TI1 LMV852MMNOPB Lmv851/lmv852/lmv854 8 mhz low power cmos, emi hardened operational amplifier Datasheet

LMV851, LMV852, LMV854
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SNOSAW1 – OCTOBER 2007
LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers
Check for Samples: LMV851, LMV852, LMV854
FEATURES
APPLICATIONS
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Unless otherwise noted, typical values at TA =
25°C, VSUPPLY = 3.3V
Supply voltage 2.7V to 5.5V
Supply current (per channel) 0.4 mA
Input offset voltage 1 mV max
Input bias current 0.1 pA
GBW 8 MHz
EMIRR at 1.8 GHz 87 dB
Input noise voltage at 1 kHz 11 nV/√Hz
Slew rate 4.5 V/µs
Output voltage swing Rail-to-Rail
Output current drive 30 mA
Operating ambient temperature range −40°C to
125°C
Photodiode preamp
Piezoelectric sensors
Portable/battery-powered electronic equipment
Filters/buffers
PDAs/phone accessories
Medical diagnosis equipment
DESCRIPTION
National’s LMV851/LMV852/LMV854 are CMOS input, low power op amp ICs, providing a low input bias current,
a wide temperature range of −40°C to +125°C and exceptional performance, making them robust general
purpose parts. Additionally, the LMV851/LMV852/LMV854 are EMI hardened to minimize any interference so
they are ideal for EMI sensitive applications. The unity gain stable LMV851/LMV852/LMV854 feature 8 MHz of
bandwidth while consuming only 0.4 mA of current per channel. These parts also maintain stability for capacitive
loads as large as 200 pF. The LMV851/LMV852/LMV854 provide superior performance and economy in terms of
power and space usage. This family of parts has a maximum input offset voltage of 1 mV, a rail-to-rail output
stage and an input common-mode voltage range that includes ground. Over an operating supply range from 2.7V
to 5.5V the LMV851/LMV852/LMV854 provide a CMRR of 92 dB, and a PSRR of 93 dB. The
LMV851/LMV852/LMV854 are offered in the space saving 5-Pin SC70 package, the 8-Pin MSOP and the 14-Pin
TSSOP package.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007, Texas Instruments Incorporated
LMV851, LMV852, LMV854
SNOSAW1 – OCTOBER 2007
www.ti.com
Typical Application
V
R1
+
NO RF RELATED
DISTURBANCES
PRESSURE
SENSOR
-
+
+
R2
ADC
+
EMI HARDENED
EMI HARDENED
INTERFERING
RF SOURCES
Figure 1. Sensor Amplifiers Close to RF Sources
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
ESD Tolerance
(1)
(2)
Human Body Model
2 kV
Charge-Device Model
1 kV
Machine Model
200V
VINDifferential
± Supply Voltage
+
−
Supply Voltage (V – V )
6V
Voltage at Input/Output Pins
V+ +0.4V
V− −0.4V
Storage Temperature Range
−65°C to +150°C
Junction Temperature
(3)
+150°C
Soldering Information
Infrared or Convection (20 sec)
(1)
(2)
(3)
2
+260°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics Tables.
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
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Operating Ratings
Temperature Range
(1)
(2)
−40°C to +125°C
Supply Voltage (V – V−)
+
2.7V to 5.5V
Package Thermal Resistance (θJA (2))
5-Pin SC70
313 °C/W
8-Pin MSOP
217 °C/W
14-Pin TSSOP
135 °C/W
(1)
(2)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics Tables.
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
3.3V Electrical Characteristics
(1)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 3.3V, V− = 0V, VCM = V+/2, and RL = 10 kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(2)
Typ
Max
Units
mV
(3)
(2)
VOS
Input Offset Voltage
±0.26
(4)
±1
±1.2
TCVOS
Input Offset Voltage Drift
±0.4
±2
IB
Input Bias Current
0.1
10
500
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
−0.2V < VCM < V+ - 1.2V
76
75
92
PSRR
Power Supply Rejection Ratio
2.7V ≤ V+ ≤ 5.5V,
VOUT = 1V
75
74
93
EMIRR
EMI Rejection Ratio, IN+ and IN−
VRFpeak = 100 mVP (−20 dBVP),
f = 400 MHz
64
VRFpeak = 100 mVP (−20 dBVP),
f = 900 MHz
78
VRFpeak = 100 mVP (−20 dBVP),
f = 1800 MHz
87
VRFpeak = 100 mVP (−20 dBVP),
f = 2400 MHz
90
(5)
(4)
(5)
1
(6)
CMRR ≥ 76 dB
−0.2
AVOL
Large Signal Voltage Gain
RL = 2 kΩ,
VOUT = 0.15V to 1.65V,
VOUT = 3.15V to 1.65V
100
97
114
RL = 10 kΩ,
VOUT = 0.1V to 1.65V,
VOUT = 3.2V to 1.65V
100
97
115
(1)
(2)
(3)
(4)
(5)
(6)
(7)
dB
dB
(4)
Input Common-Mode Voltage Range
pA
pA
(4)
CMVR
(7)
μV/°C
dB
2.1
V
dB
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device.
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using
statistical quality control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
The typical value is calculated by applying absolute value transform to the distribution, then taking the statistical average of the resulting
distribution
This parameter is guaranteed by design and/or characterization and is not tested in production.
