IC41C82002S IC41LV82002S Document Title 2Mx8 bit Dynamic RAM with EDO Page Mode Revision History Revision No History Draft Date 0A Initial Draft August 20,2001 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. DR022-0A 08/20/2001 1 IC41C82002S IC41LV82002S 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Self Refresh Mode 2,048 cycles/64ms • JEDEC standard pinout • Single power supply: 5V±10% or 3.3V ± 10% • Byte Write and Byte Read operation via CAS PRODUCT SERIES OVERVIEW Part No. IC41C82002S IC41LV82002S Refresh Voltage 2K 5V ± 10% 2K PIN CONFIGURATION 28 Pin SOJ, TSOP-2 3.3V ± 10% The ICSI 82002S Series is a 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 8-bit word. These features make the 82002S Series ideally suited for highbandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The 82002S Series is packaged in a 28-pin 300mil SOJ and a 28 pin 400mil TSOP-2 KEY TIMING PARAMETERS Parameter -50 RAS Access Time (tRAC) 50 60 ns CAS Access Time (tCAC) 13 15 ns Column Address Access Time (tAA) 25 30 ns EDO Page Mode Cycle Time (tPC) 20 25 ns Read/Write Cycle Time (tRC) 84 104 ns -60 Unit PIN DESCRIPTIONS A0-A10 Address Inputs I/O0-7 Data Inputs/Outputs WE Write Enable OE Output Enable RAS Row Address Strobe CAS Column Address Strobe Vcc Power GND Ground NC No Connection ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. 2 Integrated Circuit Solution Inc. DR022-0A 08/20/2001 IC41C82002S IC41LV82002S FUNCTIONAL BLOCK DIAGRAM TRUTH TABLE Function Standby Read Write: Word (Early Write) Read-Write Hidden Refresh Read Write(1) RAS-Only Refresh CBR Refresh RAS H L L L L→H→L L→H→L L H→L CAS H L L L L L H L WE X H L H→L H L X X OE X L X L→H L X X X Address tR/tC X ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/NA X I/O High-Z DOUT DIN DOUT, DIN DOUT DOUT High-Z High-Z Note: 1. EARLY WRITE only. Integrated Circuit Solution Inc. DR022-0A 08/20/2001 3 IC41C82002S IC41LV82002S Functional Description Refresh Cycle The IC41C82002S and IC41LV82002S are CMOS DRAMs optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 11 address bits. These are entered 11 bits (A0-A10) at a time for the 2K refresh device. The row address is latched by the Row Address Strobe (RAS). The column address is latched by the Column Address Strobe (CAS). RAS is used to latch the first 11 bits and CAS is used to latch the latter ten bits. To retain data, 2,048 refresh cycles are required in each 32 ms period. There are two ways to refresh the memory: 1. By clocking each of the 2,048 row addresses (A0 through A10) with RAS at least once every 32 ms. Any read, write, read-modify-write or RAS-only cycle refreshes the addressed row. Memory Cycle A memory cycle is initiated by bring RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. A new cycle must not be initiated until the minimum precharge time tRP, tCP has elapsed. Read Cycle A read cycle is initiated by the falling edge of CAS or OE, whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time specified by tAR. Data Out becomes valid only when tRAC, tAA, tCAC and tOE are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters. Write Cycle A write cycle is initiated by the falling edge of CAS and WE, whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE, whichever occurs last. 2. Using a CAS-before-RAS refresh cycle. CAS-beforeRAS refresh is activated by the falling edge of RAS, while holding CAS LOW. In CAS-before-RAS refresh cycle, an internal 11-bit counter provides the row addresses and the external address inputs are ignored. CAS-before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle. Self Refresh Cycle The Self Refresh allows the user a dynamic refresh, data retention mode at the extended refresh period of 64 ms. i.e., 31.25 µs per row when using distributed CBR refreshes. The feature also allows the user the choice of a fully