NTD20N06, NTDV20N06 Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower RDS(on) Lower VDS(on) Lower Capacitances Lower Total Gate Charge Lower and Tighter VSD Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge AEC Q101 Qualified − NTDV20N06 These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX 60 V 37.5 mW 20 A N−Channel D Typical Applications • • • • G Power Supplies Converters Power Motor Controls Bridge Circuits S MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 MW) VDGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 18.4 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 4 Drain 4 Vdc VGS VGS "20 "30 1 2 Adc ID ID 20 10 60 Apk PD 60 0.40 1.88 1.36 W W/°C W W TJ, Tstg −55 to 175 °C EAS 170 mJ IDM DPAK CASE 369C STYLE 2 YWW 20N06G • • • • • • • • • 3 2 1 3 Drain Gate Source 20N06 Y WW G = Device Code = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. RqJC RqJA RqJA 2.5 80 110 TL 260 °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size. © Semiconductor Components Industries, LLC, 2011 August, 2011 − Rev. 8 1 Publication Order Number: NTD20N06/D NTD20N06, NTDV20N06 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Min Typ Max Unit 60 − 71.7 79.4 − − − − − − 1.0 10 − − ±100 2.0 − 2.91 6.9 4.0 − − 37.5 46 − − 0.78 1.57 1.10 − gFS − 13.2 − mhos pF OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 Vdc, ID = 10 Adc) RDS(on) Static Drain−to−Source On−Voltage (Note 3) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 6.0 Adc) Vdc mV/°C mW Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Transfer Capacitance Ciss − 725 1015 Coss − 213 300 Crss − 58 120 td(on) − 9.5 20 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 20 Adc, VGS = 10 Vdc, RG = 9.1 W) (Note 3) Fall Time Gate Charge (VDS = 48 Vdc, ID = 20 Adc, VGS = 10 Vdc) (Note 3) tr − 60.5 120 td(off) − 27.1 60 ns tf − 37.1 80 QT − 21.2 30 Q1 − 5.6 − Q2 − 7.3 − VSD − − 1.0 0.87 1.2 − Vdc trr − 42.9 − ns ta − 33 − tb − 9.9 − QRR − 0.084 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Reverse Recovery Time (IS = 20 Adc, VGS = 0 Vdc) (Note 3) (IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C) (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge mC 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Package Shipping† NTD20N06T4G DPAK (Pb−Free) 2500 / Tape & Reel NTDV20N06T4G DPAK (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD20N06, NTDV20N06 40 7V 6.5 V VDS ≥ 10 V 9V 32 8V 6V 24 5.5 V 16 5V 8 4.5 V 0 0.065 1 3 2 4 5 TJ = 100°C 3.4 TJ = −55°C 5 4.2 5.8 6.6 Figure 2. Transfer Characteristics VGS = 10 V 0.035 TJ = 25°C 0.025 TJ = −55°C 0 8 16 40 32 24 7.4 0.065 VGS = 15 V 0.055 TJ = 100°C 0.045 TJ = 25°C 0.035 0.025 0.015 TJ = −55°C 0 8 16 24 32 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 10000 ID = 10 A VGS = 10 V 1.6 1.4 1.2 1 40 VGS = 0 V TJ = 150°C 1000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 8 Figure 1. On−Region Characteristics 0.045 1.8 16 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ = 100°C 2 24 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.055 0.015 32 0 2.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = 10 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 40 TJ = 125°C 100 TJ = 100°C 10 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 1 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 60 NTD20N06, NTDV20N06 POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating td(on) and is read at a voltage corresponding to the on−state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG − VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn−on and turn−off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG − VGSP)] td(off) = RG Ciss In (VGG/VGSP) C, CAPACITANCE (pF) 2000 1600 VDS = 0 V VGS = 0 V TJ = 25°C Ciss 1200 800 Crss Ciss 400 Crss 0 10 5 VGS 0 VDS 10 5 15 Coss 20 25 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 1000 12 VDS = 30 V ID = 20 A VGS = 10 V QT 10 8 VGS Q2 Q1 6 t, TIME (ns) VGS , GATE−TO−SOURCE VOLTAGE (VOLTS) NTD20N06, NTDV20N06 4 2 0 100 tf tr td(off) 10 td(on) ID = 20 A TJ = 25°C 0 4 16 20 8 12 QG, TOTAL GATE CHARGE (nC) 1 24 1 Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 10 RG, GATE RESISTANCE (OHMS) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS IS, SOURCE CURRENT (AMPS) 20 VGS = 0 V TJ = 25°C 16 12 8 4 0 0.6 0.8 0.9 0.7 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1 Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with an increase of peak current in avalanche and peak junction temperature. Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance − General Data and Its Use.” Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 ms. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RqJC). A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For http://onsemi.com 5 NTD20N06, NTDV20N06 I D, DRAIN CURRENT (AMPS) 100 VGS = 20 V SINGLE PULSE TC = 25°C 10 10 ms 100 ms 1 ms 10 ms 1 0.1 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 EAS , SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) SAFE OPERATING AREA 180 140 120 100 80 60 40 20 0 Figure 11. Maximum Rated Forward Biased Safe Operating Area 1.0 ID = 18.4 A 160 25 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 0.00001 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 t, TIME (s) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.1 Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 6 1 10 NTD20N06, NTDV20N06 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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