The EMI Rejection Ratio is defined as EMIRR = 20log ( VRFpeak/ΔVOS).
The specified limits represent the lower of the measured values for each output range condition.
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3.3V Electrical Characteristics (1) (continued)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 3.3V, V− = 0V, VCM = V+/2, and RL = 10 kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
VO
Parameter
Conditions
Output Swing High,
(measured from V+)
Output Swing Low,
(measured from V−)
IO
Output Short Circuit Current
IS
Supply Current
(8)
Min
Typ
Max
RL = 2 kΩ to V+/2
31
35
43
RL = 10 kΩ to V+/2
7
10
12
RL = 2 kΩ to V+/2
26
32
43
RL = 10 kΩ to V+/2
6
11
14
(2)
(3)
Sourcing, VOUT = VCM,
VIN = 100 mV
25
20
28
Sinking, VOUT = VCM,
VIN = −100 mV
28
20
31
(2)
Units
mV
mV
mA
LMV851
0.42
0.50
0.58
LMV852
0.79
0.90
1.06
LMV854
1.54
1.67
1.99
AV = +1, VOUT = 1 VPP, 10% to 90%
4.5
V/μs
mA
SR
Slew Rate
GBW
Gain Bandwidth Product
8
MHz
Φm
Phase Margin
62
deg
en
Input-Referred Voltage Noise
f = 1 kHz
11
f = 10 kHz
10
in
Input-Referred Current Noise
f = 1 kHz
0.005
ROUT
Closed Loop Output Impedance
f = 6 MHz
400
CIN
Common-Mode Input Capacitance
11
Differential-Mode Input Capacitance
6
THD+N
(8)
4
Total Harmonic Distortion + Noise
f = 1 kHz, AV = 1, BW = >500 kHz
0.006
nV/
pA/
Ω
pF
%
Number specified is the slower of positive and negative slew rates.
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5V Electrical Characteristics
(1)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, and RL = 10 kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(2)
Typ
Max
Units
mV
(3)
(2)
VOS
Input Offset Voltage
±0.26
(4)
±1
±1.2
TCVOS
Input Offset Voltage Drift
±0.4
±2
IB
Input Bias Current
0.1
10
500
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
(5)
(4)
(5)
1
−0.2V ≤ VCM ≤ V+ −1.2V
+
77
76
94
75
74
93
Power Supply Rejection Ratio
2.7V ≤ V ≤ 5.5V,
VOUT = 1V
EMIRR
EMI Rejection Ratio, IN+ and IN−
VRFpeak = 100 mVP (−20 dBVP),
f = 400 MHz
64
VRFpeak = 100 mVP (−20 dBVP),
f = 900 MHz
76
VRFpeak = 100 mVP (−20 dBVP),
f = 1800 MHz
84
VRFpeak = 100 mVP (−20 dBVP),
f = 2400 MHz
89
(6)
Input Common-Mode Voltage Range
CMRR ≥ 77 dB
−0.2
AVOL
Large Signal Voltage Gain
RL = 2 kΩ,
VOUT = 0.15V to 2.5V,
VOUT = 4.85V to 2.5V
105
102
118
RL = 10 kΩ,
VOUT = 0.1V to 2.5V,
VOUT = 4.9V to 2.5V
105
102
120
VO
Output Swing High,
(measured from V+)
Output Swing Low,
(measured from V−)
IO
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Output Short Circuit Current
dB
dB
(4)
CMVR
dB
3.8
34
39
47
RL = 10 kΩ to V+/2
7
11
13
RL = 2 kΩ to V+/2
31
38
50
RL = 10 kΩ to V+/2
7
12
15
60
48
65
Sinking, VOUT = VCM,
VIN = −100 mV
58
44
62
V
dB
RL = 2 kΩ to V+/2
Sourcing, VOUT = VCM,
VIN = 100 mV
pA
pA
(4)
PSRR
(7)
μV/°C
mV
mV
mA
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device.
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using
statistical quality control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
The typical value is calculated by applying absolute value transform to the distribution, then taking the statistical average of the resulting
distribution
This parameter is guaranteed by design and/or characterization and is not tested in production.
The EMI Rejection Ratio is defined as EMIRR = 20log ( VRFpeak/ΔVOS).
The specified limits represent the lower of the measured values for each output range condition.
Submit Documentation Feedback
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Product Folder Links: LMV851 LMV852 LMV854
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5V Electrical Characteristics (1) (continued)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, and RL = 10 kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
IS
Parameter
Conditions
Supply Current
(8)
SR
Slew Rate
GBW
Gain Bandwidth Product
Φm
Phase Margin
en
Input-Referred Voltage Noise
Min
Typ
Max
LMV851
0.43
0.52
0.60
LMV852
0.82
0.93
1.09
LMV854
1.59
1.73
2.05
AV = +1, VOUT = 2 VPP, 10% to 90%
4.5
V/μs
8
MHz
64
deg
(2)
(3)
f = 1 kHz
11
f = 10 kHz
10
in
Input-Referred Current Noise
f = 1 kHz
0.005
ROUT
Closed Loop Output Impedance
f = 6 MHz
400
CIN
Common-Mode Input Capacitance
11
Differential-Mode Input Capacitance
6
THD+N
(8)
Total Harmonic Distortion + Noise
f = 1 kHz, AV = 1, BW = >500 kHz
(2)
0.003
Units
mA
nV/
pA/
Ω
pF
%
Number specified is the slower of positive and negative slew rates.
