L/^ioaucti, LJnc. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U'SA TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV36 VHP LINEAR PUSH-PULL POWER TRANSISTOR Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is primarily intended for use in linear VHP television transmitters and transposes (vision or sound amplifier). Features Internally matched input for wideband operation and high power gain Internal midpoint (RF ground) reduces negative feedback and improves power gain Increased input and output impedance (compared with single-ended transistors) simplify wideband matching Length of external emitter leads is not critical Diffused emitter balancing resistors for an optimum temperature profile Gold metallization ensures excellent reliability The envelope is an 8-lead flange type with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA RF performance in push-pull amplifier mode of operation y,,g CW; class-AB 28 f PL Th GP A MHz W °C dB 2 x 0.25 224.25 .... „ 11b l* gain compression dB nc % > 11.0 typ. 13.0 > 48 typ. 55 <1.0* * Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% sync input/25% sync output compression in television service (negative modulation, CCIR system). MECHANICAL DATA SOT161 (see Fig.1). MECHANICAL DATA Fig,1 SOT161. 17 16 Pinning _ 3 "* min *" 1,14 i 1 1 1— ^L \ hi '02 .„. 16 * 9 I i t, ,'j (2x) \ -- 25'2 max 18,42 - ' 5 7 j t J 1 2 = 1 -o' (2y) 26 ' 't 1 - Emitter Emitter 3 = Collector (No.2) 4 = Base (No.2) 5 = Collector (No.1) 6 = Base (No.1) 7 - Emiiter 8 " Emitter .*, -»-o 14 d 18 •< ^\ ^ 1,14 t „ n ~ramlc k I 10,3 max I 1 •*- 10.2 -*i , BdO * 2,54 "N 3,35.- . "^irmtal 1 i 4 ^n 4,05 | 4 7,5 max | Torque on screw: min. 0.60 Nm max. 0.75 Nm Recommended screw: cheese-head 4-40 UNC/2A Heatsink compound must be sparingly applied and evenly distributed. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors BLV36 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); (peak value); V0£ = 0 VCESM open base VCEO Emitter-base voltage (open collector) VEBO Collector current per transistor section DC or average 'C- 'C(AV) (peak value); f> 1 MHz 'CM Total DC power dissipation; Tmb = 25 °C p tot(DC) RF power dissipation f>1 MHz;Tmb = 25°C p tot(RF) Storage temperature range Tstg Operating junction temperature Ti max. max. max. 65 V 33 V 4 V max. 8.5 A 17.5 A 218 W* max. max. max. 270 W* -65 to +150 °C max. 200 °C 300 17 i 'c ^ ~\ rib' 5° I A) ID ptot (W) \v \1 V \ 5 1h-70°C 1 \ * 100 2 10 33 VCE(VI (1) Second breakdown limit. Fig.2 DC SOAR. Conditions for Figs 2 and 3: Rth mb-h = 0.25 K/W; Total device*. THERMAL RESISTANCE (dissipation = 180 W; Tmb = 25 °C)* * From junction to mounting base (DC dissipation) From junction to mounting base (RF dissipation) From mounting base to heatsink 80 40 I II III Continuous DC operation Continuous RF operation; (f > 1 MHz) Short-time operation during mismatch; (f > 1 MHz) Fig.3 Power/temperature derating curves. R thj-mb(DC) - 0.85 K/W R thj-mb(RF) " 0.64 K/W 0.25 K/W Rth mb-h Dissipation of either transistor section shall not exceed half rated power. Both transistor sections equally loaded. BLV36 CHARACTERISTICS Apply to either transistor section unless otherwise specified. Tj = 25 °C. Collector-emitter breakdown voltage V BE = °; lc= 25mA open base; IG= 100mA Emitter-base breakdown voltage open collector; IE = 10mA Collector cut-off current VgE = 0; VQE = 33 V Second-breakdown energy; L = 25 mH; f = 50 Hz DC current gain* IC = 3.5A;V C E =25V Transition frequency at f = 100 MHz* -IE = 3.3 A;Vce = 25 v -IE = 10A;V CB = 25V V (BR)CES V(BR)CEO > > V (BR)EBO > 'CES h FE fT 65 v 33 v 4 V "^ 10 > 10 mJ ™- ^ mA £ fT WPtyp. 575 MHz 600 MHz Cc typ. 155 pF Collector capacitance at f = 1 MHz lE = ie = 0;V C B = 25V Feedback capacitance at f = 1 MHz lc = 50mA;Vc E = 25V Cre typ. 88 pF Collector-flange capacitance Ccf typ. 2 pF