PD - 97239 IRF6638PbF IRF6638TRPbF DirectFET Power MOSFET RoHs Compliant Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260°C Reflow) VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters 30V max ±20V max 2.2mΩ@ 10V 3.0mΩ@ 4.5V l Low Conduction Losses Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt Immunity 30nC 11nC 3.2nC 27nC 18.4nC 1.8V l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l DirectFET ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6638PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6638PbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6638PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g h Typical RDS(on) (mΩ) 10 ID = 25A 8 6 4 T J = 125°C 2 T J = 25°C 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance Vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com e e f VGS, Gate-to-Source Voltage (V) VDS Max. Units 30 ±20 25 20 140 200 37 20 V A mJ A 6.0 ID= 20A 5.0 4.0 VDS= 24V VDS= 15V VDS= 6.0V 3.0 2.0 1.0 0.0 0 5 10 15 20 25 30 35 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.19mH, RG = 25Ω, IAS = 20A. 1 07/13/06 IRF6638PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Conditions Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– ∆ΒVDSS/∆TJ RDS(on) Breakdown Voltage Temp. Coefficient ––– 22 ––– Static Drain-to-Source On-Resistance ––– 2.2 2.9 ––– 3.0 3.9 V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 25A i VGS = 4.5V, ID = 20A i VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th)/∆TJ IDSS Gate Threshold Voltage Coefficient ––– -5.6 ––– mV/°C Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 VDS = VGS, ID = 100µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Gate-to-Source Reverse Leakage ––– ––– -100 Forward Transconductance 105 ––– ––– Total Gate Charge ––– 30 45 Qgs1 Pre-Vth Gate-to-Source Charge ––– 6.7 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 3.2 ––– Qgd Gate-to-Drain Charge ––– 11 ––– ID = 20A Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 9.1 ––– See Fig. 15 Qsw ––– 14.2 ––– Qoss Output Charge ––– 18.4 ––– nC Ω gfs Qg S VDS = 15V, ID = 20A VDS = 15V nC RG Gate Resistance ––– 1.3 ––– td(on) Turn-On Delay Time ––– 19 ––– tr Rise Time ––– 45 ––– td(off) Turn-Off Delay Time ––– 28 ––– tf Fall Time ––– 6.2 ––– Ciss Input Capacitance ––– 3770 ––– Coss Output Capacitance ––– 810 ––– Crss Reverse Transfer Capacitance ––– 410 ––– Min. Typ. Max. Units VGS = 4.5V VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5Vc ID = 20A ns Clamped Inductive Load See Fig. 16 & 17 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current ––– ––– 3.5 ––– ––– 200 (Body Diode) ISM Pulsed Source Current Conditions MOSFET symbol A showing the integral reverse VSD Diode Forward Voltage ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V i trr Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = 20A Qrr Reverse Recovery Charge ––– 27 41 nC di/dt = 300A/µs iSee Fig. 18 (Body Diode)g Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF6638PbF Absolute Maximum Ratings e e f Max. Units 2.8 1.8 89 270 -40 to + 150 W Parameter Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG °C Thermal Resistance Parameter em km lm fm RθJA RθJA RθJA RθJC RθJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor e Typ. Max. Units ––– 12.5 20 ––– 1.0 45 ––– ––– 1.4 ––– °C/W 0.022 W/°C 100 Thermal Response ( Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 τJ 0.1 τJ τ1 R2 R2 R3 R3 R4 R4 τA τ2 τ1 τ2 τ3 τ4 τ3 Ci= τi/Ri Ci= τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.01 R1 R1 τ4 τA Ri (°C/W) τi (sec) 1.280114 0.000322 8.725568 0.164798 21.75 2.2576 13.25114 69 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized Rθ is measured at TJ of approximately 90°C. back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). www.irf.com Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3 IRF6638PbF 1000 1000 100 BOTTOM VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 ≤60µs PULSE WIDTH Tj = 25°C 1 BOTTOM 100 2.5V VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 10 2.5V ≤60µs PULSE WIDTH Tj = 150°C 0.1 1 0.1 1 10 100 0.1 1.6 VDS = 15V ≤60µs PULSE WIDTH ID = 25A Typical RDS(on) (Normalized) ID, Drain-to-Source Current (Α) 100 Fig 5. Typical Output Characteristics 1000 100 10 T J = 150°C T J = 25°C T J = -40°C 1 0.1 1.4 1.2 1.0 V GS = 10V 0.8 V GS = 4.5V 0.6 1 2 3 4 5 30 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd TJ = 25°C 25 Typical RDS(on) ( mΩ) C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 Fig 7. Normalized On-Resistance vs. Temperature Fig 6. Typical Transfer Characteristics 100000 -60 -40 -20 0 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) 10 V DS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics Crss Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V 20 15 10 5 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 1 0 20 40 60 80 100 120 140 160 180 200 220 ID, Drain Current (A) Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage www.irf.com IRF6638PbF 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150°C T J = 25°C T J = -40°C 10 1 100µsec 1msec 10 10msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Fig 10. Typical Source-Drain Diode Forward Voltage 10 100 Fig11. Maximum Safe Operating Area 150 Typical VGS(th) Gate threshold Voltage (V) 2.5 125 ID, Drain Current (A) 1 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) 100 75 50 25 0 2.0 ID = 250µA 1.5 1.0 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature Fig 13. Typical Threshold Voltage vs. Junction Temperature EAS , Single Pulse Avalanche Energy (mJ) 150 ID 5.5A 6.5A BOTTOM 20A TOP 125 100 75 50 25 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy Vs. Drain Current www.irf.com 5 IRF6638PbF Current Regulator Same Type as D.U.T. Id Vds 50KΩ Vgs .2µF 12V .3µF + V - DS D.U.T. Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Current Sampling Resistors Fig 15a. Gate Charge Test Circuit Qgd Qgodr Fig 15b. Gate Charge Waveform V(BR)DSS 15V DRIVER L VDS tp D.U.T V RGSG + V - DD IAS 20V tp A I AS 0.01Ω Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit LD VDS VDS 90% + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% Fig 17a. Switching Time Test Circuit 6 10% VGS td(on) tr td(off) tf Fig 17b. Switching Time Waveforms www.irf.com IRF6638PbF D.U.T Driver Gate Drive + + - * D.U.T. ISD Waveform Reverse Recovery Current + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt RG • • • • di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. Re-Applied Voltage + Body Diode VDD Forward Drop Inductor Current Inductor Curent - Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D S G S D www.irf.com D 7 IRF6638PbF DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC CODE MIN MAX A 6.35 6.25 B 4.80 5.05 C 3.95 3.85 D 0.45 0.35 E 0.72 0.68 F 0.72 0.68 1.42 G 1.38 H 0.84 0.80 J 0.42 0.38 K 0.88 1.01 L 2.41 2.28 M 0.616 0.676 R 0.020 0.080 P 0.17 0.08 IMPERIAL MIN MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.054 0.056 0.032 0.033 0.015 0.017 0.035 0.039 0.090 0.095 0.0235 0.0274 0.0008 0.0031 0.003 0.007 DirectFET Part Marking 8 www.irf.com IRF6638PbF DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6638TRPBF). For 1000 parts on 7" reel, order IRF6638TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL METRIC IMPERIAL METRIC MIN MAX MIN CODE MAX MIN MIN MAX MAX 12.992 N.C 6.9 A N.C 177.77 N.C 330.0 N.C 0.795 0.75 B N.C 19.06 20.2 N.C N.C N.C 0.504 0.53 C 0.50 13.5 12.8 0.520 12.8 13.2 0.059 0.059 D 1.5 N.C 1.5 N.C N.C N.C 3.937 2.31 E 58.72 N.C 100.0 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.488 0.47 11.9 N.C 12.4 0.567 12.01 14.4 H 0.469 0.47 11.9 N.C 11.9 0.606 12.01 15.4 LOADED TAPE FEED DIRECTION CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 6.50 0.264 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/06 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/