Connection Diagram
Figure 2. 5-Pin SC70 (Top View)
Figure 3. 8-Pin MSOP (Top View)
Figure 4. 14-Pin TSSOP (Top View)
6
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Typical Performance Characteristics
At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified.
VOS
vs.
VCM at 3.3V
VOS
vs.
VCM at 5.0V
0.3
0.3
125°C
85°C
125°C
85°C
0.2
0.1
0.1
VOS mV)
VOS (mV)
0.2
0
25°C -40°C
-0.1
-0.2
0
25°C
-0.1
-40°C
-0.2
-0.3
-0.3
VS = 5.0V
VS = 3.3V
-0.5 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-0.5
0.5
1.5
VCM (V)
2.5
3.5
4.5
5.5
100
125
VCM (V)
VOS
vs.
Supply Voltage
VOS
vs.
Temperature
0.3
85°C
125°C
0.1
VOS (µV)
VOS (mV)
0.2
0
-40°C
-0.1
25°C
-0.2
200
150
100
50
0
-50
-100
-150
-200
3.3V
5.0V
-0.3
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-50
-25
VOS
vs.
VOUT
12
0
25
50
Input Bias Current
vs.
VCM at 25°C
VS = 5.0V, RL = 2k
TA = 25°C
9
6
3
IBIAS (pA)
VOS (µV)
75
TEMPERATURE (°C)
VSUPPLY (V)
0
-3
-6
5
4
3
2
1
0
-1
-2
-3
-4
-5
5V
3.3V
-9
-12
0
1
2
3
4
5
-1
0
1
2
3
4
5
6
VCM (V)
VOUT (V)
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Typical Performance Characteristics (continued)
At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified.
Input Bias Current
vs.
VCM at 85°C
Input Bias Current
vs.
VCM at 125°C
TA = 125°C
50
40
30
20
10
0
-10
-20
-30
-40
-50
IBIAS (pA)
IBIAS (pA)
TA = 85°C
5.0V
3.3V
500
400
300
200
100
0
-100
-200
-300
-400
-500
5.0V
3.3V
-1
0
1
2
3
4
5
6
-1
0
1
2
3
4
5
6
VCM (V)
VCM (V)
Supply Current
vs.
Supply Voltage Single LMV851
Supply Current
vs.
Supply Voltage Dual LMV852
85°C
125°C
0.6
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
0.7
0.5
0.4
25°C
0.3
-40°C
0.2
2.5
3.0
3.5
4.0
4.5
5.0
5.5
125°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
6.0
25°C
-40°C
2.5
3.0
Supply Current
vs.
Supply Voltage Quad LMV854
SUPPLY CURRENT (mA)
4.0
4.5
5.0
5.5
6.0
Supply Current
vs.
Temperature Single LMV851
0.7
85°C
SUPPLY CURRENT (mA)
125°C
3.5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
2.2
85°C
2.0
1.8
1.6
1.4
25°C
1.2
1.0
-40°C
0.8
0.6
5.0V
0.5
0.4
3.3V
0.3
0.2
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-50
-25
SUPPLY VOLTAGE (V)
8
0
25
50
75
100
125
TEMPERATURE (°C)
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Typical Performance Characteristics (continued)
At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified.
Supply Current
vs.
Temperature Dual LMV852
Supply Current
vs.
Temperature Quad LMV854
2.2
1.0
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
1.2
5.0V
0.8
3.3V
0.6
2.0
5.0V
1.8
1.6
1.4
3.3V
1.2
1.0
0.8
0.4
-50
-25
0
25
50
75
TEMPERATURE (°C)
100
125
-50
-25
-40°C
25°C
125°C
85°C
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
100
90
80
70
60
50
40
30
20
10
125°C
3.0
VOUT FROM RAIL HIGH (mV)
VOUT FROM RAIL HIGH (mV)
25°C
-40°C
4.5
5.0
4.5
5.0
5.5
6.0
RL = 10 k:
30
4.0
4.0
14
35
3.5
3.5
Output Swing High
vs.
Supply Voltage RL = 10 kΩ
125°C
85°C
3.0
125
SUPPLY VOLTAGE (V)
40
20
2.5
100
85°C
2.5
50
25
75
25°C
Output Swing High
vs.
Supply Voltage RL = 2 kΩ
45
50
-40°C
SUPPLY VOLTAGE (V)
RL = 2 k:
25
Sourcing Current
vs.
Supply Voltage
ISOURCE (mA)
ISINK (mA)
Sinking Current
vs.
Supply Voltage
100
90
80
70
60
50
40
30
20
10
0
TEMPERATURE (°C)
5.5
6.0
12
125°C
85°C
10
8
6
25°C
-40°C
4
2
2.5
3.0
SUPPLY VOLTAGE (V)
3.5
4.0
4.5
5.0
5.5
6.0
SUPPLY VOLTAGE (V)
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Typical Performance Characteristics (continued)
At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified.
