IXGH 10N170A VCES IXGT 10N170A IC25 VCE(sat) tfi(typ) High Voltage IGBT Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 10 A IC90 TC = 90°C 5 A ICM TC = 25°C, 1 ms 20 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22Ω Clamped inductive load tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω 10 PC TC = 25°C 140 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C ICM = 20 @ 0.8 VCES TJ Md Mounting torque (M3) (TO-247) Weight TO-247 TO-268 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC © 2003 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 250 µA, VCE = VGE = IC90, VGE = 15 V °C 6 4 1700 3.0 Note 1 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 4.5 5.2 G E C (TAB) TO-247 AD (IXGH) G µs 300 TO-268 (IXGT) A 1.13/10Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s = 1700 V = 10 A = 6.0 V = 35 ns 5.0 V V 25 500 µA µA ±100 nA 6.0 V V G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z Very high frequency z MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification z z Applications z Pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Advantages z High power density z Suitable for surface mounting z Easy to mount with 1 screw, (isolated mounting screw hole) DS98991B(11/03) IXGH IXGT Symbol Test Conditions gfs IC = IC25; VCE = 20 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 5 S 650 pF 40 pF 22 pF 29 nC 5 nC QGC 10 nC td(on) 46 ns Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres QG QGE IC = IC90, VGE = 15 V, VCE = 0.5 VCES tri 57 Inductive load, TJ = 25°°C td(off) 190 IC = IC25, VGE = 15 V tfi RG = 22 Ω, VCE = 0.5 VCES Eoff Inductive load, TJ = 125°°C Eon td(off) IC = IC25, VGE = 15 V RG = 22 Ω, VCE = 0.5 VCES tfi ns 0.38 0.8 mJ 48 ns 59 ns 1.2 200 mJ ns 40 ns 0.6 mJ 0.25 0.89 K/W K/W Eoff RthJC RthCK (TO-247) Notes: 1. 2. ns 35 td(on) tri ns 360 10N170A 10N170A TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH IXGT Fig. 1. Output Characteristics @ 25 Deg. C 10 VG E = 17V 35 9V 15V 30 7 6 I C - Amperes I C - Amperes 8 Fig. 2. Extended Output Characteristics @ 25 deg. C 40 VG E = 17V 15V 13V 11V 9 7V 5 4 3 13V 25 11V 20 9V 15 10 2 5 1 0 7V 0 1 2 3 4 5 6 7 8 9 0 V CE - Volts Fig. 3. Output Characteristics @ 125 Deg. C 10 15 V CE - Volts 20 25 30 2.6 VG E = 17V 15V 13V 11V 8 7 2.4 9V 6 VC E (sat) - Normalized 9 I C - Amperes 5 Fig. 4. Temperature Dependence of V CE(sat) 10 7V 5 4 3 2 VG E = 15V 2.2 I C = 10A 2 1.8 1.6 I C = 5A 1.4 1.2 I C = 2.5A 1 1 0.8 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage Fig. 6. Input Admittance 15 12 11 12.5 T J = 25º C 10 8 I C - Amperes 9 VCE - Volts 10N170A 10N170A I C = 10A 7 6 10 7.5 5 T J = 125º C 5A 5 25º C 2.5 -40º C 4 2.5A 3 0 5 6 7 8 9 10 11 V GE - Volts © 2003 IXYS All rights reserved 12 13 14 15 4 5 6 7 V GE - Volts 8 9 IXGH IXGT Fig. 8. Dependence of Eoff on RG Fig. 7. Transconductance 8 1.3 T J = -40º C 7 1.1 125º C E off - milliJoules g f s - Siemens 6 5 4 3 2 I C = 20A 1 0.9 I C = 10A 0.8 0.7 0.6 1 I C = 5A 0.5 0 0.4 0 2.5 5 7.5 10 12.5 15 0 20 40 60 80 100 120 I C - Amperes R G - Ohms Fig. 9. Dependence of Eoff on IC Fig. 10. Dependence of Eoff on Temperature 140 1.6 1.4 T J = 125º C VG E = 15V VC E = 850V 1.3 1.2 1.1 E off - milliJoules E off - milliJoules TJ = 125º C VG E = 15V VC E = 1360V 1.2 25º C 1 0.9 R G = 120 Ohms 0.8 0.7 1.4 So lid lines - R G = 120 Ohms Dashed lines - R G = 20 Ohms 1.2 VG E = 15V VC E = 850V I C = 20A 1 0.8 0.6 R G = 20 Ohms 0.6 I C = 10A 0.4 0.5 I C = 5A 0.4 0.2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 TJ - Degrees Centigrade I C - Amperes Fig. 11. Gate Charge Fig. 12. Capacitance 1000 15 VC E = 600V I C = 5A I G = 10mA C ies Capacitance - pF 12 VG E - Volts 10N170A 10N170A 9 6 f = 1M Hz 100 C oes 3 C res 0 10 0 5 10 15 20 25 30 Q G - nanoCoulombs 0 5 10 15 20 25 30 35 40 V CE - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH IXGT 10N170A 10N170A Fig. 13. M axim um T ransient T herm al R esistance 1 0 .9 R (th) J C - (ºC/W) 0 .8 0 .7 0 .6 0 .5 0 .4 0 .3 0 .2 1 10 10 0 Puls e W idth - millis ec onds © 2003 IXYS All rights reserved 10 0 0