Central CJD340 Surface mount complementary silicon power transistor Datasheet

CJD340 NPN
CJD350 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD340, CJD350
types are Complementary Silicon Power Transistors
manufactured in a surface mount package designed for
high voltage general purpose applications.
MARKING: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
UNITS
300
V
300
V
VEBO
IC
3.0
V
500
mA
Peak Collector Current
ICM
750
mA
Power Dissipation
PD
PD
15
W
Continuous Collector Current
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
1.56
W
-65 to +150
°C
Thermal Resistance
TJ, Tstg
ΘJC
8.33
°C/W
Thermal Resistance
ΘJA
80.1
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCE=300V
100
µA
IEBO
VEB=3.0V
100
µA
BVCEO
IC=1.0mA
300
hFE
VCE=10V, IC=50mA
30
V
240
R2 (4-January 2010)
CJD340 NPN
CJD350 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTORS
DPAK TRANSISTOR CASE - MECHANICAL OUTLINE
LEAD CODE:
B) BASE
C) COLLECTOR
E) EMITTER
C) COLLECTOR
MARKING:
FULL PART NUMBER
R2 (4-January 2010)
w w w. c e n t r a l s e m i . c o m
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