Output Swing Low
vs.
Supply Voltage RL = 2 kΩ
Output Swing Low
vs.
Supply Voltage RL = 10 kΩ
12
45
RL = 10 k:
125°C
40
VOUT FROM RAIL LOW (mV)
85°C
35
30
25
25°C
20
-40°C
15
10
2.5
3.0
3.5
4.0
5.0
4.5
5.5
125°C
10
85°C
8
6
4
25°C
-40°C
2
0
2.5
6.0
3.0
3.5
Output Voltage Swing
vs.
Load Current at 3.3V
-40°C
VOUT FROM RAIL (V)
VOUT FROM RAIL (V)
125°C
VS = 3.3V
SOURCE
10
15
20
25
30
35
40
0
10
20
Open Loop Frequency Response
vs.
Temperature
PHASE
60
60
100
50
60
70
30
40
20
20
25°C
85°C 0
125°C
-20
10
0
CL = 5 pF
-40°C
1M
10M
100 pF
40
GAIN (dB)
60
20 pF 5 pF
80
GAIN
-40°C
40
100
PHASE
50
80
GAIN
PHASE (°)
GAIN (dB)
40
Open Loop Frequency Response
vs.
Load Conditions
25°C, 85°C, 125°C
100k
30
ILOAD (mA)
ILOAD (mA)
60
50 pF
30
40
20
20
CL = 5 pF
= 20 pF
10
= 50 pF
= 100 pF
0
10k
100k
FREQUENCY (Hz)
10
VS = 5.0V
-40°C
125°C
SOURCE
10k
6.0
5.5
125°C
2.0
1.6
1.2
0.8
0.4
0
-0.4
-0.8
-1.2
-1.6
-2.0
125°C
50
5.0
SINK
2.0
1.6
1.2
0.8
0.4
0
-0.4
-0.8
-1.2
-1.6
-2.0
5
4.5
Output Voltage Swing
vs.
Load Current at 5.0V
SINK
0
4.0
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
5 pF
PHASE (°)
VOUT FROM RAIL LOW (mV)
RL = 2 k:
0
100 pF
1M
-20
10M
FREQUENCY (Hz)
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Typical Performance Characteristics (continued)
At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified.
Phase Margin
vs.
Capacitive Load
PSRR
vs.
Frequency
70
120
60
100
3.3V
50
5.0V
PSRR (dB)
PHASE(°)
80
40
30
5.0V
-PSRR
60
3.3V
5.0V
40
20
+PSRR
20
10
3.3V
0
1
10
100
0
100
1000
1k
10k
CLOAD (pF)
CMRR
vs.
Frequency
CHANNEL SEPARATION (dB)
CMRR (dB)
60
40
1k
120
100
80
60
VS = 3.3V, 5.0V
100
10M
140
DC CMRR
80
20
1M
Channel Separation
vs.
Frequency
AC CMRR
100
100k
FREQUENCY (Hz)
10k
100k
FREQUENCY (Hz)
1M
10M
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Large Signal Step Response with Gain = 10
200 mV/DIV
Large Signal Step Response with Gain = 1
200 mV/DIV
VS = 3.3V, 5.0V
f = 250 kHz
f = 250 kHz
AV = +1
AV = +10
VIN = 1 VPP
VIN = 100 mVPP
400 ns/DIV
400 ns/DIV
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Typical Performance Characteristics (continued)
At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified.
20 mV/DIV
Small Signal Step Response with Gain = 10
20 mV/DIV
Small Signal Step Response with Gain = 1
f = 250 kHz
f = 250 kHz
AV = +1
AV = +10
VIN = 100 mVPP
VIN = 10 mVPP
400 ns/DIV
400 ns/DIV
Slew Rate
vs.
Supply Voltage
Overshoot
vs.
Capacitive Load
40
4.8
4.6
4.4
f = 250 kHz
35 AV = +1
VIN =200 mVPP
30
FALLING EDGE
OVERSHOOT (%)
SLEWRATE (V/µs)
5.0
RISING EDGE
4.2
25
20
5.0V
15
10
4.0 AV = +1
5
3.3V
CL = 5 pF
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
10
6.0
100
1000
SUPPLY VOLTAGE (Hz)
CLOAD (pF)
Input Voltage Noise
vs.
Frequency
THD+N
vs.
Frequency
1
100
BW = >500 kHz
THD + N (%)
NOISE (nV/vHz)
AV = 10x
10
VS = 3.3V, VIN = 220 mVPP
VS = 5.0V, VIN = 400 mVPP
AV = 1x
0.01 VS = 3.3V, VIN = 2.2VPP
VS = 5.0V, VIN = 4.0VPP
1 VS = 3.3V, 5.0V
10
12
0.1
100
1k
10k
100k
FREQUENCY (Hz)
1M
0.001
10
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100
1k
10k
100k
FREQUENCY (Hz)
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Typical Performance Characteristics (continued)
At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified.
THD+N
vs.
Amplitude
ROUT
vs.
Frequency
1k
10
AV = 10x
AV = 100x
ROUT (:)
THD + N (%)
100
VS = 3.3V
1
AV = 1x
0.1
10
1
AV = 10x
0.01
0.1
f = 1 kHz
BW = >500 kHz
0.001
1m
10m
100m
AV = 1x
VS = 5.0V
1
0.01
100
10
1k
10k
100k
1M
10M
FREQUENCY (Hz)
VOUT (VPP)
EMIRR IN+
vs.
