CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN2N65CJ3 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=1A 650V 2A 1.3A 4.5Ω(typ) Applications • Open Framed Power Supply • Adapter • STB Symbol Outline TO-252(DPAK) MTN2N65CJ3 G：Gate D：Drain S：Source G D S Ordering Information Device MTN2N65CJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN2N65CJ3 CYStek Product Specification Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current 2.0 ID 1.3 Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) IDM 8.0 Single Pulse Avalanche Current (Note 2) IAS 2 Single Pulse Avalanche Energy @L=2mH, VGS=10V, VDD= 50V (Note 2) EAS 4 Repetitive Avalanche Energy (Note 1) EAR 2 Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) TL 300 from case for 10 seconds Total Power Dissipation (TA=25℃) 1.14 P D Total Power Dissipation (TC=25℃) 44 0.35 Linear Derating Factor Operating Junction and Storage Temperature Tj, Tstg -55~+150 V A mJ °C W W W/°C °C Note : 1.Pulse width limited by maximum junction temperature. 2.100% testsed by conditions of IAS=1A, VDD=50V, L=2mH, VGS=10V, starting TJ=+25℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN2N65CJ3 Symbol RθJC RθJA Value 2.8 110 Unit °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 650 2.0 - 0.7 2.3 4.5 4.0 ±100 1 10 5.8 V V/°C V S nA Ω VGS=0V, ID=250μA, Tj=25℃ Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=1A VGS=±30V VDS =650V, VGS =0V VDS =520V, VGS =0V, TC=125°C VGS =10V, ID=1A 7.8 2.3 2.4 5.4 3.2 8.6 5.6 268 32 11 3.7 11.7 10.8 6.4 17.2 11.2 402 48 16 - nC ID=2A, VDD=520V, VGS=10V ns VDD=325V, ID=1.8A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz Ω f=1MHz 0.8 286 760 2 8 1.5 - Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA A V ns nC IS=1A, VGS=0V VGS=0V, IF=1.8A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTN2N65CJ3 CYStek Product Specification Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.2 4 BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current(A) 10V,9V,8V,7V,6V,5.5V 3 2 5V 4.5V 1 VGS=4V 10 20 30 40 VDS, Drain-Source Voltage(V) 1 0.9 0.8 ID=250μA, VGS=0V 0.7 0.6 0 0 1.1 -75 50 -50 4 10 TA=25°C 3.5 VGS=10V 8 ID, Drain Current(A) R DS(on), Static Drain-Source On-State Resistance(Ω) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 6 4 VDS=30V 3 2.5 2 1.5 VDS=10V 1 2 0.5 0 0 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 VGS, Gate-Source Voltage(V) 10 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 10 10 Ta=25°C VGS=0V 8 IF, Forward Current(A) R DS(on) , Static Drain-Source OnState Resistance(Ω) -25 6 4 ID=1A 2 1 Tj=150°C 0.1 Tj=25°C 0.01 0.001 0 0 MTN2N65CJ3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Source Drain Voltage(V) CYStek Product Specification Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Capacitance vs Reverse Voltage Static Drain-Source On-resistance vs Ambient Temperature 1000 RDS(on) , Normalized Static Drain-Source On-state Resistance 3.2 Capacitance-(pF) Ciss 100 Coss 10 Crss f=1MHz 1 2.8 2.4 2 1.6 1.2 0.8 ID=1A, VGS=10V 0.4 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage(V) 30 -75 -50 -25 Gate Charge Characteristics Maximum Safe Operating Area 10 10 100μs 1ms 10ms 1 100ms 1s DC Operation in this area is limited by RDS(ON) 0.1 VDS=130V VGS, Gate-Source Voltage(V) ID, Drain Current(A) 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) 8 VDS=325V 6 VDS=520V 4 2 ID=1.8A 0 0.01 1 10 100 VDS, Drain-Source Voltage(V) 0 1000 2 4 6 8 10 Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Threshold Voltage vs Junction Tempearture VGS(th), Normalized Threshold Voltage ID, Maximum Drain Current(A) 2.5 2 1.5 1 0.5 VGS=10V, RθJC=2.8°C/W 0 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 25 50 75 100 125 TC, Case Temperature(°C) MTN2N65CJ3 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Forward Transfer Admittance vs Drain Current 3500 3000 TJ(MAX) =150°C TC=25°C RθJC=2.8°C/W 2500 Power (W) GFS , Forward Transfer Admittance(S) 10 2000 1500 1000 500 0 0.000 0.001 1 0.01 0.1 1 10 100 1000 1 0.1 VDS=15V Ta=25°C Pulsed 0.01 0.001 0.01 0.1 ID, Drain Current(A) Pulse Width(s) 1 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.8°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTN2N65CJ3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTN2N65CJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN2N65CJ3 CYStek Product Specification Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name CYS 2N65C Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2N65CJ3 CYStek Product Specification