CYStech Electronics Corp. Spec. No. : C024F3 Issued Date : 2018.03.14 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE014N15RF3 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A Features 150V 94A 14.4mΩ (typ) • Low Gate Charge • Simple Drive Requirement • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package Symbol Outline TO-263 MTE014N15RF3 G：Gate D：Drain S：Source G D S Ordering Information Device Package Shipping TO-263 MTE014N15RF3-0-T7-X 800 pcs / Tape & Reel (Pb-free lead plating and RoHS compliant package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE014N15RF3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C024F3 Issued Date : 2018.03.14 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C (silicon limit) Continuous Drain Current @VGS=10V, TC=125°C(silicon limit) Continuous Drain Current @VGS=10V, TC=25°C (package limit) Pulsed Drain Current (Note 1) Avalanche Current @L=0.1mH Avalanche Energy @ L=5mH, ID=20A, VDD=25V (Note 2) Repetitive Avalanche Energy@ L=0.05mH Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=100℃) Operating Junction and Storage Temperature VDS VGS 150 ±20 94 66.5 60 320 85 1000 37.5 375 187 2.4 1.2 -55~+175 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C Note : 1. Pulse width limited by maximum junction temperature 2. 100% tested by conditions of L=0.1mH, IAS=12A, VGS=10V, VDD=25V Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 0.4 62.5 Unit °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd MTE014N15RF3 Min. Typ. Max. Unit Test Conditions 150 2.0 - 0.1 28.2 14.4 4.0 ±100 1 25 19.5 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=20A VGS=±20V, VDS=0V VDS =120V, VGS =0V VDS =100V, VGS =0V, Tj=125°C VGS =10V, ID=20A - 62.8 17.2 15.9 - μA mΩ nC ID=20A, VDS=75V, VGS=10V CYStek Product Specification CYStech Electronics Corp. *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 33 27 65.4 13.4 3798 240 12 1.5 - 0.78 72 212 94 320 1.2 - Spec. No. : C024F3 Issued Date : 2018.03.14 Revised Date : Page No. : 3/9 ns VDS=75V, ID=20A, VGS=10V, RG=1Ω pF VGS=0V, VDS=75V, f=1MHz Ω f=1MHz A V ns nC IS=10A, VGS=0V IF=10A, VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTE014N15RF3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C024F3 Issued Date : 2018.03.14 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 ID, Drain Current(A) 180 10V 9V 8V 7V 160 140 BVDSS, Normalized Drain-Source Breakdown Voltage 200 6V 120 100 80 5V 60 40 VGS=4V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 4.5V 20 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VSD, Source-Drain Voltage(V) VGS=10V 10 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.1 1 10 ID, Drain Current(A) 100 0 2 4 6 8 10 12 14 16 IDR , Reverse Drain Current(A) 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.8 R DS(ON) , Normalized Static DrainSource On-State Resistance 100 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 90 ID=20A 80 70 60 50 40 30 20 10 2.4 VGS=10V, ID=20A 2 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 14.4mΩ typ. 0 0 0 MTE014N15RF3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C024F3 Issued Date : 2018.03.14 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 10 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 1 0 10 20 30 40 50 60 VDS, Drain-Source Voltage(V) 70 -75 -50 -25 80 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Pulsed Ta=25°C 0.01 0.001 VDS=30V, 75V, 120V from left to right 8 6 4 2 ID=20A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 7 14 21 28 35 42 49 56 Total Gate Charge---Qg(nC) 63 70 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 100 1000 100 90 10 μs RDS(ON) Limited ID, Maximum Drain Current(A) ID, Drain Current(A) 0 100μs 1ms 10 10ms TC=25°C, Tj=175°C, VGS=10V,RθJC=0.4°C/W single pulse 1 100ms DC silicon limit 80 70 60 package limit 50 40 30 20 VGS=10V, RθJC=0.4°C/W 10 0 0.1 0.1 MTE014N15RF3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C024F3 Issued Date : 2018.03.14 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 5000 200 4500 VDS=10V Peak Transient Power (W) 180 ID, Drain Current (A) 160 140 120 100 80 60 40 TJ(MAX) =175°C TC=25°C RθJC=0.4°C/W 4000 3500 3000 2500 2000 1500 1000 500 20 0 0 1 2 3 4 5 6 7 8 9 0 0.0001 10 0.001 VGS, Gate-Source Voltage(V) 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=0.4 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTE014N15RF3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C024F3 Issued Date : 2018.03.14 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE014N15RF3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C024F3 Issued Date : 2018.03.14 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE014N15RF3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C024F3 Issued Date : 2018.03.14 Revised Date : Page No. : 9/9 TO-263 Dimension Marking : Device Name E014 N15R Date Code □□□□ 1 2 3 Style : Pin 1.Gate 2.Drain 3.Source 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 Date Code : (From left to right) First Code : Year code, the last digit of Christinr year. For example, 2014→4, 2015→, 2016→6, …, etc. Second Code : Month code, Jan→A, Feb→B, Mar→C, Apr→D, May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M Third and fourth codes : production serial number, 01~99 DIM A A1 B b b1 c c1 D E Millimeters Min. Max. 4.470 4.670 0.000 0.150 1.120 1.420 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.500 8.900 Inches Min. 0.176 0.000 0.044 0.028 0.046 0.012 0.046 0.394 0.335 Max. 0.184 0.006 0.056 0.036 0.054 0.021 0.054 0.406 0.350 DIM e e1 L L1 L2 L3 Φ V Millimeters Min. Max. 2.540 TYP 4.980 5.180 14.940 15.500 4.950 5.450 2.340 2.740 1.300 1.700 Inches Min. Max. 0.100 TYP 0.196 0.204 0.588 0.610 0.195 0.215 0.092 0.108 0.051 0.067 0° 8° 6.400 REF 0° 8° 0.253 REF Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE014N15RF3 CYStek Product Specification