BVDSS = 75 V RDS(on) typ=10.5 mΩ HFS75N75 ID = 80 A 75V N-Channel MOSFET TO-220F FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 77 nC (Typ.) Extended Safe Operating Area G Lower RDS(ON) : 0.0105 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol S TC=25℃ unless otherwise specified Parameter Value Units 75 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 80* A Drain Current – Continuous (TC = 100℃) 56* A IDM Drain Current – Pulsed 320* A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 1476 mJ IAR Avalanche Current (Note 1) 80 A EAR Repetitive Avalanche Energy (Note 1) 16 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 45 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 0.36 W/℃ -55 to +175 ℃ 300 ℃ * Drain current limited by junction temperature Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 3.3 RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A1,Dec 2008 HFS75N75 Dec 2008 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units -- 4.0 V On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 Static Drain-Source On-Resistance VGS = 10 V, ID = 40 A -- VGS = 0 V, ID = 250 ㎂ 75 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.06 -- V/℃ VDS = 75 V, VGS = 0 V -- -- 1 ㎂ VDS = 60 V, TC = 150℃ -- -- 10 ㎂ 0.0105 0.012 Ω Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 ㎁ -- 4340 5640 ㎊ -- 834 1080 ㎊ -- 55 72 ㎊ -- 30 60 ㎱ -- 193 380 ㎱ -- 130 260 ㎱ -- 136 270 ㎱ -- 77 100 nC -- 22 -- nC -- 19 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 37.5 V, ID = 80 A, RG = 25 Ω (Note 4,5) VDS = 60 V, ID = 80 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 80 ISM Pulsed Source-Drain Diode Forward Current -- -- 320 VSD Source-Drain Diode Forward Voltage IS = 80 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time -- 68 -- ㎱ Qrr Reverse Recovery Charge IS = 80 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 160 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=307.5uH, IAS=80A, VDD=25V, RG=25Ω, Starting TJ =25°C 3. ISD≤80A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A1,Dec 2008 HFS75N75 Electrical Characteristics TC=25 °C HFS75N75 ID , Drain Current [A] Typical Characteristics 102 150oC 25oC -55oC 101 * Note 1. VDS = 40V 2. 250µs Pulse Test 100 2 4 6 8 10 VGS , Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] RDS(on) , [Ω] Drain-Source On-Resistance 0.014 0.013 VGS = 10V 0.012 0.011 0.010 VGS = 20V 0.009 102 150oC 25oC 1 10 * Note : 1. VGS = 0V 2. 250µs Pulse Test * Note : TJ = 25oC 0.008 0 25 50 75 100 125 150 175 100 0.2 200 0.4 0.6 ID , Drain Current [A] 1.0 1.2 1.4 1.6 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 8000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss * Note ; 1. VGS = 0 V 2. f = 1 MHz Ciss 4000 Crss 2000 VDS = 15V VGS, Gate-Source Voltage [V] 6000 Capacitances [pF] 0.8 VSD , Source-Drain Voltage [V] VDS = 37.5V 10 VDS =60V 8 6 4 2 * Note : ID = 80.0 A 0 10-1 100 101 0 0 20 40 60 80 100 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A1,Dec 2008 (continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFS75N75 Typical Characteristics 1.1 1.0 * Note : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Note : 1. VGS = 10 V 2. ID = 40.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 103 80 10 µs 100 µs 1 ms 10 ms 60 ID, Drain Current [A] 101 100 ms Operation in This Area is Limited by R DS(on) DC 100 * Notes : 1. TC = 25 oC 10-1 40 20 o 2. TJ = 150 C 3. Single Pulse 10-2 100 101 0 25 102 50 75 100 125 150 175 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 ZθJC(t), Thermal Response ID, Drain Current [A] 102 100 0.2 * Notes : 1. ZθJC(t) = 3.3 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 0.05 10-1 0.02 0.01 PDM t1 single pulse -2 10 10-5 10-4 10-3 10-2 10-1 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A1,Dec 2008 HFS75N75 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A1,Dec 2008 HFS75N75 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A1,Dec 2008 HFS75N75 Package Dimension TO-220F ±0.20 ±0.20 0 0.2 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 φ 8± 1 . 3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A1,Dec 2008