MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G Switch Mode Power Rectifier These state−of−the−art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full−wave bridge. www.onsemi.com ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS Features • • • • • • • • • • • Common Anode Dual Rectifier (8.0 A per Leg or 16 A per Package) Ultrafast 35 Nanosecond Reverse Recovery Times Exhibits Soft Recovery Characteristics High Temperature Glass Passivated Junction Low Leakage Specified @ 150°C Case Temperature Current Derating @ Both Case and Ambient Temperatures Epoxy Meets UL 94 V−0 @ 0.125 in Complement to MUR1620CT and MURB1620CT Common Cathode Device ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 16,000 V) NRVU Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices* TO−220AB CASE 221A STYLE 7 D2PAK CASE 418AJ 1 2, 4 3 MARKING DIAGRAMS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: MUR1620CTR: 1.9 Grams (Approximately) MURB1620CTR: 1.7 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal AYWW U1620RG KAK AYWW U1620RG KAK Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220AB D2PAK U1620R = Device Code KAK = Diode Polarity A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 9 1 Publication Order Number: MUR1620CTR/D MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (Rated VR, TC = 160°C) Per Leg Per Total Device IF(AV) A 8.0 16 Peak Repetitive Surge Current (Rated VR, Square Wave, 20 kHz, TC = 140°C) Per Diode IFM A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A TJ, Tstg −65 to +175 °C 16 Operating Junction and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Per Leg) Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient (D2PAK) Symbol Value Unit RqJC 2.0 °C/W RqJA 45 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 8.0 Amps, TC = 25°C) (iF = 8.0 Amps, TC = 150°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 150°C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/ms) trr V 1.2 1.1 mA 5.0 500 ns 85 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. ORDERING INFORMATION Package Shipping† MUR1620CTRG TO−220 (Pb−Free) 50 Units / Rail MURB1620CTRG D2PAK−3 (Pb−Free) 50 Units / Rail MURB1620CTRT4G D2PAK−3 (Pb−Free) 800 / Tape & Reel NRVUB1620CTRT4G D2PAK−3 (Pb−Free) 800 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G 100 70 50 30 20 10 7.0 TJ = 175°C 150°C 100°C * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 25°C 0 20 5.0 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* (Per Leg) 150°C 3.0 100°C IF(AV), AVERAGE FORWARD CURRENT (AMPS) 2.0 25°C 1.0 0.7 0.5 0.3 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 16 14 RATED VR APPLIED 12 RqJC = 2°C/W 10 8.0 dc SQUARE WAVE 6.0 4.0 2.0 0 140 150 160 170 vF, INSTANTANEOUS VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) Figure 1. Typical Forward Voltage (Per Leg) Figure 3. Current Derating, Case (Per Leg) PF(AV), AVERAGE POWER DISSIPATION (WATTS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) TJ = 175°C IR, REVERSE CURRENT (mA) 1000 500 200 100 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 16 TJ = 175°C 14 12 SQUARE WAVE 10 8.0 dc 6.0 4.0 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Power Dissipation (Per Leg) www.onsemi.com 3 16 180 MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.5 0.1 0.2 0.05 0.1 ZqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 P(pk) 0.01 0.05 t1 t2 SINGLE PULSE 0.02 DUTY CYCLE, D = t1/t2 TJ(pk) − TC = P(pk) ZqJC(t) 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t, TIME (ms) Figure 5. Thermal Response 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 PULSE TIME (sec) Figure 6. Thermal Response, Junction−to−Ambient 1000 900 800 C, CAPACITANCE (pF) 0.001 700 600 500 400 300 200 100 0 0.1 0.2 0.3 0.5 0.7 1.0 0.2 0.3 0.5 0.7 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance (Per Leg) www.onsemi.com 4 20 30 50 70 100 1000 MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE B B E2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CHAMFER OPTIONAL 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.005 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AT DATUM H. 5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN DIMENSIONS E, L1, D1 AND E1. 6. OPTIONAL MOLD FEATURE A A E SEATING PLANE L1 c2 NOTE 3 A D1 L1 D H DETAIL C E1 0.10 M B A M L2 A e c NOTE 6 2X TOP VIEW b 0.10 VIEW A−A SIDE VIEW M B A M H GAUGE PLANE L3 A1 L M B SEATING PLANE DIM A A1 b c c2 D D1 E E1 e H L L1 L2 L3 M DETAIL C RECOMMENDED SOLDERING FOOTPRINT* VIEW A−A OPTIONAL CONSTRUCTIONS 0.436 0.366 0.653 2X 0.169 2X 0.063 0.100 PITCH DIMENSIONS: INCHES *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 INCHES MIN MAX 0.160 0.190 0.000 0.010 0.020 0.039 0.012 0.029 0.045 0.065 0.330 0.380 0.260 −−−− 0.380 0.420 0.245 −−−− 0.100 BSC 0.575 0.625 0.070 0.110 −−−− 0.066 −−−− 0.070 0.010 BSC 0° 8° MILLIMETERS MIN MAX 4.06 4.83 0.00 0.25 0.51 0.99 0.30 0.74 1.14 1.65 8.38 9.65 6.60 −−−− 9.65 10.67 6.22 −−−− 2.54 BSC 14.60 15.88 1.78 2.79 −−−− 1.68 −−−− 1.78 0.25 BSC 0° 8° MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 7: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 CATHODE ANODE CATHODE ANODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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