static, low power data retention mode. The optional Self Refresh feature is initiated by performing a CBR Refresh cycle and holding RAS LOW for the specified tRASS. The Self Refresh mode is terminated by driving RAS HIGH for a minimum time of tRP. This delay allows for the completion of any internal refresh cycles that may be in process at the time of the RAS LOW-to-HIGH transition. If the DRAM controller uses a distributed refresh sequence, a burst refresh is not required upon exiting Self Refresh. However, if the DRAM controller utilizes a RAS-only or burst refresh sequence, all 2,048 rows must be refreshed within the average internal refresh rate, prior to the resumption of normal operation. Power-On After application of the VCC supply, an initial pause of 200 µs is required followed by a minimum of eight initialization cycles (any combination of cycles containing a RAS signal). During power-on, it is recommended that RAS track with VCC or be held at a valid VIH to avoid current surges. 4 Integrated Circuit Solution Inc. DR022-0A 08/20/2001 IC41C82002S IC41LV82002S ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameters VT Voltage on Any Pin Relative to GND VCC Supply Voltage IOUT PD TA TSTG Output Current Power Dissipation Commercial Operation Temperature Storage Temperature 5V 3.3V 5V 3.3V Rating Unit –1.0 to +7.0 –0.5 to +4.6 –1.0 to +7.0 –0.5 to +4.6 50 1 0 to +70 –55 to +125 V V mA W °C °C Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.) Symbol Parameter VCC Supply Voltage VIH Input High Voltage VIL Input Low Voltage TA Commercial Ambient Temperature 5V 3.3V 5V 3.3V 5V 3.3V Min. Typ. Max. Unit 4.5 3.0 2.4 2.0 –1.0 –0.3 0 5.0 3.3 — — — — — 5.5 3.6 VCC + 1.0 VCC + 0.3 0.8 0.8 70 V V V °C CAPACITANCE(1,2) Symbol Parameter CIN1 CIN2 CIO Input Capacitance: A0-A10 Input Capacitance: RAS, CAS, WE, OE Data Input/Output Capacitance: I/O0-I/O7 Max. Unit 5 7 7 pF pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz. Integrated Circuit Solution Inc. DR022-0A 08/20/2001 5 IC41C82002S IC41LV82002S ELECTRICAL CHARACTERISTICS(1) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter Test Condition IIL Input Leakage Current IIO Min. Max. Unit Any input 0V ≤ VIN ≤ Vcc Other inputs not under test = 0V –5 5 µA Output Leakage Current Output is disabled (Hi-Z) 0V ≤ VOUT ≤ Vcc –5 5 µA VOH Output High Voltage Level IOH = –5.0 mA with VCC=5V IOH = –2.0 mA with VCC=3.3V 2.4 — V VOL Output Low Voltage Level IOL = 4.2 mA with VCC=5V IOL = 2 mA with VCC=3.3V — 0.4 V ICC1 Standby Current: TTL RAS, CAS ≥ VIH 5V 3.3V — — 2 0.5 mA ICC2 Standby Current: CMOS RAS, CAS ≥ VCC – 0.2V 5V 3.3V — — 1 0.5 mA ICC3 Operating Current: Random Read/Write(2,3,4) Average Power Supply Current RAS, CAS, Address Cycling, tRC = tRC (min.) -50 -60 — — 120 110 mA ICC4 Operating Current: EDO Page Mode(2,3,4) Average Power Supply Current RAS = VIL, CAS Cycling, tRC = tRC (min.) -50 -60 — — 90 80 mA ICC5 Refresh Current: RAS-Only(2,3) Average Power Supply Current RAS Cycling, CAS ≥ VIH tRC = tRC (min.) -50 -60 — — 120 110 mA ICC6 Refresh Current: RAS, CAS Cycling CBR(2,3,5) tRC = tRC (min.) Average Power Supply Current -50 -60 — — 120 110 mA ICCS Self Refresh Current 5V — 300 µA 3.3V — 300 µA Self Refresh Mode Speed Notes: 1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. Dependent on cycle rates. 3. Specified values are obtained with minimum cycle time and the output open. 4. Column-address is changed once each EDO page cycle. 5. Enables on-chip refresh and address counters. 