EGF20AH THRU EGF20MH SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes EEDD SMB/DO-214AA T T N N E E T T PPAA FEATURES 0.150(3.80) 0.087(2.20) 0.130(3.30) 0.075(1.90) * Halogen-free type * GPRC (Glass Passivated Rectifier Chip) inside * Glass passivated cavity-free junction 0.187(4.75) * Ideal for surface mount automotive applications 0.167(4.24) * Superfast recovery time for high efficiency * Built-in strain relief * Easy pick and place o * High temperature soldering guaranteed: 260 C/10 seconds, 0.016(0.40) 0.006(0.15) at terminals 0.096(2.43) 0.079(2.00) * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 0.050(1.40) 0.039(1.0) 0.236(6.00) 0.197(5.00) MECHANICAL DATA Case : JEDEC DO-214AA molded plastic over passivated chip Terminals : Tin plated, solderable per MIL-STD-750, Method 2026 *Dimensions in inches and (millimeters) Polarity : Color band denotes cathode end TM Weight : 0.003 ounes , 0.093 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o EGF20 Ratings at 25 C ambient temperature SYMBOLS unless otherwise specified. AH BH DH GH JH KH MH UNITS Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts VDC 50 100 200 400 600 800 1000 Volts Maximum DC blocking voltage o Maximum average forward rectified current at TL=75 C I (AV) 2.0 Amps Peak forward surge current 8.3ms single half sine-wave IFSM 65 60 Amps 1.7 Volts superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0 A VF o 1.25 IR 5 30 100 5 100 - uA Maximum reverse recovery time (NOTE 1) trr 50 75 nS Typical junction capacitance (NOTE 2) CJ Maximum DC reverse current at rated DC blocking voltage TA=25 C o TA=125 C o TA=150 C 1.0 Typical thermal resistance (NOTE 3) Operating junction and storage temperature range R R JA JL TJ,TSTG 45 pF 75 20 o C/W o -65 to +175 C NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas. REV. 0 Zowie Technology Corporation RATINGS AND CHARACTERISTIC CURVES EGF20AH THRU EGF20MH FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 70 RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 2.0 1.5 1.0 0.5 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 60 50 40 EGF20AH~EGF20GH EGF20JH~EGF20MH 30 20 10 0 0 0 25 50 75 100 125 150 1 175 10 LEAD TEMPERATURE, C FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 10.00 PULSE WIDTH=300uS 1% DUTY CYCLE INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 100 NUMBER OF CYCLES AT 60Hz o 1.00 0.10 EGF20JH~EGF20MH EGF20GH EGF20AH~EGF20DH o TJ = 150 C 1 o TJ = 25 C 0.1 0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 o TJ = 125 C 10 20 1.8 40 60 80 100 110 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 200 o TJ = 25 C 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS REV. 0 Zowie Technology Corporation