To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. HAT2195R Silicon N Channel Power MOS FET Power Switching REJ03G0060-0300Z Rev.3.00 Apr.01.2004 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.6 mΩ typ. (at VGS = 10 V) Outline SOP-8 5 6 7 8 D D D D 8 5 7 6 4 G 3 1 2 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg 30 ±20 18 144 18 18 32.4 2.5 50 150 –55 to +150 V V A A A A mJ W °C/W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Rev.3.00, Apr.01.2004, page 1 of 6 HAT2195R Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage V(BR)DSS IGSS IDSS VGS(off) 30 — — 1.0 — — — — — ± 0.1 1 2.5 V µA µA V ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd — — 25 — — — — — — — 4.6 5.8 42 3400 785 250 1.0 23 10 5.5 5.8 8.4 — — — — — — — — mΩ mΩ S pF pF pF Ω nC nC nC ID = 9 A, VGS = 10 V Note4 ID = 9 A, VGS = 4.5 V Note4 ID = 9 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage td(on) tr td(off) tf VDF trr 12 16 50 6.5 0.80 32 — — — — 1.04 — ns ns ns ns V ns VGS = 10 V, ID = 9 A VDD ≅ 10 V RL = 1.11 Ω Rg = 4.7 Ω IF = 18 A, VGS = 0 Note4 Body–drain diode reverse recovery time — — — — — — VDD = 10 V VGS = 4.5 V ID = 18 A IF = 18 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 4. Pulse test Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 3.0 10 µs ID (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s Drain Current Channel Dissipation Pch (W) 4.0 2.0 1.0 100 PW 10 DC 10 1m 0µ s =1 s 0m s Op era tio n (P W N 1 Operation in < 1 ote 0s 5 this area is ) limited by RDS(on) 0.1 Ta = 25 °C 1 shot Pulse 0 50 100 Ambient Temperature 150 Ta (°C) 200 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Rev.3.00, Apr.01.2004, page 2 of 6 HAT2195R Typical Output Characteristics 2.8 V V DS = 10 V Pulse Test 40 4V 30 2.6 V 20 VGS = 2.4 V 10 ID (A) 40 10 V Typical Transfer Characteristics 50 Drain Current Drain Current ID (A) 50 30 25°C 20 Tc = 75°C –25°C 10 Pulse Test 0 2 4 6 Drain to Source Voltage 0 8 10 VDS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 160 ID = 20 A 80 10 A 40 Drain to Source On State Resistance RDS(on) (mΩ) 0 5A 4 8 12 Gate to Source Voltage 20 A 5 A, 10 A 8 VGS = 4.5 V 6 ID = 5 A, 10 A, 20 A 4 10 V 2 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Rev.3.00, Apr.01.2004, page 3 of 6 20 10 VGS = 4.5 V 5 10 V 2 1 16 20 VGS (V) Static Drain to Source on State Resistance vs. Temperature 12 Pulse Test 10 Drain to Source On State Resistance RDS(on) (mΩ) 120 Pulse Test 1 3 30 100 300 10 Drain Current ID (A) 1000 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) VDS(on) (mV) Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 5 4 VGS (V) 1 2 3 Gate to Source Voltage 1000 300 Tc = –25 °C 100 30 10 75 °C 25 °C 3 1 VDS = 10 V Pulse Test 0.3 0.1 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2195R Body Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 Ciss Capacitance C (pF) Reverse Recovery Time trr (ns) 100 50 20 10 0.1 3000 1000 Coss 300 Crss 100 30 di/dt = 100 A/µs VGS = 0, Ta = 25°C VGS = 0 f = 1 MHz 10 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 0 5 VDD = 25 V 10 V 5V 8 10 4 VDD = 25 V 10 V 5V 20 40 60 80 Gate Charge Qg (nC) 0 100 Switching Time t (ns) 12 20 0 16 VGS (V) VGS VDS 100 td(off) 30 VGS = –5.0 V 20 10 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage Rev.3.00, Apr.01.2004, page 4 of 6 1.6 VSD (V) tr td(on) 10 tf 3 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty < 1 % 1 0.1 2.0 Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) 10 V 5V (V) 0.3 1 3 Drain Current 10 30 ID (A) 100 Maximum Avalanche Energy vs. Channel Temperature Derating 50 30 30 300 Reverse Drain Current vs. Source to Drain Voltage 40 25 Switching Characteristics Gate to Source Voltage VDS (V) Drain to Source Voltage 30 20 1000 20 ID = 18 A 40 15 Drain to Source Voltage VDS Dynamic Input Characteristics 50 10 50 40 IAP = 18 A VDD = 15 V duty < 0.1 % Rg > 50 Ω 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) HAT2195R Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 10 1 D=1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 θch - f(t) = γs (t) x θch - f θch - f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.01 PDM 0.001 o 1sh 0.0001 10 µ tp uls D= e PW T PW T 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 2 L • IAP2 • VDSS VDSS – VDD I AP Monitor V (BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor Rg 90% D.U.T. RL Vin Vin 10 V VDS = 10 V Vout 10% 10% 90% td(on) Rev.3.00, Apr.01.2004, page 5 of 6 tr 10% 90% td(off) tf HAT2195R Package Dimensions As of January, 2003 Unit: mm 3.95 4.90 5.3 Max 5 8 *0.22 ± 0.03 0.20 ± 0.03 4 1.75 Max 1 0.75 Max + 0.10 6.10 – 0.30 1.08 0.14 – 0.04 *0.42 ± 0.08 0.40 ± 0.06 + 0.11 0˚ – 8˚ 1.27 + 0.67 0.60 – 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms — 0.085 g Ordering Information Part Name Quantity Shipping Container HAT2195R-EL-E 2500pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Apr.01.2004, page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. 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Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. 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