UNISONIC TECHNOLOGIES CO., LTD DBC2314 DUAL TRANSISTOR DIGITAL TRANSISTOR (BUILT-IN BIAS RESISTORS) DESCRIPTION * Both the DTB123Y chip and DTC114Y chip in a SOT-26 package. * NPN/PNP silicon transistor(Built-in resistor type) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. EQUIVALENT CIRCUITS ORDERING INFORMATION Ordering Number Package DBC2314G-AG6-R Note: Pin Assignment: C: Collector B: Base SOT-26 E: Emitter DBC2314G-AG6-R (1)Packing Type 1 C1 Pin Assignment 2 3 4 5 E1 C2 B2 E2 6 B1 Packing Tape Reel (1) R: Tape Reel (2)Package Type (2) AG6: SOT-26 (3)Green Package (3) G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R222-007.a DBC2314 DUAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT -50 V Supply Voltage VCC 50 V -12~+5 V Input Voltage VIN -6~+40 V -500 mA Output Current IC 100 mA Power Dissipation PD 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. TR1 TR2 TR1 TR2 TR1 TR2 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) TR1 (PNP) PARAMETER OFF CHARACTERISTICS Input Voltage SYMBOL VIN(OFF) VIN(ON) VOUT(ON) IIN IOUT(OFF) Output Voltage Input Current Output Current ON CHARACTERISTICS DC Current Gain hFE SMALL SIGNAL CHARACTERISTICS Input Resistance R1 Resistor Ratio R2/R1 Transition Frequency (Note 1) fT TR2 (NPN) PARAMETER OFF CHARACTERISTICS Input Voltage TEST CONDITIONS VCC =-5V, IOUT =-100μA VOUT =-0.3V, IOUT =-20mA IOUT/IIN =-50mA/-2.5mA VIN=-5V VCC =-50V, VIN =0V VOUT =-5V, IOUT =-50mA Output Voltage Input Current Output Current ON CHARACTERISTICS DC Current Gain hFE SMALL SIGNAL CHARACTERISTICS Input Resistance R1 R2 Resistor Ratio R1 Transition Frequency fT Note 1. Transition frequency of the device VOUT =5V, IOUT =5mA VCE =10V, IE =−5mA, f=100MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX -0.3 UNIT V -0.1 -0.3 -3.0 -0.5 V mA μA 2.2 4.5 200 2.86 5.5 KΩ TYP MAX UNIT 0.3 56 VCE =-10V, IE =50mA, f=100MHz VCC =5V, IOUT =100μA VOUT =0.3V, IOUT =1mA IOUT/IIN =5mA/0.25mA VIN=5V VCC =50V, VIN =0V TYP -2 1.54 3.6 SYMBOL TEST CONDITIONS VIN(OFF) VIN(ON) VOUT(ON) IIN IOUT(OFF) MIN MIN MHz 0.1 0.3 0.88 0.5 V V V mA μA 7 10 13 KΩ 3.7 4.7 5.7 1.4 68 250 MHz 2 of 3 QW-R222-007.a DBC2314 DUAL TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R222-007.a