AP4503AGM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH
D2
D2
▼ Low On-resistance
D1
D1
▼ Fast Switching Performance
G2
S2
SO-8
S1
P-CH
G1
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
BVDSS
30V
RDS(ON)
28mΩ
ID
6.9A
BVDSS
-30V
RDS(ON)
36mΩ
ID
-6.3A
D1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D2
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Total Power Dissipation
TSTG
TJ
-30
V
±20
V
6.9
-6.3
A
3
5.5
-5
A
20
-20
A
1
PD@TA=25℃
30
±20
Continuous Drain Current
Pulsed Drain Current
P-channel
3
Continuous Drain Current
IDM
Units
2
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
201126071
AP4503AGM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
Typ.
Max.
Units
30
-
-
V
VGS=10V, ID=6A
-
-
28
mΩ
VGS=4.5V, ID=4A
-
-
42
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS=0V, ID=250uA
2
VGS(th)
Min.
VDS=10V, ID=6A
-
6
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (T j=70 C)
VDS=24V ,VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Qg
Total Gate Charge2
ID=6A
-
8.4
13.5
nC
Qgs
Gate-Source Charge
VDS=24V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.7
-
nC
IDSS
Drain-Source Leakage Current (T j=25 C)
2
td(on)
Turn-on Delay Time
VDS=20V
-
5
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.5
-
ns
tf
Fall Time
RD=20Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
485
770
pF
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Min.
Typ.
Max.
Units
IS=1.7A, VGS=0V
-
-
1.2
V
IS=6A, VGS=0V,
-
19
-
ns
dI/dt=100A/µs
-
11
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
2
AP4503AGM
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
Typ.
Max.
Units
-30
-
-
V
VGS=-10V, ID=-6A
-
-
36
mΩ
VGS=-4.5V, ID=-4A
-
-
55
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-6A
-
6
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (T j=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Drain-Source Leakage Current (T j=25 C)
IGSS
Min.
VGS=0V, ID=-250uA
2
VGS(th)
IDSS
Test Conditions
2
Qg
Total Gate Charge
ID=-6A
-
12.4
20
nC
Qgs
Gate-Source Charge
VDS=-24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
34
-
ns
tf
Fall Time
RD=15Ω
-
26
-
ns
Ciss
Input Capacitance
VGS=0V
-
860
1380
pF
Coss
Output Capacitance
VDS=-25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Min.
Typ.
Max.
Units
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-6A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3
AP4503AGM
N-Channel
40
40
T A =25 ℃
ID , Drain Current (A)
30
ID , Drain Current (A)
T A =150 ℃
10V
7.0V
5.0V
4.5V
20
V G =3.0V
10
10V
7.0V
5.0V
4.5V
30
20
V G =3.0V
10
0
0
0
1
2
3
0
4
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
34
1.8
I D =6A
V G =10V
I D = 4A
o
T A = 25 C
Normalized R DS(ON)
RDS(ON0 (m Ω)
30
26
1.4
1.0
22
30
18
-30
0.6
2
4
6
8
10
-50
50
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
8
1.2
Normalized VGS(th) (V)
10
T j =25 o C
o
T j =150 C
0
o
V GS , Gate-to-Source Voltage (V)
IS(A)
6
4
2
1.0
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4503AGM
N-Channel
f=1.0MHz
1000
C iss
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
ID=6A
V DS = 24 V
6
C oss
C rss
100
4
2
10
0
0
3
6
9
12
15
1
18
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (R thja)
1
10
100us
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=135 oC/W
Single Pulse
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4503AGM
P-Channel
40
40
o
T A =25 C
20
30
-ID , Drain Current (A)
-ID , Drain Current (A)
30
- 10V
- 7.0V
- 5.0V
- 4.5V
T A = 150 o C
- 10V
- 7.0V
- 5.0V
- 4.5V
V G = - 3 .0V
10
20
V G = - 3 .0V
10
0
0
0
1
2
3
4
5
0
6
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
50
I D = -6 A
V G = - 10V
I D = -4 A
o
T A =25 C
Normalized R DS(ON)
RDS(ON) (m Ω)
1.4
40
30
1.2
1.0
0.8
30
-30
0.6
20
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.2
Normalized -VGS(th) (V)
-IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.0
0.8
2
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4503AGM
P-Channel
f=1.0MHz
10000
12
I D = -6A
V DS = -24V
1000
C iss
9
C (pF)
-VGS , Gate to Source Voltage (V)
15
C oss
C rss
6
100
3
10
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
1
28.0
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (R thja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
100us
1ms
1
10ms
100ms
0.1
o
1s
DC
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
30
-30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
4503AGM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
8