BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications 2nd LNA stage and mixer stage in DBS LNB’s Low noise amplifiers for microwave communications systems Ka band oscillators DRO’s Low current battery equipped applications Microwave driver / buffer applications Wi-Fi / WLAN / WiMAX GPS RKE AMR ZigBee LTE, cellular, UMTS SDARS first stage LNA FM radio Mobile TV Bluetooth BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 10 V VCEO collector-emitter voltage open base - - 2.8 V VEBO emitter-base voltage open collector - - 1.0 V IC collector current - 5 30 mA - - 197 mW Ptot total power dissipation Tsp ≤ 90 °C hFE DC current gain IC = 2 mA; VCE = 2 V; Tj = 25 °C 205 380 555 CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 55 - fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C - 55 - GHz Gp(max) maximum power gain IC = 17 mA; VCE = 2 V; f = 12 GHz; Tamb = 25 °C - 12.5 - dB NF noise figure IC = 5 mA; VCE = 2 V; f = 12 GHz; ΓS = Γopt - 1.30 - dB PL(1dB) output power at 1 dB gain compression IC = 15 mA; VCE = 2.5 V; ZS = ZL = 50 Ω; f = 5.8 GHz; Tamb = 25 °C - 12.5 - dBm [1] [2] [1] Tsp is the temperature at the solder point of the emitter lead. [2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG). 2. Pinning information Table 2. Discrete pinning Pin Description 1 emitter 2 base 3 emitter 4 collector Simplified outline 3 Graphic symbol 4 4 2 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number BFU730F BFU730F Product data sheet Package Name Description Version - plastic surface-mounted flat pack package; reverse pinning; 4 leads SOT343F All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 © NXP B.V. 2011. All rights reserved. 2 of 12 BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor 4. Marking Table 4. Marking Type number Marking Description BFU730F D6* * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 10 V VCEO collector-emitter voltage open base - 2.8 V VEBO emitter-base voltage open collector - 1.0 V IC collector current - 30 mA - 197 mW Tsp ≤ 90 °C [1] Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C [1] Tsp is the temperature at the solder point of the emitter lead. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Typ Unit 304 K/W 001aam852 250 Ptot (mW) 200 150 100 50 0 0 40 80 120 160 Tsp (°C) Fig 1. BFU730F Product data sheet Power derating curve All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 © NXP B.V. 2011. All rights reserved. 3 of 12 BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5 μA; IE = 0 mA 10 - V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA - 2.8 - - V - 5 30 mA IE = 0 mA; VCB = 4.5 V - - 100 nA DC current gain IC = 2 mA; VCE = 2 V 205 380 555 IC collector current ICBO collector-base cut-off current hFE CCES collector-emitter capacitance VCB = 2 V; f = 1 MHz - 206 - fF CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz - 442 - fF CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 55 - fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C - 55 - GHz Gp(max) maximum power gain IC = 17 mA; VCE = 2 V; Tamb = 25 °C f = 1.5 GHz - 29 - dB f = 1.8 GHz - 28 - dB f = 2.4 GHz - 26.5 - dB f = 5.8 GHz - 18.5 - dB f = 12 GHz - 12.5 - dB f = 1.5 GHz - 27 - dB f = 1.8 GHz - 25.5 - dB f = 2.4 GHz - 23.5 - dB f = 5.8 GHz - 16 - dB f = 12 GHz - 10.5 - dB f = 1.5 GHz - 0.50 - dB f = 1.8 GHz - 0.50 - dB f = 2.4 GHz - 0.55 - dB f = 5.8 GHz - 0.80 - dB f = 12 GHz - 1.30 - dB f = 1.5 GHz - 25.0 - dB f = 1.8 GHz - 23.5 - dB f = 2.4 GHz - 21.5 - dB f = 5.8 GHz - 15.0 - dB f = 12 GHz - 11.0 - dB |s21|2 NF Gass insertion power gain noise figure associated gain BFU730F Product data sheet [1] IC = 17 mA; VCE = 2 V; Tamb = 25 °C IC = 5 mA; VCE = 2 V; ΓS = Γopt; Tamb = 25 °C IC = 5 mA; VCE = 2 V; ΓS = Γopt; Tamb = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 © NXP B.V. 2011. All rights reserved. 