AP65SL190AP
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
VDS @ Tj,max.
▼ Fast Switching Characteristic
RDS(ON)
▼ Simple Drive Requirement
3
ID
G
▼ RoHS Compliant & Halogen-Free
700V
0.19Ω
20A
S
Description
AP65SL190A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-industrial
through hole applications. The low thermal resistance and low
package cost contribute to the worldwide popular package.
G
D
TO-220(P)
S
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
Rating
Units
650
V
+20
V
3
20
A
3
12.3
A
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
48
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
50
V/ns
PD@TC=25℃
Total Power Dissipation
147
W
PD@TA=25℃
Total Power Dissipation
2
W
300
mJ
15
V/ns
4
Single Pulse Avalanche Energy
EAS
5
dv/dt
Peak Diode Recovery dv/dt
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.85
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201506161
AP65SL190AP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
650
-
-
V
VGS=10V, ID=6.2A
-
-
0.19
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=7.5A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=7.5A
-
55
88
nC
Qgs
Gate-Source Charge
VDS=480V
-
14
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
22
-
nC
td(on)
Turn-on Delay Time
VDD=300V
-
17
-
ns
tr
Rise Time
ID=7.5A
-
29
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
49
-
ns
tf
Fall Time
VGS=10V
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=100V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
3
-
pF
Rg
Gate Resistance
f=1.0MHz
-
4.3
8.6
Ω
Min.
Typ.
.
2200 3520
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=6.2A, VGS=0V
-
0.8
-
V
trr
Reverse Recovery Time
IS=20A, VGS=0V
-
420
-
ns
Qrr
Reverse Recovery Charge
dI/dt=50A/µs
-
3.7
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω
5.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP65SL190AP
40
20
o
30
T C =150 C
16
ID , Drain Current (A)
T C =25 C
ID , Drain Current (A)
o
10V
9.0V
8.0V
7.0V
20
V G =6.0V
0.37Ω
12
10V
9.0V
8.0V
7.0V
V G =6.0V
8
10
4
0
0
0
8
16
24
32
0
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
24
32
Fig 2. Typical Output Characteristics
200
4
I D =6.2A
V G =10V
I D =6.2A
o
190
180
.
Normalized RDS(ON)
T C =25 C
RDS(ON) (mΩ)
16
V DS , Drain-to-Source Voltage (V)
3
2
1
170
0
160
4
5
6
7
8
9
-100
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C )
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
I D =250uA
1.6
Normalized VGS(th)
IS (A)
8
6
T j = 150 o C
T j = 25 o C
4
2
1.2
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP65SL190AP
f=1.0MHz
12
10000
I D =7.5A
V DS =480V
C iss
1000
8
6
0.37Ω
100
C (pF)
VGS , Gate to Source Voltage (V)
10
C oss
C rss
10
4
1
2
0
0.1
0
20
40
60
80
0
200
Q G , Total Gate Charge (nC)
400
600
800
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
10
ID (A)
10us
100us
1ms
10ms
1
100ms
DC
o
T C =25 C
Single Pulse
0.1
.
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP65SL190AP
160
2
I D =1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
120
80
40
0.4
0
0
-100
-50
T
0
50
100
150
0
o
j
50
100
150
o
, Junction Temperature ( C)
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
500
T j =25 o C
RDS(ON) (mΩ)
400
300
.
V GS =10V
200
100
0
4
8
12
16
20
24
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP65SL190AP
MARKING INFORMATION
Part Number
65SL190A
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6