BC846AW,BW BC847AW, BW, CW BC848AW, BW, CW Elektronische Bauelemente NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications Base Emitter Collector SOT-323 A Collector 3 MARKING BC846AW=1A;BC846BW=1B; BC847AW=1E;BC847BW=1F;BC847CW=1G; BC848AW=1J;BC848BW=1K;BC848CW=1L L 3 C B Top View 1 1 K 2 E 2 Base D Emitter F G REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. REF. G H J K L ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise noted ) PARAMETER SYMBOL BC846W Collector to Base Voltage Collector to Emitter Voltage BC847W VCBO 30 BC846W 65 VCEO BC847W Junction, Storage Temperature 24-Mar-2010 Rev. A V 6 VEBO 6 IC 0.1 A PC 150 mW TJ, TSTG 150, -55 ~ 150 ℃ BC848W Collector Power Dissipation 45 V 30 BC846W Collector Current - Continuous 50 BC848W BC847W UNIT 80 BC848W Emitter to Base Voltage RATINGS V 5 Page 1 of 4 BC846AW,BW BC847AW, BW, CW BC848AW, BW, CW Elektronische Bauelemente NPN Plastic Encapsulate Transistor ELECTRICAL CHARACTERISTICS ( Tamb = 25°C unless otherwise specified ) PARAMETER SYMBOL BC846W Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage BC847W MIN. VCBO 50 30 BC846W 65 VCEO 45 BC848W 30 BC846W 6 BC847W VEBO BC848W Collector Cutoff Current Base to Emitter Saturation Voltage Base to Emitter Voltage 6 VCE(sat) VBE(sat) VBE(on) DC Current Gain hFE(1) - - V IC = 10 mA, IB = 0 - - V IE = 1 μA, IC = 0 nA - 15 - 0.25 - - 0.6 - 0.7 - - 0.9 - 580 660 700 - 770 - 150 BC846BW,BC847BW,BC848BW BC847CW,BC848CW 24-Mar-2010 Rev. A V mV IC = 100mA, IB = 5 mA IC = 10mA, IB = 0.5 mA IC = 100mA, IB = 5 mA VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA - VCE = 5 V, IC = 10 μA hFE(2) 200 220 - 420 450 VCE = 5 V, IC = 2 mA 800 fT 100 - - MHz VCE = 5 V, IC = 10 mA, f = 100MHz COb - - 4.5 pF VCB = 10 V, f=1MHz - BC846AW,BC847AW,BC848AW Noise Figure V VCB = 30 V IC = 10mA, IB = 0.5 mA 270 110 BC847CW,BC848CW Collector Output Capacitance IC = 10 uA, IE = 0 - BC847CW,BC848CW Transition Frequency V 90 BC846AW,BC847AW,BC848AW BC846BW,BC847BW,BC848BW - - BC846AW,BC847AW,BC848AW BC846BW,BC847BW,BC848BW - 5 ICBO Collector to Emitter Saturation Voltage TEST CONDITIONS 80 BC848W BC847W TYP. MAX. UNIT NF - - 10 4 VCE= 5 V, IC= 0.2 mA, dB f= 1KHz, RS= 2 KΩ, BW= 200Hz Page 2 of 4 Elektronische Bauelemente BC846AW,BW BC847AW, BW, CW BC848AW, BW, CW NPN Plastic Encapsulate Transistor CHARACTERISTIC CURVES 24-Mar-2010 Rev. A Page 3 of 4 Elektronische Bauelemente BC846AW,BW BC847AW, BW, CW BC848AW, BW, CW NPN Plastic Encapsulate Transistor CHARACTERISTIC CURVES 24-Mar-2010 Rev. A Page 4 of 4