BUK7508-55A; BUK7608-55A TrenchMOS™ standard level FET Rev. 02 — 17 January 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7508-55A in SOT78 (TO-220AB) BUK7608-55A in SOT404 (D2-PAK). 2. Features ■ ■ ■ ■ TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible. ■ ■ ■ ■ Automotive systems Motors, lamps and solenoids 12 V and 24 V loads General purpose power switching. 3. Applications 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline [1] Symbol mb d mb g MBB076 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) s BUK7508-55A; BUK7608-55A Philips Semiconductors TrenchMOS™ standard level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter VDS Conditions Typ Max Unit - 55 V - 126 A - 254 W - 175 °C Tj = 25 °C 6.8 8 mΩ Tj = 175 °C - 16 mΩ drain-source voltage (DC) ID drain current (DC) Tmb = 25 °C; VGS = 10 V Ptot total power dissipation Tmb = 25 °C Tj junction temperature RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 25 A 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) ID RGS = 20 kΩ drain current (DC) Min Max Unit - 55 V - 55 V - ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 [1] - 126 A [2] - 75 A Tmb = 100 °C; VGS = 10 V; Figure 2 [2] - 75 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 504 A Ptot total power dissipation Tmb = 25 °C; Figure 1 - 254 W Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C [1] - 126 A [2] - 75 Tmb = 25 °C; pulsed; tp ≤ 10 µs - 504 A unclamped inductive load; ID = 75 A; VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C - 670 mJ Source-drain diode IDR IDRM reverse drain current (DC) pulsed reverse drain current Tmb = 25 °C Avalanche ruggedness WDSS non-repetitive avalanche energy [1] [2] Current is limited by power dissipation chip rating Continuous current is limited by package © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data Rev. 02 — 17 January 2002 2 of 14 BUK7508-55A; BUK7608-55A Philips Semiconductors TrenchMOS™ standard level FET 03na19 120 Pder 03nh50 140 ID (A) 120 (%) 100 100 80 80 60 60 40 Capped at 75 A due to package 40 20 20 0 0 0 25 50 75 100 125 150 175 25 200 50 75 100 125 150 175 200 Tmb (ºC) Tmb (ºC) VGS ≥ 4.5 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 103 03nh48 ID (A) tp = 10 µs RDSon = VDS / ID 102 100 µs Capped at 75 A due to package 1 ms DC 10 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data Rev. 02 — 17 January 2002 3 of 14 BUK7508-55A; BUK7608-55A Philips Semiconductors TrenchMOS™ standard level FET 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-a) thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W mounted on printed circuit board; minimum footprint; SOT404 package 50 K/W Figure 4 0.59 K/W thermal resistance from junction to mounting base Rth(j-mb) 7.1 Transient thermal impedance 03nh49 1 Zth(j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 0.02 10-2 δ= P tp T Single Shot t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data Rev. 02 — 17 January 2002 4 of 14 Philips Semiconductors BUK7508-55A; BUK7608-55A TrenchMOS™ standard level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 55 - - V Tj = −55 °C 50 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V Tj = 25 °C - 0.05 10 µA Tj = 175 °C - - 500 µA - 2 100 nA Tj = 25 °C - 6.8 8 mΩ Tj = 175 °C - - 16 mΩ - 76 - nC - 16 - nC - 35 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 - 3264 4352 pF - 719 863 pF - 390 533 pF VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; RG = 10 Ω; - 24 - ns - 94 - ns - 100 - ns VDS = 55 V; VGS = 0 V IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-to-source charge Qgd gate-to-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time Ld internal drain inductance Ls internal source inductance VGS = 0 V; VDD = 44 V; ID = 25 A; Figure 14 - 80 - ns from drain lead 6 mm from package