Vishay GI250-4HE3/73 High voltage glass passivated junction rectifier Datasheet

GI250-1 thru GI250-4
Vishay General Semiconductor
High Voltage Glass Passivated Junction Rectifier
FEATURES
®
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low leakage current
d*
e
t
n
e
Pat
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
• High forward surge capability
• Meets environmental standard MIL-S-19500
DO-204AL (DO-41)
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
0.25 A
VRRM
1000 V to 4000 V
IFSM
15 A
IR
5.0 µA
VF
3.5 V
TJ max.
175 °C
TYPICAL APPLICATIONS
For use in rectification of high voltage power supplies,
inverters, converters and freewheeling diodes
application.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GI250-1
GI250-2
GI250-3
GI250-4
UNIT
Maximum repetitive peak reverse voltage
VRRM
1000
2000
3000
4000
V
Maximum RMS voltage
VRMS
700
1400
2100
2800
V
Maximum DC blocking voltage
VDC
1000
2000
3000
4000
V
Maximum average forward rectified current 0.375" (9.5 mm) lead
length at TA = 75 °C
IF(AV)
0.25
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
15
A
TJ, TSTG
- 65 to + 175
°C
Operating junction and storage temperature range
Document Number: 88625
Revision: 03-Apr-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
GI250-1 thru GI250-4
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage
SYMBOL
0.25 A
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 100 °C
GI250-1
GI250-2
GI250-3
GI250-4
UNIT
VF
3.5
V
IR
5.0
50
µA
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
2.0
µs
Typical junction capacitance
4.0 V, 1 MHz
CJ
3.0
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
GI250-1
GI250-2
RθJA
GI250-3
GI250-4
130
UNIT
°C/W
Note:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GI250-4E3/54
0.339
54
5500
13" diameter paper tape and reel
GI250-4E3/73
0.339
73
3000
Ammo pack packaging
GI250-4HE3/54 (1)
0.339
54
5500
13" diameter paper tape and reel
GI250-4HE3/73 (1)
0.339
73
3000
Ammo pack packaging
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
15
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
0.25
0.2
0.15
0.1
60 Hz Resistive
or Inductive Load
0.375" (9.5 mm) Lead Length
0.05
0
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
10
5
0
0
25
50
75
100
125
150
175
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88625
Revision: 03-Apr-08
GI250-1 thru GI250-4
Vishay General Semiconductor
6.0
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
1.0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
5.0
4.0
3.0
2.0
1.0
0
2.0
3.0
4.0
5.0
6.0
7.0
0.1
8.0
1
100
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
Instantaneous Reverse Current (µA)
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number: 88625
Revision: 03-Apr-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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