Power at 400 MHz
EMIRR IN+
vs.
Power at 900 MHz
100
100
90
90
125°C
EMIRR V_PEAK (dB)
EMIRR V_PEAK (dB)
85°C
125°C
85°C
80
70
60
25°C
50
-40°C
40
80
70
60
25°C
-40°C
50
40
30
30
fRF = 400 MHz
20
-40
-30
-20
-10
0
fRF = 900 MHz
20
-40
-30
-20
10
RF INPUT PEAK VOLTAGE (dBVp)
EMIRR IN+
vs.
Power at 1800 MHz
100
125°C
85°C
EMIRR V_PEAK (dB)
EMIRR V_PEAK (dB)
10
125°C
85°C
90
80
70
25°C
-40°C
60
0
EMIRR IN+
vs.
Power at 2400 MHz
100
90
-10
RF INPUT PEAK VOLTAGE (dBVp)
50
40
80
70
25°C
-40°C
60
50
40
30
30
fRF = 1800 MHz
20
-40
-30
-20
-10
0
10
RF INPUT PEAK VOLTAGE (dBVp)
fRF = 2400 MHz
20
-40
-30
-20
-10
0
10
RF INPUT PEAK VOLTAGE (dBVp)
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Typical Performance Characteristics (continued)
At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified.
EMIRR IN+
vs.
Frequency at 5.0V
100
100
90
90
125°C
80
EMIRR V_PEAK (dB)
EMIRR V_PEAK (dB)
EMIRR IN+
vs.
Frequency at 3.3V
85°C
70
60
50
25°C
40
20
10
VS = 3.3V
VPEAK = -20 dBVp
100
85°C
70
60
50
25°C
40
-40°C
30
125°C
80
1000
10000
-40°C
30
20
10
FREQUENCY (MHz)
VS = 5.0V
VPEAK = -20 dBVp
100
1000
10000
FREQUENCY (MHz)
Application Information
INTRODUCTION
The LMV851/LMV852/LMV854 are operational amplifiers with very good specifications, such as low offset, low
noise and a rail-to-rail output. These specifications make the LMV851/LMV852/LMV854 great choices to use in
areas such as medical and instrumentation. The low supply current is perfect for battery powered equipment.
The small packages, SC-70 package for the LMV851, the MSOP package for the dual LMV852 and the TSSOP
package for the quad LMV854, make any of these parts a perfect choice for portable electronics. Additionally, the
EMI hardening makes the LMV851/LMV852 or LMV854 a must for almost all op amp applications. Most
applications are exposed to Radio Frequency (RF) signals such as the signals transmitted by mobile phones or
wireless computer peripherals. The LMV851/LMV852/LMV854 will effectively reduce disturbances caused by RF
signals to a level that will be hardly noticeable. This again reduces the need for additional filtering and shielding.
Using this EMI resistant series of op amps will thus reduce the number of components and space needed for
applications that are affected by EMI, and will help applications, not yet identified as possible EMI sensitive, to be
more robust for EMI.
INPUT CHARACTERISTICS
The input common mode voltage range of the LMV851/LMV852/LMV854 includes ground, and can even sense
well below ground. The CMRR level does not degrade for input levels up to 1.2V below the supply voltage. For a
supply voltage of 5V, the maximum voltage that should be applied to the input for best CMRR performance is
thus 3.8V.
When not configured as unity gain, this input limitation will usually not degrade the effective signal range. The
output is rail-to-rail and therefore will introduce no limitations to the signal range.
The typical offset is only 0.26 mV, and the TCVOS is 0.4 μV/°C, specifications close to precision op amps.
CMRR MEASUREMENT
The CMRR measurement results may need some clarification. This is because different setups are used to
measure the AC CMRR and the DC CMRR.
The DC CMRR is derived from ΔVOS versus ΔVCM. This value is stated in the tables, and is tested during
production testing.
The AC CMRR is measured with the test circuit shown in Figure 5.
14
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R2
1 k:
V+ BUFFER
V+
R1
1 k:
-
-
VIN
Buffer
+
R11
1 k:
VOUT
+
LMV85x
V- BUFFER
-
R2 V
995:
P1
10:
Figure 5. AC CMRR Measurement Setup
The configuration is largely the usually applied balanced configuration. With potentiometer P1, the balance can
be tuned to compensate for the DC offset in the DUT. The main difference is the addition of the buffer. This
buffer prevents the open-loop output impedance of the DUT from affecting the balance of the feedback network.
Now the closed-loop output impedance of the buffer is a part of the balance. But as the closed-loop output
impedance is much lower, and by careful selection of the buffer also has a larger bandwidth, the total effect is
that the CMRR of the DUT can be measured much more accurately. The differences are apparent in the larger
measured bandwidth of the AC CMRR.
One artifact from this test circuit is that the low frequency CMRR results appear higher than expected. This is
because in the AC CMRR test circuit the potentiometer is used to compensate for the DC mismatches. So,
mainly AC mismatch is all that remains. Therefore, the obtained DC CMRR from this AC CMRR test circuit tends
to be higher than the actual DC CMRR based on DC measurements.
