TetraFET D5006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS DV PIN 1 SOURCE PIN 2 DRAIN PIN 3 SOURCE PIN 4 SOURCE PIN 5 GATE PIN 6 SOURCE DIM A B C D E F G H J K M N O P Q mm 9.09 19.3 45° 5.71 1.65R 10.16 20.32 19.30 1.52R 10.77 22.86 3.17 0.13 4.19 6.35 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.02 0.13 REF Inches 0.358 0.760 45° 0.225 0.065R 0.400 0.800 0.760 0.060R 0.424 0.900 0.125 0.005 0.165 0.250 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.001 0.005 REF • LOW Crss • SIMPLE BIAS CIRCUITS • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 220W 125V ±20V 21A –65 to 150°C 200°C Document Number 3592 Issue 5 D5006UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit V VGS = 0 ID = 100mA VDS = 50V VGS = 0 7 mA VGS = 20V VDS = 0 1 μA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 3.5A GPS Common Source Power Gain PO = 150W η Drain Efficiency VDS = 50V VSWR Load Mismatch Tolerance f = 175MHz IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.7A 125 1 5.6 S 13 dB 40 % 20:1 — Ciss Input Capacitance VDS = 50V VGS = –5V f = 1MHz 420 pF Coss Output Capacitance VDS = 50V VGS = 0 f = 1MHz 175 pF Crss Reverse Transfer Capacitance VDS = 50V VGS = 0 f = 1MHz 10.5 pF * Pulse Test: Pulse Duration = 300 μs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Max. 0.8°C / W Document Number 3592 Issue 5