Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage VCBO 50 30 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 45 25 — — — — 50 30 — — — — 5.0 — — — — — — 100 100 — — — — 100 100 — — 100 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector – Emitter Breakdown Voltage (IC = 100 µA, IE = 0) V(BR)CEO BC337 BC338 Vdc V(BR)CES BC337 BC338 Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) BC337 BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338 Vdc ICBO nAdc ICES Emitter Cutoff Current (VEB = 4.0 V, IC = 0) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 IEBO Vdc nAdc nAdc 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 100 100 160 250 60 — — — — — 630 250 400 630 — Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE — BC337/BC338 BC337–16/BC338–16 BC337–25/BC338–25 BC337–40/BC338–40 (IC = 300 mA, VCE = 1.0 V) Base–Emitter On Voltage (IC = 300 mA, VCE = 1.0 V) VBE(on) — — 1.2 Vdc Collector – Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) — — 0.7 Vdc Cob — 15 — pF fT — 210 — MHz SMALL–SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 SINGLE PULSE 0.01 0.03 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.01 0.001 θJC(t) = (t) θJC θJC = 100°C/W MAX θJA(t) = r(t) θJA θJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) P(pk) 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 5.0 10 20 50 100 Figure 1. Thermal Response 1.0 s 1.0 ms 1000 TJ = 135°C 100 µs hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 1000 dc TC = 25°C dc TA = 25°C 100 10 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR–EMITTER VOLTAGE 100 Figure 2. Active Region — Safe Operating Area 2 VCE = 1 V TJ = 25°C 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMP) 1000 Figure 3. DC Current Gain Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.0 TA = 25°C VBE(sat) @ IC/IB = 10 0.8 0.8 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 Figure 4. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 5. “On” Voltages 100 +1 θVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C V, VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 0 –1 θVB for VBE –2 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 6. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data Cib 10 Cob 1 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 7. Capacitances 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. 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