamped Inductive load
switching (UIS) rated
z
Molding epoxies meet UL 94 V-0
flammability classification
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
z
Temperature and lighting controls
Advantages
PLUS 247TM package for clip or spring
mounting
z
Space savings
z
High power density
z
DS98870B(08/03)
IXFK 73N30Q
IXFX 73N30Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25
Note 1
30
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
55
S
5400
pF
1300
pF
Crss
370
pF
td(on)
37
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
36
ns
td(off)
RG = 1 Ω (External)
82
ns
12
ns
195
nC
42
nC
82
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.22
RthJC
RthCK
0.15
Source-Drain Diode
Symbol
Test Conditions
IS
V GS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
trr
QRM
K/W
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
IRM
73
A
292
A
1.5
V
250
ns
0.8
µC
7
A
PLUS 247TM Outline (IXFX)
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 Outline (IXFK)
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXFK 73N30Q
IXFX 73N30Q
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25 deg. C
@ 25 Deg. C
80
180
VGS = 10V
9V
8V
7V
ID - Amperes
ID - Amperes
60
VGS = 10V
9V
8V
150
6V
40
20
5V
90
6V
60
30
0
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
3
6
V DS - Volts
9
12
15
V DS - Volts
Fig. 3. Output Characteristics
Fig. 4. R DS(on) Norm alized to I D25 Value vs.
@ 125 Deg. C
Junction Temperature
2.5
80
VGS = 10V
9V
8V
7V
VGS = 10V
2.2
RDS(on) - Normalized
60
ID - Amperes
7V
120
6V
40
5V
20
1.9
1.6
ID = 73A
1.3
ID = 36.5A
1
0.7
0.4
0
0
1
2
3
4
5
6
7
-50
8
-25
V DS - Volts
0
Fig. 5. R DS(on) Norm alized to I D25
50
75
100
125
150
Fig. 6. Drain Current vs. Case
Tem perature
Value vs. I D
3.1
80
VGS = 10V
2.8
70
2.5
60
2.2
ID - Amperes
RDS(on) - Normalized
25
TJ - Degrees Centigrade
T J = 125ºC
1.9
1.6
1.3
50
40
30
20
T J = 25ºC
1
10
0.7
0
0
30
60
90
120
ID - Amperes
© 2003 IXYS All rights reserved
150
180
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFK 73N30Q
IXFX 73N30Q
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
120
150
Gfs - Siemens
ID - Amperes
T J = -40ºC
25ºC
125ºC
100
120
90
T J = -40ºC
25ºC
125ºC
60
80
60
40
30
20
0
0
3.5
4
4.5
5
5.5
6
6.5
0
7
30
60
90
V GS - Volts
Fig. 9. Source Current vs. Source-To-Drain
10
150
8
120
VGS - Volts
IS - Amperes
180
90
60
180
210
VDS = 125V
ID = 36.5A
IG = 10mA
6
4
T J = 25ºC
2
30
0
0
0.4
0.6
0.8
1
1.2
0
1.4
V SD - Volts
100
150
200
Fig. 12. Maxim um Transient Therm al
Resistance
1
10000
R(th)JC - (ºC/W)
C iss
f = 1M hz
C oss
1000
50
QG - nanoCoulombs
Fig. 11. Capacitance
Capacitance - pF
150
Fig. 10. Gate Charge
Voltage
T J = 125ºC
120
ID - Amperes
0.1
C rss
100
0.01
0
10
20
30
40
V DS - Volts
1
10
100
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
1000
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