MC33275, NCV33275 300 mA, Low Dropout Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223, SOP−8, DPAK, and DFN 4x4 surface mount packages. These devices feature a very low quiescent current and are capable of supplying output currents up to 300 mA. Internal current and thermal limiting protection are provided by the presence of a short circuit at the output and an internal thermal shutdown circuit. Due to the low input−to−output voltage differential and bias current specifications, these devices are ideally suited for battery powered computer, consumer, and industrial equipment where an extension of useful battery life is desirable. www.onsemi.com LOW DROPOUT MICROPOWER VOLTAGE REGULATOR MARKING DIAGRAMS Features • Low Input−to−Output Voltage Differential of 25 mV at IO = 10 mA, • • • • • and 260 mV at IO = 300 mA Extremely Tight Line and Load Regulation Stable with Output Capacitance of only 0.33 F for 2.5 V Output Voltage Internal Current and Thermal Limiting NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices 4 1 3 1 8 SOIC−8 D SUFFIX CASE 751 8 1 Applications 4 • Battery Powered Consumer Products • Hand−Held Instruments • Camcorders and Cameras 1 2 Vin 3 Vout 1 Thermal & Anti−sat Protection 275xx ALYWG G 1 275xxG ALYWW DPAK DT SUFFIX CASE 369C DFN−8, 4x4 MN SUFFIX CASE 488AF 1 275xx ALYWG G xx = Voltage Version A = Assembly Location L = Wafer Lot Y = Year W, WW = Work Week G or G = Pb−Free Device (Note: Microdot may be in either location) Rint 1.23 V V. Ref. 54 K AYW 275xxG G SOT−223 ST SUFFIX CASE 318E GND ORDERING INFORMATION This device contains 41 active transistors See detailed ordering and shipping information on page 10 of this data sheet. Figure 1. Simplified Block Diagram © Semiconductor Components Industries, LLC, 2015 March, 2015 − Rev. 20 1 Publication Order Number: MC33275/D MC33275, NCV33275 PIN CONNECTIONS GND GND 4 4 Input GND 1 2 3 Vin GND Vout MC33275ST GND 1 2 3 VinGND Vout MC33275DT N/C 1 ÇÇ ÇÇ ÇÇ 8 Output 7 GND 6 GND 5 N/C 2 3 4 Input Input Input N/C Pins 4 and 5 Not Connected MC33275D 1 2 3 4 Ç Ç Ç 8 7 6 5 Output N/C GND N/C MC33275MN MAXIMUM RATINGS Rating Symbol Value Unit VCC 13 Vdc PD Internally Limited W RJA RJC 160 25 °C/W °C/W RJA RJC 245 15 °C/W °C/W RJA RJC 92 6.0 °C/W °C/W RJA RJA psi−JC* 183 93 9.0 °C/W °C/W °C/W Output Current IO 300 mA Maximum Junction Temperature TJ 150 °C Operating Ambient Temperature Range TA − 40 to +125 °C Storage Temperature Range Tstg − 65 to +150 °C Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) ESD Input Voltage Power Dissipation and Thermal Characteristics TA = 25°C Maximum Power Dissipation Case 751 (SOIC−8) D Suffix Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Case 318E (SOT−223) ST Suffix Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Case 369A (DPAK−3) DT Suffix Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Case 488AF (DFN−8, 4x4) MN Suffix Thermal Resistance, Junction−to−Air (with 1.0 oz PCB cu area) Thermal Resistance, Junction−to−Air (with 1.8 oz PCB cu area) Thermal Resistance, Junction−to−Case 4000 400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *“C’’ (“case’’) is defined as the solder−attach interface between the center of the exposed pad on the bottom of the package, and the board to which it is attached. www.onsemi.com 2 MC33275, NCV33275 ELECTRICAL CHARACTERISTICS (CL = 1.0F, TA = 25°C, for min/max values TJ = −40°C to +125°C, Note 1) Symbol Characteristic Output Voltage 2.5 V Suffix 3.0 V Suffix 3.3 V Suffix 5.0 V Suffix IO = 0 mA to 250 mA TA = 25°C, Vin = [VO + 1] V VO Min Typ Max 2.475 2.970 3.267 4.950 2.50 3.00 3.30 5.00 2.525 3.030 3.333 5.05 2.450 2.940 3.234 4.900 − − − − 2.550 3.060 3.366 5.100 Unit Vdc 2.5 V Suffix 3.0 V Suffix 3.3 V Suffix 5.0 V Suffix