The CMRR curve in Figure 6 shows a combination of the AC CMRR and the DC CMRR.
AC CMRR
100
DC CMRR
CMRR (dB)
80
60
40
20
VS = 3.3V, 5.0V
100
1k
10k
100k
FREQUENCY (Hz)
1M
10M
Figure 6. CMRR Curve
OUTPUT CHARACTERISTICS
As already mentioned the output is rail to rail. When loading the output with a 10 kΩ resistor the maximum swing
of the output is typically 7 mV from the positive and negative rail
The LMV851/LMV852/LMV854 can be connected as non-inverting unity gain amplifiers. This configuration is the
most sensitive to capacitive loading. The combination of a capacitive load placed at the output of an amplifier
along with the amplifier’s output impedance creates a phase lag, which reduces the phase margin of the
amplifier. If the phase margin is significantly reduced, the response will be under damped which causes peaking
in the transfer and, when there is too much peaking, the op amp might start oscillating. The
LMV851/LMV852/LMV854 can directly drive capacitive loads up to 200 pF without any stability issues. In order to
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drive heavier capacitive loads, an isolation resistor, RISO, should be used, as shown in Figure 7. By using this
isolation resistor, the capacitive load is isolated from the amplifier’s output, and hence, the pole caused by CL is
no longer in the feedback loop. The larger the value of RISO, the more stable the amplifier will be. If the value of
RISO is sufficiently large, the feedback loop will be stable, independent of the value of CL. However, larger values
of RISO result in reduced output swing and reduced output current drive.
VIN
RISO
VOUT
+
CL
Figure 7. Isolating Capacitive Load
EMIRR
With the increase of RF transmitting devices in the world, the electromagnetic interference (EMI) between those
devices and other equipment becomes a bigger challenge. The LMV851/LMV852/LMV854 are EMI hardened op
amps which are specifically designed to overcome electromagnetic interference. Along with EMI hardened op
amps, the EMIRR parameter is introduced to unambiguously specify the EMI performance of an op amp. This
section presents an overview of EMIRR. A detailed description on this specification for EMI hardened op amps
can be found in Application Note AN-1698.
The dimensions of an op amp IC are relatively small compared to the wavelength of the disturbing RF signals. As
a result the op amp itself will hardly receive any disturbances. The RF signals interfering with the op amp are
dominantly received by the PCB and wiring connected to the op amp. As a result the RF signals on the pins of
the op amp can be represented by voltages and currents. This representation significantly simplifies the
unambiguous measurement and specification of the EMI performance of an op amp.
RF signals interfere with op amps via the non-linearity of the op amp circuitry. This non-linearity results in the
detection of the so called out-of-band signals. The obtained effect is that the amplitude modulation of the out-ofband signal is down-converted into the base band. This base band can easily overlap with the band of the op
amp circuit. As an example Figure 8 depicts a typical output signal of a unity-gain connected op amp in the
presence of an interfering RF signal. Clearly the output voltage varies in the rhythm of the on-off keying of the RF
carrier.
RF
RF SIGNAL
VOUT OPAMP
(AV = 1)
NO RF
VOS + VDETECTED
VOS
Figure 8. Offset Voltage Variation Due to an Interfering RF Signal
EMIRR Definition
To identify EMI hardened op amps, a parameter is needed that quantitatively describes the EMI performance of
op amps. A quantitative measure enables the comparison and the ranking of op amps on their EMI robustness.
Therefore the EMI Rejection Ratio (EMIRR) is introduced. This parameter describes the resulting input-referred
offset voltage shift of an op amp as a result of an applied RF carrier (interference) with a certain frequency and
level. The definition of EMIRR is given by:
§ VRF_PEAK·
¸
EMIRRV RF_PEAK = 20 log ¨
¨ 'VOS ¸
©
¹
16
(1)
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In which VRF_PEAK is the amplitude of the applied un-modulated RF signal (V) and ΔVOS is the resulting inputreferred offset voltage shift (V). The offset voltage depends quadratically on the applied RF level, and therefore,
the RF level at which the EMIRR is determined should be specified. The standard level for the RF signal is 100
mVP. Application Note AN-1698 addresses the conversion of an EMIRR measured for an other signal level than
100 mVP. The interpretation of the EMIRR parameter is straightforward. When two op amps have an EMIRR
which differ by 20 dB, the resulting error signals when used in identical configurations, differs by 20 dB as well.
So, the higher the EMIRR, the more robust the op amp.
Coupling an RF Signal to the IN+ Pin
Each of the op amp pins can be tested separately on EMIRR. In this section the measurements on the IN+ pin
(which, based on symmetry considerations, also apply to the IN− pin) are discussed. In Application Note AN1698 the other pins of the op amp are treated as well. For testing the IN+ pin the op amp is connected in the
unity gain configuration. Applying the RF signal is straightforward as it can be connected directly to the IN+ pin.
