Advance Technical Information IXYH40N65B3D1 IXYQ40N65B3D1 XPTTM 650V IGBT GenX3TM w/ Diode VCES = IC110 = VCE(sat) tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 650V 40A 2.0V 73ns TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 86 40 50 195 A A A A IA EAS TC = 25°C TC = 25°C 20 300 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 80 @VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 5 μs PC TC = 25°C 300 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6.0 5.5 g g = 25°C = 110°C = 110°C = 25°C, 1ms Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-247 TO-3P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES 650 = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V G C E G = Gate E = Emitter VCE = 0V, VGE = 20V VCE(sat) IC 3.5 = 40A, VGE = 15V, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved Tab C = Collector Tab = Collector 6.0 V 10 A 1.5 mA 100 1.7 2.0 2.0 Optimized for Low 5-30kHz Switching Square RBSOA Anti-Parallel Fast Diode Avalanche Rated Short Circuit Capability Advantages High Power Density Extremely Rugged Low Gate Drive Requirement Applications V TJ = 150C IGES Tab E TO-3P (IXYQ) IC C Features TJ TJM Tstg TL TSOLD G nA V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100630(9/14) IXYH40N65B3D1 IXYQ40N65B3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 16 IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 40A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 RthJC RthCS TO-247 Outline 27 S 1880 210 43 pF pF pF 68 10 33 nC nC nC 20 37 0.80 140 73 0.70 ns ns mJ ns ns mJ 1.25 20 37 1.60 176 174 1.15 ns ns mJ ns ns mJ 0.25 0.50 °C/W °C/W 1 2 P 3 e Terminals: 1 - Gate 3 - Emitted Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 30A, VGE = 0V, Note 1 Irr trr IF = 30A, VGE = 0V, -diF/dt = 500A/μs, VR = 400V Characteristic Values Min. Typ. Max. TJ = 150°C 1.2 2.5 V V TJ = 150°C TJ = 150°C 24 125 A ns RthJC 0.60 °C/W 1 = Gate 3 = Emitter Notes: 2,4 = Collector 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH40N65B3D1 IXYQ40N65B3D1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 80 280 VGE = 15V 13V 12V 11V 70 60 VGE = 15V 240 14V 200 10V 13V 40 I C (A) I C (A) 50 9V 160 12V 120 11V 30 8V 9V 40 10 7V 0 0 0.5 1 1.5 2 2.5 8V 7V 0 3 0 5 10 15 20 25 VCE (V) VCE (V) Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 2.0 VGE = 15V 13V 12V 11V 60 30 VGE = 15V 1.8 I C = 80A VCE(sat) - Normalized 70 10V 50 I C (A) 10V 80 20 9V 40 30 8V 1.6 1.4 I C = 40A 1.2 1.0 20 7V 0.8 10 I C = 20A 6V 0.6 0 0 0.5 1 1.5 2 2.5 3 -50 3.5 -25 0 25 75 100 125 150 TJ (ºC) VCE (V) Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6 50 Fig. 6. Input Admittance 90 TJ = 25ºC 80 5 70 I C (A) V CE (V) 60 4 I C = 80A 50 40 3 TJ = 150ºC 25ºC 30 40A - 40ºC 20 2 10 20A 1 0 7 8 9 10 11 12 VGE - (V) © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 VGE (V) 8 9 10 175 IXYH40N65B3D1 IXYQ40N65B3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 40 16 TJ = - 40ºC VCE = 325V 14 30 25ºC 12 25 150ºC 10 VGE (V) g f s (S) 35 20 I C = 40A I G = 10mA 8 15 6 10 4 5 2 0 0 0 10 20 30 40 50 60 70 80 90 0 100 10 20 30 50 60 70 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 90 10,000 f = 1 MHz 80 Cies 70 60 1,000 I C (A) Capacitance (pF) 40 QG (nC) I C (A) Coes 100 50 40 30 Cres 20 TJ = 150ºC 10 RG = 10Ω dv / dt < 10V / ns 10 0 0 5 10 15 20 25 30 35 40 100 200 300 400 VCE (V) 500 600 700 VCE (V) Fig. 12. Maximum Transient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 100 10 I D (A) 100µs 1 1ms 0.01 DC