IRFNJ130N IRFN130SMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 VDSS ID(cont) RDS(on) 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 2 100V 11A Ω 0.19Ω FEATURES 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) SMD05 (TO-276AA) IRFNJ130 PAD1 = GATE N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE PAD 2 DRAIN PAD3 = SOURCE • ALL LEADS ISOLATED FROM CASE IRFN130SMD05 PAD1 = SOURCE PAD 2 = DRAIN PAD3 = GATE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C 11A ID Continuous Drain Current @ Tcase = 100°C 7A IDM Pulsed Drain Current 44A PD Power Dissipation @ Tcase = 25°C 45W Linear Derating Factor 0.36W/°C TJ , Tstg Operating and Storage Temperature Range –55 to 150°C RθJC Thermal Resistance Junction to Case 2.8°C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5831 Issue 1 IRFNJ130N IRFN130SMD05 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. 100 Reference to 25°C V 0.1 V / °C Breakdown Voltage ID = 1mA Static Drain – Source On–State VGS = 10V ID = 7A 0.19 Resistance VGS = 10V ID = 11A 0.22 VDS = VGS ID = 250µA 2 VDS ≥ 15V IDS = 7A 3 VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 VGS(th) Gate Threshold Voltage 4 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 650 Coss Output Capacitance VDS = 25V 240 Crss Reverse Transfer Capacitance f = 1MHz 44 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 11 ISM Pulse Source Current 43 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 11A Qrr Reverse Recovery Charge di / dt ≤ 100A/µs VDD ≤ 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance VGS = 10V ID = 11A 28.5 ID = 11A 1.0 6.3 VDS = 0.5BVDSS 3.8 16.6 V (Ω) S(Ω µA nA nC nC 30 VDD = 50V 75 ID = 11A 40 RG = 7.5Ω IS = 11A Ω pF 12.8 VDS = 0.5BVDSS Unit ns 45 TJ = 25°C VGS = 0 TJ = 25°C (from 6mm down drain lead pad to centre of die) 8.7 (from 6mm down source lead to centre of source bond pad) 8.7 A 1.5 V 300 ns 3 µC nH Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5831 Issue 1