4 of 12 BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions PL(1dB) output power at 1 dB gain compression IC = 15 mA; VCE = 2.5 V; ZS = ZL = 50 Ω; Tamb = 25 °C IP3 [1] Min Typ Max Unit f = 1.5 GHz - 12.5 - dBm f = 1.8 GHz - 12 - dBm f = 2.4 GHz - 11.5 - dBm f = 5.8 GHz - 12.5 - dBm f = 1.5 GHz - 26.5 - dBm f = 1.8 GHz - 26.5 - dBm f = 2.4 GHz - 26.5 - dBm f = 5.8 GHz - 29 - dBm IC = 20 mA; VCE = 2.5 V; ZS = ZL = 50 Ω; Tamb = 25 °C third-order intercept point Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG. 001aam853 30 (1) IC (mA) 001aam854 500 hFE (2) 400 (3) (4) 20 (5) 300 (6) (7) 200 (8) 10 (9) 100 (10) 0 0 0 1 2 3 0 10 VCE (V) 20 30 IC (mA) Tamb = 25 °C. VCE = 2 V; Tamb = 25 °C. (1) IB = 100 μA (2) IB = 90 μA (3) IB = 80 μA (4) IB = 70 μA (5) IB = 60 μA (6) IB = 50 μA (7) IB = 40 μA (8) IB = 30 μA (9) IB = 20 μA (10) IB = 10 μA Fig 2. Collector current as a function of collector-emitter voltage; typical values BFU730F Product data sheet Fig 3. DC current gain as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 © NXP B.V. 2011. All rights reserved. 5 of 12 BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor 001aam855 80 001aam856 60 CCBS (fF) fT (GHz) 60 40 40 20 20 0 0 0 1 2 3 4 0 10 20 30 40 VCB (V) f = 1 MHz, Tamb = 25 °C. Fig 4. 50 IC (mA) VCE = 2 V; f = 2 GHz; Tamb = 25 °C. Collector-base capacitance as a function of collector-base voltage; typical values Fig 5. Transition frequency as a function of collector current; typical values 001aam857 30 (1) G (dB) (2) MSG (3) 20 Gp(max) (4) (5) 10 0 0 10 20 30 40 50 IC (mA) VCE = 2 V; Tamb = 25 °C. (1) f = 1.5 GHz (2) f = 1.8 GHz (3) f = 2.4 GHz (4) f = 5.8 GHz (5) f = 12 GHz Fig 6. Gain as a function of collector current; typical value BFU730F Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 © NXP B.V. 2011. All rights reserved. 6 of 12 BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor 001aam858 50 001aam859 50 G (dB) G (dB) 40 40 30 30 MSG 20 MSG 20 Gp(max) IS21I2 Gp(max) IS21I2 10 MSG 10 MSG 0 0 0 5 10 15 20 25 0 5 10 15 20 f (GHz) VCE = 2 V; IC = 5 mA; Tamb = 25 °C. Fig 7. VCE = 2 V; IC = 17 mA; Tamb = 25 °C. Gain as a function of frequency; typical values 001aam860 2.0 25 f (GHz) Fig 8. Gain as a function of frequency; typical values 001aam861 2.0 NFmin (dB) NFmin (dB) 1.5 (1) 1.5 1.0 (2) 1.0 (3) (4) (5) 0.5 0.5 0 0 0 5 10 15 0 2 4 6 8 10 12 f (GHz) IC (mA) VCE = 2 V; Tamb = 25 °C. 14 IC = 5 mA; VCE = 2 V; Tamb = 25 °C. (1) f = 12 GHz (2) f = 5.8 GHz (3) f = 2.4 GHz (4) f = 1.8 GHz (5) f = 1.5 GHz Fig 9. Minimum noise figure as a function of collector current; typical values BFU730F Product data sheet Fig 10. Minimum noise figure as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 © NXP B.V. 2011. All rights reserved. 7 of 12 BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max bp b1 c D E e e1 HE Lp w y mm 0.75 0.65 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.48 0.38 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-07-12 06-03-16 SOT343F Fig 11. Package outline SOT343F BFU730F Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 © NXP B.V. 2011. All rights reserved. 8 of 12 BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor 9. Abbreviations Table 8. Abbreviations Acronym Description AMR Automatic Meter Reading DBS Direct Broadcast Satellite DC Direct Current DRO Dielectric Resonator Oscillator FM Frequency Modulation GPS Global Positioning System Ka Kurtz above LNA Low Noise Amplifier LNB Low Noise Block LTE Long Term Evolution NPN Negative-Positive-Negative RF Radio Frequency RKE Remote Keyless Entry SDARS Satellite Digital Audio Radio Service UMTS Universal Mobile Telecommunications System WiMAX Worldwide Interoperability for Microwave Access WLAN Wireless Local Area Network 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BFU730F v.1 20110429 Product data sheet - - BFU730F Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 © NXP B.V. 2011. All rights reserved. 9 of 12 BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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All rights reserved. 10 of 12 BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BFU730F Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 April 2011 © NXP B.V. 2011. All rights reserved. 11 of 12 BFU730F NXP Semiconductors NPN wideband silicon germanium RF transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 April 2011 Document identifier: BFU730F