to centre of die - 4.5 - nH from contact screw on mounting base to centre of die SOT78 - 3.5 - nH from upper edge of drain mounting base to centre of die SOT404 - 2.5 - nH from source lead to source bond pad - 7.5 - nH © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data Rev. 02 — 17 January 2002 5 of 14 BUK7508-55A; BUK7608-55A Philips Semiconductors TrenchMOS™ standard level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 75 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V - ns - nC 03nh44 RDSon 7.0 V 10 V 65 170 14 03nh45 ID160 18 V (A) 140 - (mΩ) 8.0 V 12 6.5 V 120 100 6.0 V 10 80 60 5.5 V 8 40 5.0 V 20 VGS = 4.5 V 6 0 0 2 4 6 8 10 VDS (V) 5 Tj = 25 °C; tp = 300 µs 10 15 VGS (V) 20 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03ne89 2 03nh46 25 a RDSon (mΩ) 6 VGS = 5.5 (V) 20 1.5 1 15 6.5 7 10 7.5 0.5 9 10 0 5 0 20 40 60 80 100 120 ID (A) Tj = 25 °C -60 60 120 Tj (ºC) 180 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data 0 Rev. 02 — 17 January 2002 6 of 14 BUK7508-55A; BUK7608-55A Philips Semiconductors TrenchMOS™ standard level FET 03aa32 max 10-1 ID (A) 10-2 3 typ 10-3 2 min 10-4 5 VGS(th) (V) 4 03aa35 min typ max 10-5 1 10-6 0 -60 0 60 120 o Tj ( C) 180 0 2 4 6 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03nh42 60 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03nh47 7000 C (pF) 6000 gfs (S) Ciss 5000 40 Coss 4000 3000 Crss 20 2000 1000 0 0 0 20 40 60 80 ID (A) 100 Tj = 25 °C; VDS = 25 V 10-2 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data 10-1 Rev. 02 — 17 January 2002 7 of 14 BUK7508-55A; BUK7608-55A Philips Semiconductors TrenchMOS™ standard level FET 03nh43 100 03nh41 10 ID (A) VGS (V) 80 8 VDD = 14 (V) 60 6 40 4 Tj = 175 ºC VDD = 44 (V) Tj = 25 ºC 20 2 0 0 0 2 4 6 VGS (V) 8 0 20 40 60 QG (nC) 80 Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 03nh40 100 IS (A) 80 Tj = 175 ºC 60 40 Tj = 25 ºC 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V) VGS = 0 V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data Rev. 02 — 17 January 2002 8 of 14 BUK7508-55A; BUK7608-55A Philips Semiconductors TrenchMOS™ standard level FET 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION REFERENCES IEC SOT78 JEDEC EIAJ 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16 Fig 16. SOT78 (TO-220AB). © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data Rev. 02 — 17 January 2002 9 of 14 BUK7508-55A; BUK7608-55A Philips Semiconductors TrenchMOS™ standard level FET Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-25 01-02-12 SOT404 Fig 17. SOT404 (D2-PAK). © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data Rev. 02 — 17 January 2002 10 of 14 BUK7508-55A; BUK7608-55A Philips Semiconductors TrenchMOS™ standard level FET 10. Soldering 10.85 10.60 10.50 handbook, full pagewidth 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 MSD057 occupied area solder paste Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data Rev. 02 — 17 January 2002 11 of 14 Philips Semiconductors BUK7508-55A; BUK7608-55A TrenchMOS™ standard level FET 11. Revision history Table 6: Revision history Rev Date CPCN Description 02 20020117 - Product Specification; second version, supersedes Rev 01 of 20000101 01 20000101 - Product Specification; initial manuscript version © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Product data Rev. 02 — 17 January 2002 12 of 14 BUK7508-55A; BUK7608-55A Philips Semiconductors TrenchMOS™ standard level FET 12. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 13. Definitions 14. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09091 Rev. 02 — 17 January 2002 13 of 14 Philips Semiconductors BUK7508-55A; BUK7608-55A TrenchMOS™ standard level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 17 January 2002 Document order number: 9397 750 09091