TC = 25ºC Single Pulse 0.01 1 0.1 10ms TJ = 175ºC 0.1 Z (th)JC (ºC / W) 25µs 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 IXYH40N65B3D1 IXYQ40N65B3D1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 3.2 Eoff 2.8 Eon - --- 7 3.2 6 2.8 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Eoff VCE = 400V 3.0 1.6 3 1.2 2 2.5 1.6 2.0 TJ = 150ºC 1.2 1.5 0.8 1.0 TJ = 25ºC I C = 30A 0.8 0.4 10 15 20 25 30 35 40 45 50 1 0.4 0 0.0 0.5 0.0 15 55 20 25 30 35 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff VCE = 400V 1.4 2.5 1.2 2.0 1.0 1.5 100 160 280 140 240 160 80 120 10 15 20 25 30 tfi 200 180 td(off) - - - - 260 200 240 180 tfi 120 160 100 140 TJ = 25ºC 120 60 100 40 80 35 50 55 40 45 I C (A) © 2014 IXYS CORPORATION, All Rights Reserved 50 55 240 220 60 200 140 180 I C = 30A 120 160 I C = 60A 100 140 80 120 60 100 40 25 50 75 100 TJ (ºC) 125 80 150 t d(off) (ns) 180 t f i (ns) TJ = 150ºC 30 td(off) - - - - VCE = 400V 160 200 t d(off) (ns) t f i (ns) 220 140 25 45 RG = 10Ω , VGE = 15V VCE = 400V 20 40 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature RG = 10Ω , VGE = 15V 15 35 RG (Ω) Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 80 200 I C = 60A TJ (ºC) 160 320 I C = 30A 100 0.0 150 125 400 360 180 0.5 0.4 440 VCE = 400V 1.0 0.6 220 60 td(off) - - - - 120 I C = 30A 75 55 t d(off) (ns) 3.0 E on (mJ) 1.6 50 50 TJ = 150ºC, VGE = 15V 200 3.5 0.8 tfi 220 4.0 I C = 60A 1.8 25 45 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 240 4.5 ---- RG = 10Ω , VGE = 15V 2.0 Eoff (mJ) Eon 5.0 t f i (ns) 2.2 40 I C (A) RG (Ω) 2.4 E on (mJ) 4 E off (mJ) 2.0 I C = 60A Eon (mJ) E off (mJ) 3.5 VCE = 400V 2.4 5 2.0 ---- RG = 10Ω , VGE = 15V TJ = 150ºC , VGE = 15V 2.4 Eon 4.0 IXYH40N65B3D1 IXYQ40N65B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri 160 100 100 td(on) - - - - tri 90 TJ = 150ºC, VGE = 15V 140 50 I C = 30A 60 40 40 30 20 20 0 10 10 15 20 25 30 35 40 45 50 32 tri 140 td(on) - - - - 30 RG = 10Ω , VGE = 15V 28 VCE = 400V 100 26 80 24 60 22 40 t d(on) (ns) I C = 60A 20 I C = 30A 18 0 50 75 20 15 10 20 25 30 35 40 I C (A) 160 25 20 15 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 20 40 0 55 RG (Ω) 120 25 t r i (ns) 80 60 60 100 125 16 150 TJ (ºC) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 45 50 55 60 t d(on) (ns) 100 30 VCE = 400V TJ = 25ºC, 150ºC t d(on) (ns) t r i (ns) td(on) - - - - 70 I C = 60A 35 RG = 10Ω , VGE = 15V 80 80 VCE = 400V 120 t r i (ns) Fig. 20. Inductive Turn-on Switching Times vs. Collector Current IXYH40N65B3D1 IXYQ40N65B3D1 Fig. 23. Reverse Recovery Charge vs. -diF/dt Fig. 22. Diode Forward Characteristics 80 2.2 70 2.0 60 IF = 60A VR = 400V 1.8 TJ = 150ºC 30A QRR (µC) 50 I F (A) TVJ = 150ºC TJ = 25ºC 40 1.6 1.4 30 15A 1.2 20 1.0 10 0.8 0 0 0.5 1 1.5 2 200 2.5 300 400 500 600 700 800 900 -diF/ dt (A/µs) VF (V) Fig. 24. Reverse Recovery Current vs. -diF/dt Fig. 25. Reverse Recovery Time vs. -diF/dt 220 34 TVJ = 150ºC 32 TVJ = 150ºC 200 VR = 400V 30 IF = 60A VR = 400V 30A 28 180 15A tRR (ns) I RR (A) 26 24 22 160 IF = 60A 140 20 30A 120 18 15A 16 100 14 12 200 80 300 400 500 600 700 800 900 200 300 400 Fig. 26. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.2 500 600 700 800 900 -diF/dt (A/µs) diF/dt (A/µs) Fig. 27. Maximum Transient Thermal Impedance (Diode) 1 VR = 400V 1.0 I F = 30A -dIF /dt = 500 A/µs Z (th)JC (ºC / W) KF 0.8 0.6 0.4 KF IRR 0.1 KF QRR 0.2 0.0 0 20 40 60 80 100 TJ (ºC) © 2014 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) IXYS REF: IXY_40N65B3D1(51) 9-11-14