POSEICO ATF1040S20S Fast switching thyristor Datasheet

POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
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POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST SWITCHING THYRISTOR
ATF1040
FINAL SPECIFICATION
Repetitive voltage up to
Mean on-state current
Surge current
Turn-off time
2000
1075
14
50
V
A
kA
µs
mag 06 - ISSUE : 07
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
2000
V
V
RSM
Non-repetitive peak reverse voltage
125
2100
V
V
DRM
Repetitive peak off-state voltage
125
2000
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
150
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
150
mA
CONDUCTING
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
1075
A
I
T (AV)
Mean on-state current
180° sin, 1 kHz, Th=55°C, double side cooled
1000
A
I
TSM
Surge on-state current, non repetitive
sine wave, 10 ms
I² t
I² t
without reverse voltage
V
T
On-state voltage
On-state current =
T(TO)
Threshold voltage
125
1,40
V
T
On-state slope resistance
125
0,414
mohm
V
r
125
14
980 x1E3
2000 A
25
2,6
kA
A²s
V
SWITCHING
di/dt
Critical rate of rise of on-state current, min
From 75% VDRM up to 1200 A, gate 10V 5 ohm
125
500
A/µs
dv/dt
Critical rate of rise of off-state voltage, min
Linear ramp up to 70% of VDRM
125
500
V/µs
td
Gate controlled delay time, typical
VD=100V, gate source 20V, 10 ohm , tr=1 µs
25
0,6
µs
tq
Circuit commutated turn-off time
125
50
µs
620
µC
di/dt =
dV/dt =
Q rr
Reverse recovery charge
20
A/µs, I= 1000
I = 800
A
200 V/µs , up to
75%
di/dt =
60
A/µs, I= 1000
I = 1000
A
VR =
50
V
I rr
Peak reverse recovery current
I
H
Holding current, typical
VD=5V, gate open circuit
I
L
Latching current, typical
A
VDRM
A
125
227
A
25
500
mA
VD=5V, tp=30µs
25
850
mA
Gate trigger voltage
VD=5V
25
3,5
V
GATE
V
GT
I
GT
Gate trigger current
VD=5V
25
350
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0,25
V
V
FGM
Peak gate voltage (forward)
25
30
V
I
FGM
Peak gate current
25
10
A
V
RGM
Peak gate voltage (reverse)
25
5
V
P
GM
Peak gate power dissipation
25
150
W
P
G(AV)
Average gate power dissipation
25
3
W
R
th(j-h)
26
°C/kW
6
°C/kW
Pulse width 100 µs
MOUNTING
Thermal impedance, DC
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
R
th(c-h)
Thermal impedance, DC
T
j
Operating junction temperature
F
Mounting force
Mass
-30 / 125
°C
14.0 / 17.0
kN
500
tq code
ORDERING INFORMATION : ATF1040 S 20 S
standard specification
tq code
VDRM&VRRM/100
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
g
ATF1040 FAST SWITCHING THYRISTOR
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 07
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
1800
1000 A
1600
1400
500 A
Qrr [µC]
1200
1000
250 A
800
600
400
200
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
1000
1000 A
800
500 A
Irr [A]
600
250 A
400
200
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
ta = Irr / (di/dt)
tb = trr - ta
di/dt
IF
ta
Softness (s factor) s = tb / ta
Irr
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb
Vr
ATF1040 FAST SWITCHING THYRISTOR
FINAL SPECIFICATION
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
mag 06 - ISSUE : 07
SURGE CHARACTERISTIC
Tj = 125 °C
3500
16
3000
14
12
2500
ITSM [kA]
On-state Current [A]
ON-STATE CHARACTERISTIC
Tj = 125 °C
2000
1500
1000
10
8
6
4
500
2
0
0
0,6
1,1
1,6
2,1
1
2,6
10
On-state Voltage [V]
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
35
30
Zth j-h [°C/kW]
25
20
15
10
5
0
0,001
0,01
0,1
1
t[s]
10
100
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
100
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