6 Integrated Circuit Solution Inc. DR022-0A 08/20/2001 IC41C82002S IC41LV82002S AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol tRC tRAC tCAC tAA tRAS tRP tCAS tCP tCSH tRCD tASR tRAH tASC tCAH tAR tRAD tRAL tRPC tRSH tCLZ tCRP tOD tOE tOEHC tOEP tOES tRCS tRRH tRCH tWCH tWCR tWP tWPZ tRWL tCWL tWCS tDHR Parameter Random READ or WRITE Cycle Time Access Time from RAS(6, 7) Access Time from CAS(6, 8, 15) Access Time from Column-Address(6) RAS Pulse Width RAS Precharge Time CAS Pulse Width(23) CAS Precharge Time(9) CAS Hold Time (21) RAS to CAS Delay Time(10, 20) Row-Address Setup Time Row-Address Hold Time Column-Address Setup Time(20) Column-Address Hold Time(20) Column-Address Hold Time (referenced to RAS) RAS to Column-Address Delay Time(11) Column-Address to RAS Lead Time RAS to CAS Precharge Time RAS Hold Time CAS to Output in Low-Z(15, 24) CAS to RAS Precharge Time(21) Output Disable Time(19, 24) Output Enable Time(15, 16) OE HIGH Hold Time from CAS HIGH OE HIGH Pulse Width OE LOW to CAS HIGH Setup Time Read Command Setup Time(17, 20) Read Command Hold Time (referenced to RAS)(12) Read Command Hold Time (referenced to CAS)(12, 17, 21) Write Command Hold Time(17) Write Command Hold Time (referenced to RAS)(17) Write Command Pulse Width(17) WE Pulse Widths to Disable Outputs Write Command to RAS Lead Time(17) Write Command to CAS Lead Time(17, 21) Write Command Setup Time(14, 17, 20) Data-in Hold Time (referenced to RAS) Integrated Circuit Solution Inc. DR022-0A 08/20/2001 -50 Max. Min. -60 Max. 84 — — — 50 30 8 9 38 12 0 7 0 8 30 — 50 13 25 10K — 10K — — 37 — — — — — 104 — — — 60 40 10 9 40 14 0 10 0 10 40 — 60 15 30 10K — 10K — — 45 — — — — — ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 10 25 5 8 0 5 3 — 5 10 5 0 0 25 — — — — — 15 12 — — — — — 12 30 5 10 0 5 3 — 5 10 5 0 0 30 — — — — — 15 15 — — — — — ns ns ns ns ns ns ns ns ns ns ns ns ns 0 — 0 — ns 8 40 — — 10 50 — — ns ns 8 7 13 8 0 39 — — — — — — 10 7 15 10 0 39 — — — — — — ns ns ns ns ns ns Min. Units 7 IC41C82002S IC41LV82002S AC CHARACTERISTICS (Continued)(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol tACH Parameter tREF Column-Address Setup Time to CAS Precharge during WRITE Cycle OE Hold Time from WE during READ-MODIFY-WRITE cycle(18) Data-In Setup Time(15, 22) Data-In Hold Time(15, 22) READ-MODIFY-WRITE Cycle Time RAS to WE Delay Time during READ-MODIFY-WRITE Cycle(14) CAS to WE Delay Time(14, 20) Column-Address to WE Delay Time(14) EDO Page Mode READ or WRITE Cycle Time RAS Pulse Width in EDO Page Mode Access Time from CAS Precharge(15) EDO Page Mode READ-WRITE Cycle Time Data Output Hold after CAS LOW Output Buffer Turn-Off Delay from CAS or RAS(13,15,19, 24) Output Disable Delay from WE CAS Setup Time (CBR REFRESH)(20, 25) CAS Hold Time (CBR REFRESH)( 21, 25) OE Setup Time prior to RAS during HIDDEN REFRESH Cycle Auto Refresh Period 2,048 Cycles tT Transition Time (Rise or Fall)(2, 3) tOEH tDS tDH tRWC tRWD tCWD tAWD tPC tRASP tCPA tPRWC tCOH tOFF tWHZ tCSR tCHR tORD Min. -50 Max. Min. -60 Max. Units 15 — 15 — ns 8 — 10 — ns 0 8 108 64 — — — — 0 10 133 77 — — — — ns ns ns ns 26 39 20 — — — 32 47 25 — — — ns ns ns 50 — 56 100K 30 — 60 — 68 100K 35 — ns ns ns 5 0 — 12 5 0 — 15 ns ns 3 5 8 0 10 — — — 3 5 10 0 10 — — — ns ns ns ns — 32 — 32 ms 1 50 1 50 ns AC TEST CONDITIONS Output load: Two TTL Loads and 50 pF (Vcc = 5.0V + 10%) One TTL Load and 50 pF (Vcc = 3.3V + 10%) Input timing reference levels: VIH = 2.4V, VIL = 0.8V (Vcc = 5.0V + 10%) VIH = 2.0V, VIL = 0.8V (Vcc = 3.3V + 10%) Output timing reference levels: VOH = 2.0V, VOL = 0.8V (Vcc = 5.0V + 10%, 3.3V + 10%) 8 Integrated Circuit Solution Inc. DR022-0A 08/20/2001 IC41C82002S IC41LV82002S Notes: 1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs. 3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 4. If CAS and RAS = VIH, data output is High-Z. 5. If CAS = VIL, data output may contain data from the last valid READ cycle. 6. Measured with a load equivalent to one TTL gate and 50 pF. 7. Assumes that tRCD ≤ tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by the amount that tRCD exceeds the value shown. 8. Assumes that tRCD ≥ tRCD (MAX). 