As a result the RF signal path has a minimum of components that might affect the RF signal level at the pin. The
circuit diagram is shown in Figure 9. The PCB trace from RFIN to the IN+ pin should be a 50Ω stripline in order to
match the RF impedance of the cabling and the RF generator. On the PCB a 50Ω termination is used. This 50Ω
resistor is also used to set the bias level of the IN+ pin to ground level. For determining the EMIRR, two
measurements are needed: one is measuring the DC output level when the RF signal is off; and the other is
measuring the DC output level when the RF signal is switched on. The difference of the two DC levels is the
output voltage shift as a result of the RF signal. As the op amp is in the unity gain configuration, the input
referred offset voltage shift corresponds one-to-one to the measured output voltage shift.
C2
10 µF
+
VDD
C3
100 pF
RFin
+
R1
50:
Out
C4
100 pF
C1
22 pF
+
VSS
C5
10 µF
Figure 9. Circuit for Coupling the RF Signal to IN+
Cell Phone Call
The effect of electromagnetic interference is demonstrated in a setup where a cell phone interferes with a
pressure sensor application (Figure 11). This application needs two op amps and therefore a dual op amp is
used. The experiment is performed on two different dual op amps: a typical standard op amp and the LMV852,
EMI hardened dual op amp. The op amps are placed in a single supply configuration. The cell phone is placed
on a fixed position a couple of centimeters from the op amps.
When the cell phone is called, the PCB and wiring connected to the op amps receive the RF signal.
Subsequently, the op amps detect the RF voltages and currents that end up at their pins. The resulting effect on
the output of the second op amp is shown in Figure 10.
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VOUT (0.5V/DIV)
SNOSAW1 – OCTOBER 2007
Typical Opamp
LMV852
TIME (0.5s/DIV)
Figure 10. Comparing EMI Robustness
The difference between the two types of dual op amps is clearly visible. The typical standard dual op amp has an
output shift (disturbed signal) larger than 1V as a result of the RF signal transmitted by the cell phone. The
LMV852, EMI hardened op amp does not show any significant disturbances.
DECOUPLING AND LAYOUT
Care must be given when creating a board layout for the op amp. For decoupling the supply lines it is suggested
that 10 nF capacitors be placed as close as possible to the op amp. For single supply, place a capacitor between
V+ and V−. For dual supplies, place one capacitor between V+ and the board ground, and a second capacitor
between ground and V−. Even with the LMV851/LMV852/LMV854 inherent hardening against EMI, it is still
recommended to keep the input traces short and as far as possible from RF sources. Then the RF signals
entering the chip are as low as possible, and the remaining EMI can be, almost, completely eliminated in the chip
by the EMI reducing features of the LMV851/LMV852/LMV854.
PRESSURE SENSOR APPLICATION
The LMV851/LMV852/LMV854 can be used for pressure sensor applications. Because of their low power the
LMV851/LMV852/LMV854 are ideal for portable applications, such as blood pressure measurement devices, or
portable barometers. This example describes a universal pressure sensor that can be used as a starting point for
different types of sensors and applications.
Pressure Sensor Characteristics
The pressure sensor used in this example functions as a Wheatstone bridge. The value of the resistors in the
bridge change when pressure is applied to the sensor. This change of the resistor values will result in a
differential output voltage, depending on the sensitivity of the sensor and the applied pressure. The difference
between the output at full scale pressure and the output at zero pressure is defined as the span of the pressure
sensor. A typical value for the span is 100 mV. A typical value for the resistors in the bridge is 5 kΩ. Loading of
the resistor bridge could result in incorrect output voltages of the sensor. Therefore the selection of the circuit
configuration, which connects to the sensor, should take into account a minimum loading of the sensor.
Pressure Sensor Example
The configuration shown in Figure 11 is simple, and is very useful for the read out of pressure sensors. With two
op amps in this application, the dual LMV852 fits very well.
The op amp configured as a buffer and connected at the negative output of the pressure sensor prevents the
loading of the bridge by resistor R2. The buffer also prevents the resistors of the sensor from affecting the gain of
the following gain stage. Given the differential output voltage VS of the pressure sensor, the output signal of this
op amp configuration, VOUT, equals:
VOUT =
18
VDD
2
-
VS §
R1 ·
¸
¨1 + 2 ×
R2 ¹
2 ©
(2)
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To align the pressure range with the full range of an ADC, the power supply voltage and the span of the pressure
sensor are needed. For this example a power supply of 5V is used and the span of the sensor is 100 mV.
When a 100Ω resistor is used for R2, and a 2.4 kΩ resistor is used for R1, the maximum voltage at the output is
4.95V and the minimum voltage is 0.05V. This signal is covering almost the full input range of the ADC. Further
processing can take place in the microprocessor following the ADC.
R1
2.4 k:
VDD
VDD
PRESSURE
SENSOR
LMV852
-
+
+
R2
100:
ADC
LMV852
+
VOUT
VS
Figure 11. Pressure Sensor Application
THERMOCOUPLE AMPLIFIER
The following circuit is a typical example for a thermocouple amplifier application using an LMV851/LMV852, or
LMV854. A thermocouple converts a temperature into a voltage. This signal is then amplified by the
LMV851/LMV852, or LMV854. An ADC can convert the amplified signal to a digital signal. For further processing
the digital signal can be processed by a microprocessor and used to display or log the temperature. The
temperature data can for instance be used in a fabrication process.
Characteristics of a Thermocouple
A thermocouple is a junction of two different metals. These metals produce a small voltage that increases with
temperature.