Vin = [VO + 1] V, 0 < IO < 100 mA 2% Tolerance from TJ = −40 to +125°C Line Regulation Vin = [VO + 1] V to 12 V, IO = 250 mA, All Suffixes TA = 25°C Regline − 2.0 10 mV Load Regulation Vin = [VO + 1] V, IO = 0 mA to 250 mA, All Suffixes TA = 25°C Regload − 5.0 25 mV − − − − 25 115 220 260 100 200 400 500 65 75 − − − 160 46 − − − 125 200 − − − 1500 1500 1500 2000 2000 2000 Dropout Voltage IO = 10 mA IO = 100 mA IO = 250 mA IO = 300 mA Vin − VO TJ = −40°C to +125°C Ripple Rejection (120 Hz) Vin(peak−peak) = [VO + 1.5] V to [VO + 5.5] V Output Noise Voltage CL = 1.0 F IO = 50 mA (10 Hz to 100 kHz) CL = 200 F − Vn mV dB Vrms CURRENT PARAMETERS Quiescent Current ON Mode Vin = [VO + 1] V, IO = 0 mA IQOn Quiescent Current ON Mode SAT 3.0 V Suffix 3.3 V Suffix 5.0 V Suffix Vin = [VO − 0.5] V, IO = 0 mA (Notes 2, 3) IQSAT Current Limit Vin = [VO + 1] V, VO Shorted ILIMIT − 450 − mA − − 150 − °C A A THERMAL SHUTDOWN Thermal Shutdown Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible. 2. Quiescent Current is measured where the PNP pass transistor is in saturation. Vin = [VO − 0.5] V guarantees this condition. 3. For 2.5 V version, IQSAT is constrained by the minimum input voltage of 2.5 V. www.onsemi.com 3 MC33275, NCV33275 DEFINITIONS Load Regulation − The change in output voltage for a change in load current at constant chip temperature. Dropout Voltage − The input/output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 100 mV below its nominal value (which is measured at 1.0 V differential), dropout voltage is affected by junction temperature, load current and minimum input supply requirements. Output Noise Voltage − The RMS AC voltage at the output with a constant load and no input ripple, measured over a specified frequency range. Maximum Power Dissipation − The maximum total dissipation for which the regulator will operate within specifications. Quiescent Current − Current which is used to operate the regulator chip and is not delivered to the load. Line Regulation − The change in output voltage for a change in the input voltage. The measurement is made under conditions of low dissipation or by using pulse techniques such that the average chip temperature is not significantly affected. Maximum Package Power Dissipation − The maximum package power dissipation is the power dissipation level at which the junction temperature reaches its maximum value i.e. 150°C. The junction temperature is rising while the difference between the input power (VCC X ICC) and the output power (Vout X Iout) is increasing. Depending on ambient temperature, it is possible to calculate the maximum power dissipation and so the maximum current as following: T * T A Pd + J R JA The maximum operating junction temperature TJ is specified at 150°C, if TA = 25°C, then PD can be found. By neglecting the quiescent current, the maximum power dissipation can be expressed as: I out + P D V * Vout CC The thermal resistance of the whole circuit can be evaluated by deliberately activating the thermal shutdown of the circuit (by increasing the output current or raising the input voltage for example). Then you can calculate the power dissipation by subtracting the output power from the input power. All variables are then well known: power dissipation, thermal shutdown temperature and ambient temperature. R www.onsemi.com 4 JA T * T A + J P D MC33275, NCV33275 7 150 TA = 25° C 6 CL = 33 F IL = 10 mA 5 Vout = 3.3 V 100 4 50 3 0 2 Vout -50 1 0 0 20 40 60 80 100 120 140 160 70 60 Vin Vin , INPUT VOLTAGE (V) Vin 200 40 4 30 3 20 10 2 0 Vout 1 0 50 100 Figure 3. Line Transient Response 1.0 300 0 -300 Vout CHANGE -400 CL = 1.0 F Vout = 3.3 V -500 TA = 25° C -600 Vin = 4.3 V 0 50 -0.2 -0.4 -0.6 -0.8 100 150 200 300 250 350 LOAD CURRENT (mA) LOAD CURRENT (mA) 0.2 LOAD CURRENT 150 -50 0.04 -150 -0.01 -250 -350 CL = 33.0 F Vout = 3.3 V TA = 25° C Vin = 4.3 V Vout CHANGE -450 -550 -0.06 -0.11 -650 -750 -1.0 400 -0.16 0 50 TIME (S) 100 150 200 250 300 TIME (S) Figure 5. Load Transient Response Figure 4. Load Transient Response 300 3.5 3.0 IL = 1 mA 2.5 DROPOUT VOLTAGE (mV) OUTPUT VOLTAGE (V) 0.09 50 OUTPUT VOLTAGE CHANGE (V) 0.4 -200 0.14 250 0.6 OUTPUT VOLTAGE CHANGE (V) LOAD CURRENT -100 -700 350 0.8 0 -20 200 150 TIME (S) Figure 2. Line Transient Response 100 -10 0 -100 180 200 TIME (S) 200 50 OUTPUT VOLTAGE CHANGE (mV) TA = 25° C 6 CL = 0.47 F IL = 10 mA 5 Vout = 3.3 V OUTPUT VOLTAGE CHANGE (mV) Vin , INPUT VOLTAGE (V) 7 IL = 250 mA 2.0 1.5 1.0 250 200 150 100 50 0.5 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 4.5 5.0 10 100 1000 INPUT VOLTAGE (V) IO, OUTPUT CURRENT (mA) Figure 6. Output Voltage versus Input Voltage Figure 7. Dropout Voltage versus Output Current www.onsemi.com 5 MC33275, NCV33275 12 250 10 IL = 300 mA 8 200 Ignd (mA) DROPOUT VOLTAGE (mV) 300 IL = 250 mA 150 IL = 100 mA 100 50 4 0 IL = 100 mA 2 IL = 10 mA 0 -40 IL = 300 mA 6 IL = 50 mA 25 0 85 0 1 2 3 TEMPERATURE (°C) 4 5 6 7 8 Vin (VOLTS) Figure 9. Ground Pin Current versus Input Voltage Figure 8. Dropout Voltage versus Temperature 2.5 8 7 IL = 250 mA IO = 0 2.495 Vout (VOLTS) Ignd (mA) 6 5 4 3 IL = 100 mA 2.49 IO = 250 mA 2.485 2.48 2 IL = 50 mA 1 0 -40 -20 0 20 40 60 80 100 120 2.475 2.47 -40 140 0 25 TA (°C) TEMPERATURE (°C) Figure 10. Ground Pin Current versus Ambient Temperature Figure 11. Output Voltage versus Ambient Temperature (Vin = Vout + 1V) www.onsemi.com 6 85 MC33275, NCV33275 2.5 IO = 0 2.495 Vout (VOLTS) 2.49 IO = 250 mA 2.485 2.48 2.475 2.47 2.465 -40 0 25 85 TEMPERATURE (°C) Figure 12. Output Voltage versus Ambient Temperature (Vin = 12 V) 70 60 IL = 10 mA dB 50 IL = 1 mA 40 30 20 10 0 0.1 1 10 100 FREQUENCY (kHz) Figure 13. Ripple Rejection 70 60 IL = 100 mA dB 50 IL = 250 mA 40 30 20 10 0 0.1 1 10 FREQUENCY (kHz) Figure 14. Ripple Rejection www.onsemi.com 7 100 MC33275, NCV33275 APPLICATIONS INFORMATION Vout Vin Cin Cout LOAD GND Figure 15. Typical Application Circuit The MC33275 regulators are designed with internal current limiting and thermal shutdown making them user−friendly. Figure 15 is a typical application circuit. The output capability of the regulator is in excess of 300 mA, with a typical dropout voltage of less than 260 mV. Internal protective features include current and thermal limiting. ESR (ohm) 100 EXTERNAL CAPACITORS Vout = 3.0 V Cout = 1.0 F Cin = 1.0 F 10 Stable Region 1.0 These regulators require only a 0.33 F (or greater) capacitance between the output and ground for stability for 1.8 V, 2.5 V, 3.0 V, and 3.3 V output voltage options. Output voltage options of 5.0 V require only 0.22 F for stability. The output capacitor must be mounted as close as possible to the MC33275. If the output capacitor must be mounted further than two centimeters away, then a larger value of output capacitor may be required for stability. A value of 0.68 F or larger is recommended. Most type of aluminum, tantalum, or multilayer ceramic will perform adequately. Solid tantalums or appropriate multilayer ceramic capacitors are recommended for operation below 25°C. An input bypass capacitor is recommended to improve transient response or if the regulator is connected to the supply input filter with long wire lengths, more than 4 inches. This will reduce the circuit’s sensitivity to the input line impedance at high frequencies. A 0.33 F or larger tantalum, mylar, ceramic, or other capacitor having low internal impedance at high frequencies should be chosen. The bypass capacitor should be mounted with shortest possible lead or track length directly across the regulator’s input terminals. Figure 16 shows the ESR that allows the LDO to remain stable for various load currents. 