9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the data output buffer, CAS and RAS must be pulsed for tCP. 10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC. 11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA. 12. Either tRCH or tRRH must be satisfied for a READ cycle. 13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. 14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS ≥ tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD ≥ tRWD (MIN), tAWD ≥ tAWD (MIN) and tCWD ≥ tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle. 15. Output parameter (I/O) is referenced to corresponding CAS input. 16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a LATE WRITE or READ-MODIFY-WRITE is not possible. 17. Write command is defined as WE going low. 18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW and OE is taken back to LOW after tOEH is met. 19. The I/Os are in open during READ cycles once tOD or tOFF occur. 20. Determined by falling edge of CAS. 21. Determined by rising edge of CAS. 22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles. 23. CAS must meet minimum pulse width. 24. The 3 ns minimum is a parameter guaranteed by design. 25. Enables on-chip refresh and address counters. Integrated Circuit Solution Inc. DR022-0A 08/20/2001 9 IC41C82002S IC41LV82002S READ CYCLE Note: 1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last. 10 Integrated Circuit Solution Inc. DR022-0A 08/20/2001 IC41C82002S IC41LV82002S READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles) Integrated Circuit Solution Inc. DR022-0A 08/20/2001 11 IC41C82002S IC41LV82002S EARLY WRITE CYCLE (OE = DON'T CARE) 12 Integrated Circuit Solution Inc. DR022-0A 08/20/2001 IC41C82002S IC41LV82002S EDO-PAGE-MODE READ CYCLE Note: 1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications. Integrated Circuit Solution Inc. DR022-0A 08/20/2001 13 IC41C82002S IC41LV82002S EDO-PAGE-MODE EARLY-WRITE CYCLE 14 Integrated Circuit Solution Inc. DR022-0A 08/20/2001 IC41C82002S IC41LV82002S EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles) Note: 1. tPC is for LATE WRITE only. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications. Integrated Circuit Solution Inc. DR022-0A 08/20/2001 15 IC41C82002S IC41LV82002S EDO-PAGE-MODE READ-EARLY-WRITE CYCLE (Psuedo READ-MODIFY WRITE) tASC tASC READ CYCLE (With WE-Controlled Disable) Undefined Don’t Care 16 Integrated Circuit Solution Inc. DR022-0A 08/20/2001 IC41C82002S IC41LV82002S RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE) CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE) Integrated Circuit Solution Inc. DR022-0A 08/20/2001 17 IC41C82002S IC41LV82002S HIDDEN REFRESH CYCLE (WE = HIGH; OE = LOW) SELF REFRESH CYCLE (Addresses : WE and OE = DON'T CARE) 18 Integrated Circuit Solution Inc. DR022-0A 08/20/2001 IC41C82002S IC41LV82002S TIMING PARAMETERS Symbol -50 Min. Max. -60 Min. Max. tCHD tCP tCSR tRASS tRP tRPS tRPC 8 9 5 100 30 84 5 10 9 5 100 40 104 5 — — — — — — — — — — — — — — Units ns ns ns µs ns ns ns ORDERING INFORMATION Commercial Range: 0°C to 70°C Voltage: 5V Speed (ns) 50 50 60 60 Order Part No. IC41C82002S-50J IC41C82002S-50T IC41C82002S-60J IC41C82002S-60T Refresh Package 2K 2K 2K 2K 300mil SOJ 400mil TSOP-2 300mil SOJ 400mil TSOP-2 Refresh Package 2K 2K 2K 2K 300mil SOJ 400mil TSOP-2 300mil SOJ 400mil TSOP-2 Voltage: 3.3V Speed (ns) 50 50 60 60 Order Part No. IC41LV82002S-50J IC41LV82002S-50T IC41LV82002S-60J IC41LV82002S-60T Integrated Circuit Solution Inc. HEADQUARTER: NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, TAIWAN, R.O.C. TEL: 886-3-5780333 Fax: 886-3-5783000 BRANCH OFFICE: 7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD, HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. TEL: 886-2-26962140 FAX: 886-2-26962252 http://www.icsi.com.tw Integrated Circuit Solution Inc. DR022-0A 08/20/2001 19