The thermocouple used in this application is a K-type thermocouple. A K-type thermocouple is a junction
between Nickel-Chromium and Nickel-Aluminum. This is one of the most commonly used thermocouples. There
are several reasons for using the K-type thermocouple, these include: temperature range, the linearity, the
sensitivity, and the cost.
A K-type thermocouple has a wide temperature range. The range of this thermocouple is from approximately
−200°C to approximately 1200°C, as can be seen in Figure 12. This covers the generally used temperature
ranges.
Over the main part of the temperature range the output voltage depends linearly on the temperature. This is
important for easily converting the measured signal levels to a temperature reading.
The K-type thermocouple has good sensitivity when compared to many other types; the sensitivity is about 41
uV/°C. Lower sensitivity requires more gain and makes the application more sensitive to noise.
In addition, a K-type thermocouple is not expensive, many other thermocouples consist of more expensive
materials or are more difficult to produce.
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THERMOCOUPLE VOLTAGE (mV)
50
40
30
20
10
0
-10
-200
0
200
400
600
800 1000 1200
TEMPERATURE (°C)
Figure 12. K-Type Thermocouple Response
Thermocouple Example
For this example, suppose the range of interest is 0°C to 500°C, and the resolution needed is 0.5°C. The power
supply for both the LMV851/LMV852, or LMV854 and the ADC is 3.3V.
The temperature range of 0°C to 500°C results in a voltage range from 0 mV to 20.6 mV produced by the
thermocouple. This is indicated in Figure 12 by the dotted lines.
To obtain the highest resolution, the full ADC range of 0 to 3.3V is used. The gain needed for the full range can
be calculated as follows:
AV = 3.3V / 0.0206V = 160
(3)
If RG is 2 kΩ, then the value for RF can be calculated for a gain of 160. Since AV = RF / RG, RF can be calculated
as follows:
RF = AV x RG = 160 x 2 kΩ = 320 kΩ
(4)
To get a resolution of 0.5°C, the LSB of the ADC should be smaller then 0.5°C / 500°C = 1/1000. A 10-bit ADC
would be sufficient as this gives 1024 steps. A 10-bit ADC such as the two channel 10-bit ADC102S021 can be
used.
Unwanted Thermocouple Effect
At the point where the thermocouple wires are connected to the circuit, usually copper wires or traces, an
unwanted thermocouple effect will occur.
At this connection, this could be the connector on a PCB, the thermocouple wiring forms a second thermocouple
with the connector. This second thermocouple disturbs the measurements from the intended thermocouple.
Using an isothermal block as a reference enables correction for this unwanted thermocouple effect. An
isothermal block is a good heat conductor. This means that the two thermocouple connections both have the
same temperature. The temperature of the isothermal block can be measured, and thereby the temperature of
the thermocouple connections. This is usually called the cold junction reference temperature.
In the example, an LM35 is used to measure this temperature. This semiconductor temperature sensor can
accurately measure temperatures from −55°C to 150°C.
The two channel ADC in this example also converts the signal from the LM35 to a digital signal. Now the
microprocessor can compensate the amplified thermocouple signal, for the unwanted thermocouple effect.
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Cold Junction Temperature
RG
LM35
RF
T
Metal A
Copper
Metal B
Thermocouple
-
RG
LMV851
+
Copper
Amplified
Thermocouple
Output
RF
Cold Junction Reference
Figure 13. Thermocouple Read Out Circuit
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PACKAGE OPTION ADDENDUM
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17-Nov-2012
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package Qty
Drawing
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Samples
(3)
(Requires Login)
LMV851MG/NOPB
ACTIVE
SC70
DCK
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV851MGE/NOPB
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV851MGX/NOPB
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV852MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV852MME/NOPB
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV852MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV854MT/NOPB
ACTIVE
TSSOP
PW
14
94
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV854MTX/NOPB
ACTIVE
TSSOP
PW
14
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
17-Nov-2012
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Nov-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
LMV851MG/NOPB
SC70
DCK
5
LMV851MGE/NOPB
SC70
DCK
LMV851MGX/NOPB
SC70
DCK
LMV852MM/NOPB
VSSOP
LMV852MME/NOPB
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
1000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
5
250
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
5
3000
178.0
8.4
2.25
2.45
1.2
4.0
8.0
Q3
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
VSSOP
DGK
8
250
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMV852MMX/NOPB
VSSOP
DGK
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMV854MTX/NOPB
TSSOP
PW
14
2500
330.0
12.4
6.95
8.3
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Nov-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMV851MG/NOPB
SC70
DCK
5
1000
203.0
190.0
41.0
LMV851MGE/NOPB
SC70
DCK
5
250
203.0
190.0
41.0
LMV851MGX/NOPB
SC70
DCK
5
3000
206.0
191.0
90.0
LMV852MM/NOPB
VSSOP
DGK
8
1000
203.0
190.0
41.0
LMV852MME/NOPB
VSSOP
DGK
8
250
203.0
190.0
41.0
LMV852MMX/NOPB
VSSOP
DGK
8
3500
349.0
337.0
45.0
LMV854MTX/NOPB
TSSOP
PW
14
2500
349.0
337.0
45.0
Pack Materials-Page 2
IMPORTANT NOTICE
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changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
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