AOSMD AO4443L P-channel enhancement mode field effect transistor Datasheet

AO4443
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4443 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4443 is Pb-free (meets ROHS & Sony 259
specifications). AO4443L is a Green Product
ordering option. AO4443 and AO4443L are
electrically identical.
VDS (V) = -40V
ID = -6.5 A (VGS = -10V)
RDS(ON) < 42mΩ (VGS = -10V)
RDS(ON) < 63mΩ (VGS = -4.5V)
D
SOIC-8
Top View
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±20
V
-20
3.1
W
2
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
-5
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
-6.5
TA=25°C
Power Dissipation A
Maximum
-40
RθJA
RθJL
Typ
24
54
21
Max
40
75
30
Units
°C/W
°C/W
°C/W
AO4443
P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-40
-1
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-20
±100
nA
-3
V
33.3
42
54
68
VGS=-4.5V, I D=-5A
48
63
VDS=-5V, ID=-6A
14
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
µA
-1.9
VGS=-10V, I D=-6A
Coss
Units
V
TJ=55°C
IGSS
IS
Max
VDS=-32V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-20V, I D=-6A
A
-0.75
mΩ
mΩ
S
-1
V
-6
A
657
pF
143
pF
63
pF
6.5
Ω
14.2
nC
7.1
nC
2.2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
4.1
nC
tD(on)
Turn-On DelayTime
7.7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=-10V, VDS=-20V, RL=3.7Ω,
RGEN=3Ω
8
ns
26.5
ns
11.5
ns
Body Diode Reverse Recovery Time
IF=-6A, dI/dt=100A/µs
21.9
Body Diode Reverse Recovery Charge
IF=-6A, dI/dt=100A/µs
14.9
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any agiven
givenapplication
applicationdepends
dependson
onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon
onthe
thet≤t≤10s
10sthermal
thermalresistance
resistancerating.
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4443
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
-10V
25
-5.0V
-4.5V
25
15
-ID(A)
-ID (A)
-4.0V
-6.0V
20
VDS=-5V
20
-3.5V
15
10
125°C
10
VGS=-3.0V
25°C
5
5
0
0
0
1
2
3
4
1
5
1.5
2.5
3
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
60
1.8
Normalized On-Resistance
55
50
RDS(ON) (mΩ)
2
VGS=-4.5V
45
40
35
VGS=-10V
30
25
20
0
2
4
6
8
1.6
VGS=-10V
ID=-6A
1.4
VGS=-4.5V
ID=-5A
1.2
1
0.8
10
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
140
120
1.0E+00
100
1.0E-01
80
-IS (A)
RDS(ON) (mΩ)
ID=-6A
125°C
60
1.0E-02
1.0E-03
1.0E-04
25°C
40
125°C
25°C
1.0E-05
20
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
1.0E-06
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4443
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1000
VDS=-40V
ID=-6A
800
Capacitance (pF)
-VGS (Volts)
8
Ciss
6
4
600
400
Coss
Crss
200
2
0
0
0
3
6
9
12
0
15
10
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
40
RDS(ON)
limited
1ms
10ms
1.0
0.1s
1s
10s
40
TJ(Max)=150°C
TA=25°C
20
10
DC
0
0.001
0.1
0.1
30
30
10µs
100µs
Power (W)
-ID (Amps)
TJ(Max)=150°C, TA=25°C
10.0
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
Similar pages