MMBT2222 MMBT2222 NPN General Purpose Amplifier • Sourced from process 19. C E B SOT-23 Mark: 1B Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Ratings 30 Units V VCBO VEBO Collector-Base Voltage 60 V Emitter-Base Voltage 5.0 IC Collector Current V 0.6 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C - Continuous * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 ICBO Collector Cutoff Current VCB = 50V, IE = 0 VCB = 50V, IE = 0, Ta = 125°C 10 10 µA µA IEBO Emitter Cutoff Current VEB = 3.0V, IC = 0 10 nA V On Characteristics hFE DC Current Gain IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1.0V * IC = 500mA, VCE = 10V * 35 50 75 100 50 30 300 VCE(sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15V IC = 500mA, IB = 50V 0.4 1.6 V VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15V IC = 500mA, IB = 50V 1.3 2.6 V ©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 Ta=25°C unless otherwise noted Symbol Parameter Small Signal Characteristics Test Condition Min. Max. Units fT Curent Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 250 8.0 pF Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 30 pF VCC = 30V, VBE(OFF) = 0.5V, IC = 150mA, IB1 = 15mA 10 ns 25 ns 225 ns 60 ns Switching Characteristics td Delay Time tr Rise Time ts Storage Time tf Fall Time VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD Parameter Total Device Dissipation Derate above 25°C Max. 350 2.8 Units mW mW/°C RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”. ©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 MMBT2222 Electrical Characteristics (Continued) MMBT2222 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11