Eudyna FLK107MH-14 X, ku band power gaas fet Datasheet

FLK107MH-14
X, Ku Band Power GaAs FET
FEATURES
•
•
•
•
•
High Output Power: P1dB = 30.0dBm(Typ.)
High Gain: G1dB = 6.5dB(Typ.)
High PAE: ηadd = 31%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK102MH-14 is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
7.5
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Test Conditions
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
400
600
mA
Transconductance
gm
VDS = 5V, IDS = 250mA
-
200
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS = 20mA
-1.0
-2.0
-3.5
V
-5
-
-
V
29.0
30.0
-
dBm
5.5
6.5
-
dB
-
31
-
%
-
15
20
°C/W
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Power-added Efficiency
ηadd
Thermal Resistance
Rth
IGS = -20µA
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 14.5 GHz
Channel to Case
CASE STYLE: MH
Edition 1.1
August 1999
G.C.P.: Gain Compression Point
1
FLK107MH-14
X, Ku Band Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
500
VGS =0V
400
Drain Current (mA)
8
6
4
2
-0.5V
300
-1.0V
200
-1.5V
100
-2.0V
50
100
150
0
200
2
f = 14.5GHz
IDS ≈ 0.6 IDSS
VDS=10V
VDS=8.5V
P1dB (dBm)
31
40
24
ηadd
20
22
18
20 22
ηadd (%)
26
16
10
f = 14.5 GHz
IDS ≈ 0.6 IDSS
Pout
14
8
P1dB & ηadd vs. VDS
OUTPUT POWER vs. INPUT POWER
28
6
Drain-Source Voltage (V)
Case Temperature (°C)
30
4
30
P1dB
29
28
27
30
26
10
20
8
24
40
ηadd
9
10
Drain-Source Voltage (V)
Input Power (dBm)
2
ηadd (%)
0
Output Power (dBm)
Total Power Dissipation (W)
10
FLK107MH-14
X, Ku Band Power GaAs
S11
S22
15
14
+j25
+j100
13
12
+j250
+j10
1.6
1.2
10GHz
.08
11 12
13
14
11
16
SCALE FOR |S12|
10GHz
0
S21
S12
+90°
SCALE FOR |S21|
+j50
10
100
50Ω
16
15
14
250
10GHz
180°
0.2
0.1
.04
10GHz
12
14
0°
16
15
15
-j10
-j250
11
13
16
12
-j25
-j100
-j50
S11
-90°
S-PARAMETERS
VDS = 10V, IDS = 240mA
S21
S12
MAG
ANG
MAG
ANG
FREQUENCY
(MHZ)
MAG
ANG
500
.949
-99.8
8.893
131.6
.023
1000
.921
-137.6
5.628
114.8
10000
.783
-6.8
.924
10500
.769
-22.8
11000
.751
11500
S22
MAG
ANG
47.7
.275
-58.0
.028
37.1
.297
-80.9
90.5
.039
71.6
.852
171.3
.932
85.8
.038
64.4
.857
166.9
-39.7
.959
79.8
.039
67.8
.843
161.7
.730
-57.4
.981
74.2
.043
63.7
.827
156.0
12000
.699
-76.9
1.032
71.9
.049
62.1
.825
149.9
12500
.659
-98.1
1.109
60.8
.044
63.5
.820
142.6
13000
.609
-119.9
1.151
53.5
.045
64.8
.824
134.6
13500
.544
-142.1
1.255
44.7
.045
51.5
.851
125.6
14000
.456
-162.6
1.402
30.5
.046
37.2
.890
113.9
14500
.331
179.3
1.521
19.7
.045
7.2
.913
102.8
15000
.170
-155.0
1.764
-4.8
.063
-39.7
.875
89.2
15500
.528
-132.8
1.697
-50.1
.108
-107.7
.654
69.0
16000
.878
-174.9
1.225
-99.6
.158
-171.2
.226
87.9
Download S-Parameters, click here
3
FLK107MH-14
X, Ku Band Power GaAs FET
1.0 Min.
(0.039)
Case Style "MH"
Metal-Ceramic Hermetic Package
2-Ø1.8±0.15
(0.071)
0.1
(0.004)
3.5±0.15
(0.138)
1
3
2
0.5
(0.020)
1.0 Min.
(0.039)
4
1.65±0.15
(0.065)
2.8 Max.
(0.110)
3.5±0.3
(0.138)
1.0
(0.039)
1.
2.
3.
4.
Gate
Source (Flange)
Drain
Source (Flange)
Unit: mm(inches)
6.7±0.2
(0.264)
10.0±0.3
(0.394)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
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