Vishay IL66B-2X006 Optocoupler, photodarlington output, with internal rbe Datasheet

IL66B
Vishay Semiconductors
Optocoupler, Photodarlington Output, with Internal RBE
FEATURES
• Internal RBE for high stability
• Isolation test voltage, 5300 VRMS
A 1
6 NC
• No base connection
C 2
5 C
• High isolation resistance
NC 3
4 E
• Standard plastic DIP package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
i179019
AGENCY APPROVALS
DESCRIPTION
The IL66B is an optically coupled isolator employing a
gallium arsenide infrared emitter and a silicon
photodarlington detector. Switching can be accomplished
while maintaining a high degree of isolation between driving
and load circuits. They can be used to replace reed and
mercury relays with advantages of long life, high speed
switching and elimination of magnetic fields.
• UL1577, file no. E52744 system code H or J, double
protection
• BSI IEC 60950 IEC 60065
• CSA 93751
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
available with option 1
• FIMKO
ORDER INFORMATION
PART
REMARKS
IL66B-1
CTR > 200 %, DIP-6
IL66B-2
CTR > 750 %, DIP-6
IL66B-1X006
CTR > 200 %, DIP-6 400 mil (option 6)
IL66B-2X006
CTR > 750 %, DIP-6 400 mil (option 6)
IL66B-2X009
CTR > 750 %, SMD-6 (option 9)
Note
For additional information on the available options refer to option information.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
IF
Pdiss
6.0
60
100
1.33
V
mA
mW
mW/°C
BVCEO
BVECO
Pdiss
60
5.0
200
2.6
V
V
mW
mW/°C
INPUT
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 55 °C
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Power dissipation
Derate linearly from 25 °C
Document Number: 83639
Rev. 1.5, 09-Nov-05
For technical questions, contact: [email protected]
www.vishay.com
1
IL66B
Optocoupler, Photodarlington Output,
with Internal RBE
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
t = 1.0 s
VISO
5300
VRMS
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Ptot
250
3.3
7
mW
mW/°C
min mm
7
min mm
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Tsld
260
°C
Isolation test voltage
Isolation resistance
Total dissipation
Derate linearly
Creepage path
from 25 °C
Clearance path
Solder Temperature (2)
10 s
Notes
(1) T
amb = 25 °C, unless otherwise specified
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 10 mA
VF
1.25
1.5
V
Reverse current
VR = 3.0 V
IR
0.01
100
µA
VR = 0
CO
25
INPUT
Capacitance
pF
OUTPUT
IC = 100 µA
BVCEO
VCE = 50 V, IF = 0 A
ICEO
IC = 10 mA
VCEsat
Collector emitter breakdown voltage
Collector emitter leakage current
60
V
1.0
100
nA
1.0
V
COUPLER
Saturation voltage
Note
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
TEST CONDITION
IF = 2.0 mA, VCE = 5.0 V
PART
SYMBOL
MIN.
IL66B-1
CTR
200
IL66B-2
CTR
750
TYP.
MAX.
UNIT
%
1000
%
SWITCHING CHARACTERISTICS
PARAMETER
Turn-On, Turn-Off time
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2
TEST CONDITION
SYMBOL
VCC = 10 V, IF = 2 mA, RL = 100 Ω
ton, toff
MIN.
TYP.
For technical questions, contact: [email protected]
MAX.
UNIT
200
µs
Document Number: 83639
Rev. 1.5, 09-Nov-05
IL66B
Optocoupler, Photodarlington Output,
with Internal RBE
Vishay Semiconductors
TYPICAL CHARACTERISTICS
10000
1.3
1000
Ice - Collector Emitter
Current (mA)
1.4
TA = - 55 °C
1.2
TA = 25 °C
1.1
1.0
0.9
TA = 100 °C
0.7
0.1
1
10
100
IF - Forward Current (mA)
iil66_01
0.1
0.001
0.1
1
10
100
IF - LED Current (mA)
Fig. 6 - Non-Saturated and Saturated Collector Emitter Current vs.
LED Current
50
2.0
VCE = 5 V
Normalized to:
VCE = 5 V
IF = 2 mA
1.5
1.0
0.5
VCE = 1 V
tpHL - High/Low Propagation
Delay - µs
NCTRce - Normalized (CTRce)
1
iil66b_04
Fig. 3 - Forward Voltage vs. Forward Current
0.0
40
VCC = 5 V
Vth = 1.5 V
10 KΩ
30
20
220 Ω
10
0
0.1
1
100
10
IF - LED Current (mA)
iil66b_02
0
5
10
15
20
IF - LED Current (mA)
iil66b_05
Fig. 4 - Normalized Non-Saturated and Saturated CTRCE vs. LED
Current
NCTRce - Normalized (CTRce)
VCE = 0.4 V
10
0.01
0.8
Fig. 7 - High to low Propagation Delay vs. Collector Load Resistance
and LED Current
150
1.2
Normalized to:
VCE = 5 V
IF = 10 mA
1.0
VCE = 5 V
0.8
0.6
0.4
0.2
VCE = 0.4 V
0.0
10 KΩ
125
100
2 KΩ
75
VCC = 5 V
Vth = 1.5 V
50
25
220 KΩ
0
1
0.1
iil66b_03
VCE = 5 V
100
tpLH - Low/High Propagation
Delay - µs
VF - Forward Voltage (V)
Tamb = 25 °C, unless otherwise specified
10
100
1000
IF - LED Current (mA)
Fig. 5 - Normalized Non-Saturated and Saturated CTRCE vs. LED
Current
Document Number: 83639
Rev. 1.5, 09-Nov-05
0
iil66b_06
5
10
15
20
IF - LED Current (mA)
Fig. 8 - Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
For technical questions, contact: [email protected]
www.vishay.com
3
IL66B
Optocoupler, Photodarlington Output,
with Internal RBE
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
3
2
1
4
5
6
Pin one ID
0.248 (6.30)
0.256 (6.50)
ISO method A
0.335 (8.50)
0.343 (8.70)
0.048
0.039
(1.00)
min.
0.300 (7.62)
(0.45)
typ.
0.022 (0.55)
0.130 (3.30)
0.150 (3.81)
18 °
4°
typ.
0.114 (2.90)
0.031 (0.80) min.
0.031 (0.80)
0.018 (0.45)
0.130 (3.0)
3°to 9°
0.035 (0.90)
0.022 (0.55)
0.100 (2.54) typ.
0.010 (0.25)
typ.
0.300 to 0.347
(7.62 to 8.81)
i178004
Option 6
Option 9
0.375 (9.53)
0.395 (10.03 )
0.407 (10.36)
0.391 (9.96)
0.307(7.8)
0.291(7.4)
0.300 (7.62 )
ref.
0.0040 (0.102)
0.0098 (0.249)
18493
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4
0.014(0.35)
0.010 (0.25)
0.400(10.16)
0.430 (10.92)
0.012 (0.30) typ.
0.020 (0.51)
0.040 (1.02)
0.315 (8.00)
min.
For technical questions, contact: [email protected]
15° max.
Document Number: 83639
Rev. 1.5, 09-Nov-05
IL66B
Optocoupler, Photodarlington Output,
with Internal RBE
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83639
Rev. 1.5, 09-Nov-05
For technical questions, contact: [email protected]
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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