HANBit HMF51232M4Y FLASH-ROM MODULE 2MByte (512K x 32-Bit) Part No. HMF51232M4Y GENERAL DESCRIPTION The HMF51232M4Y is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit configuration. The module consists of four 512Kx 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition, the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. PIN ASSIGNMENT FEATURES w Access time : 55,70, 90 and 120ns PIN SYMBOL PIN SYMBOL PIN SYMBOL w High-density 2MByte design 1 Vss 25 Vcc 49 DQ17 w High-reliability, low-power design 2 A3 26 DQ8 50 DQ18 w Single + 5V ± 0.5V power supply 3 A2 27 DQ9 51 DQ22 w Easy memory expansion 4 A1 28 DQ10 52 DQ21 wAll inputs and outputs are TTL- 5 A0 29 /CE_LM2 53 DQ20 compatible 6 Vcc 30 Vcc 54 DQ19 w FR4-PCB design 7 A11 31 NC 55 Vcc w Low profile 72-pin SIMM 8 /OE 32 DQ15 56 A15 w Minimum 1,000,000 write/erase cycle 9 A10 33 DQ14 57 A12 w Sector erases architecture 10 Vcc 34 DQ13 58 A7 w Sector group protection 11 /CE_LL2 35 DQ12 59 Vcc w Temporary sector group unprotection 12 NC 36 DQ11 60 A8 13 DQ7 37 A18 61 A9 14 DQ0 38 A16 62 DQ24 15 DQ1 39 Vss 63 DQ25 16 DQ2 40 A6 64 DQ26 17 DQ6 41 Vcc 65 /CE_UU2 18 DQ5 42 A5 66 NC 19 DQ4 43 A4 67 DQ31 20 DQ3 44 Vcc 68 DQ30 21 /WE 45 /CE_UM2 69 DQ29 22 A17 46 NC 70 DQ28 23 A14 47 DQ23 71 DQ27 24 A13 48 DQ16 72 Vss OPTIONS MARKING w Timing 55ns access - 55 70ns access - 70 90ns access - 90 120ns access - 120 w Package 72-pin SIMM M 72-PIN SIMM TOP VIEW FUNCTIONAL BLOCK DIAGRAM URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit HMF51232M4Y DQ0 - DQ31 A0 - A18 32 19 A0-18 DQ 0-7 /WE U1 /OE /CE /CE_LL2 A0-18 /WE DQ 8-15 U2 /OE /CE /CE_LM2 A0-18 /WE DQ16-23 U3 /OE /CE /CE_UM2 A0-18 /WE /WE /OE /OE DQ24-31 U4 /CE /CE_UU2 TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Dout ACTIVE WRITE X L L Din ACTIVE Note : X means don't care URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit HMF51232M4Y ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Storage Temperature TSTG -65oC to +125oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ±5% device Supply Voltages VCC 4.75V 5.25V Vcc for ± 10% device Supply Voltages Vcc 4.5V 5.5V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, VIN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL Vcc Active Current for Read(1) /CE = VIL, /OE=VIH, ICC1 /CE = VIL, /OE=VIH /CE= VIH 2.4 V 0.45 V 80 120 mA ICC2 120 160 mA ICC3 4 20 mA VLKO 3.2 4.2 V Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF51232M4Y ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. COMMENTS MAX. Excludes 00H programming Sector Erase Time - 1 8 sec prior to erasure Excludes system-level Byte Programming Time - 7 300 us overhead Excludes system-level Chip Programming Time - 3.6 10.8 sec overhead CAPACITANCE PARAMETER PARAMETER SYMBOL CIN TEST SETUP TYP. MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF DESCRIPTION Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes : Test conditions TA = 25o C, f=1.0 MHz. TEST CONDITIONS TEST CONDITION -55 Output load ALL OTHERS UNIT 1 TTL gate Output load Capacitance, CL 30 100 pF Input Rise and Fall Times 5 20 ns Input Pulse Levels 0~3 0.45~2.4 V Input timing measurement reference levels 1.5 0.8 V Output timing measurement reference levels 1.5 2.0 V URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF51232M4Y AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS tRC -55 TEST -70 -90 -120 UNIT DESCRIPTION SETUP MIN Read Cycle Time MAX MIN 55 tACC /CE = VIL MAX MIN 70 55 MAX MIN 90 MAX 120 ns 70 Address to Output Delay 90 120 ns /OE = VIL tCE Chip Enable to Output Delay tOE Chip Enable to Output Delay tDF Chip Enable to Output High-Z tDF Output Enable to Output High-Z /OE = VIL 55 70 90 120 ns 30 30 35 50 ns 0 0 18 0 20 Output Hold Time From 0 ns 20 35 ns 0 ns 0 Addresses, 0 tQH 0 /CE or /OE, Whichever Occurs First 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER -55 -70 -90 -120 DESCRIPTION SYMBOLS UNIT MIN TYP MAX MIN 90 MIN MAX Write Cycle Time tAS Address Setup Time tAH Address Hold Time 40 45 45 50 ns tDS Data Setup Time 25 30 45 50 ns REV.02(August,2002) 70 MAX tWC URL: www.hbe.co.kr 55 MIN 120 0 5 ns ns HANBit Electronics Co., Ltd. HANBit HMF51232M4Y tDH Data Hold Time 0 ns tOES Output Enable Setup Time 0 ns Read Recover Time Before Write 0 ns tCS /CE Setup Time 0 ns tCH /CE Hold Time 0 ns tWP Write Pulse Width tWPH Write Pulse Width High 20 ns tWHWH1 Byte Programming Operation 7 µs tWHWH2 Sector Erase Operation (Note1) 1 sec Vcc set up time 50 µs tGHWL tVCS 30 35 45 50 ns Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER -55 -70 -90 -120 DESCRIPTION SYMBOLS UNIT MIN TYP MIN 55 ns 70 MAX MIN MIN MAX tWC Write Cycle Time tAS Address Setup Time tAH Address Hold Time 40 ns 45 45 50 ns tDS Data Setup Time 25 ns 30 45 50 ns tDH Data Hold Time 0 ns Read Recover Time Before Write 0 ns tWS /WE Setup Time 0 ns tWH /WE Hold Time 0 ns tCP /CE Pulse Width tCPH /CE Pulse Width High 20 ns tWHWH1 Byte Programming Operation 7 µs tWHWH2 Sector Erase Operation (Note) 1 sec tGHEL 90 MAX 120 ns 0 30 ns 35 ns 45 50 ns Notes : This does not include the preprogramming time. URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF51232M4Y u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF51232M4Y u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF51232M4Y u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF51232M4Y u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF51232M4Y PACKAGE DIMENSIONS 2.54 mm MIN 0.25 mm MAX 1.27±0.08mm Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm 1.27 (Solder & Gold Plating) ODERING INFORMATION Part Number Density Org. Package HMF51232M4Y-55 2MByte 512K×32bit 72 Pin-SIMM HMF51232M4Y-70 2MByte 512K×32bit HMF51232M4Y-90 2MByte HMF51232M4Y-120 2MByte URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 4EA 5.0V 55ns 72 Pin-SIMM 4EA 5.0V 70ns 512K×32bit 72 Pin-SIMM 4EA 5.0V 90ns 512K×32bit 72 Pin-SIMM 4EA 5.0V 120ns 11 Number HANBit Electronics Co., Ltd.