0.1 0 50 100 150 200 250 300 LOAD CURRENT (mA) Figure 16. ESR for Vout = 3.0V Applications should be tested over all operating conditions to insure stability. THERMAL PROTECTION Internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated, typically at 150°C, the output is disabled. There is no hysteresis built into the thermal protection. As a result the output will appear to be oscillating during thermal limit. The output will turn off until the temperature drops below the 150°C then the output turns on again. The process will repeat if the junction increases above the threshold. This will continue until the existing conditions allow the junction to operate below the temperature threshold. Thermal limit is not a substitute for proper heatsinking. The internal current limit will typically limit current to 450 mA. If during current limit the junction exceeds 150°C, the thermal protection will protect the device also. Current limit is not a substitute for proper heatsinking. OUTPUT NOISE In many applications it is desirable to reduce the noise present at the output. Reducing the regulator bandwidth by increasing the size of the output capacitor will reduce the noise. www.onsemi.com 8 RJA, THERMAL RESISTANCE, JUNCTION−TO−AIR (°CW) 180 1.6 160 1.4 PD(max) for TA = 50°C 140 ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ 2.0 oz. Copper L Minimum Size Pad 120 L 100 80 60 RJA 0 5.0 10 15 20 25 L, LENGTH OF COPPER (mm) 1.2 1.0 0.8 0.6 0.4 30 PD, MAXIMUM POWER DISSIPATION (W) MC33275, NCV33275 RJA, THERMAL RESISTANCE, JUNCTION−TO−AIR (°CW) 100 1.6 PD(max) for TA = 50°C 1.4 90 2.0 oz. Copper L ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 80 Minimum Size Pad 70 1.0 L 60 0.8 50 0.6 RJA 40 1.2 0 5.0 10 15 20 0.4 30 25 PD, MAXIMUM POWER DISSIPATION (W) Figure 17. SOT−223 Thermal Resistance and Maximum Power Dissipation versus P.C.B. Copper Length L, LENGTH OF COPPER (mm) 3.2 170 150 PD(max) for TA = 50°C 2.8 130 2.4 110 Graph Represents Symmetrical Layout 2.0 ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ 90 70 30 0 10 3.0 mm L RJA 50 1.6 2.0 oz. Copper L 20 30 40 1.2 0.8 0.4 50 L, LENGTH OF COPPER (mm) Figure 19. SOP−8 Thermal Resistance and Maximum Power Dissipation versus P.C.B. Copper Length www.onsemi.com 9 PD, MAXIMUM POWER DISSIPATION (W) RJA, THERMAL RESISTANCE, JUNCTION−TO−AIR (°CW) Figure 18. DPAK Thermal Resistance and Maximum Power Dissipation versus P.C.B. Copper Length MC33275, NCV33275 ORDERING INFORMATION Operating Temperature Range, Tolerance Case Package Marking Shipping† MC33275D−2.5G 751 SOIC−8 (Pb−Free) 27525 98 Units/Rail MC33275D−2.5R2G 751 SOIC−8 (Pb−Free) 27525 2500/Tape & Reel 369A DPAK (Pb−Free) 27525G 75 Units/Rail 369A DPAK (Pb−Free) 27525G 2500/Tape & Reel 488AF DFN8 (Pb−Free) 27525 3000/Tape & Reel 318E SOT−223 (Pb−Free) 27525 4000/Tape & Reel 751 SOIC−8 (Pb−Free) 27530 98 Units/Rail 751 SOIC−8 (Pb−Free) 27530 2500/Tape & Reel 369A DPAK (Pb−Free) 27530G 75 Units/Rail 369A DPAK (Pb−Free) 27530G 2500/Tape & Reel MC33275MN−3.0R2G 488AF DFN8 (Pb−Free) 27530 3000/Tape & Reel MC33275ST−3.0T3G 318E SOT−223 (Pb−Free) 27530 4000/Tape & Reel 751 SOIC−8 (Pb−Free) 27533 98 Units/Rail 751 SOIC−8 (Pb−Free) 27533 2500/Tape & Reel 369A DPAK (Pb−Free) 27533G 75 Units/Rail 369A DPAK (Pb−Free) 27533G 2500/Tape & Reel 318E SOT−223 (Pb−Free) 27533 4000/Tape & Reel 318E SOT−223 (Pb−Free) 27533 4000/Tape & Reel 488AF DFN−8 (Pb−Free) 27330 3000/Tape & Reel 751 SOIC−8 (Pb−Free) 27550 98 Units/Rail 751 SOIC−8 (Pb−Free) 27550 2500/Tape & Reel 369A DPAK (Pb−Free) 27550G 75 Units/Rail 369A DPAK (Pb−Free) 27550G 2500/Tape & Reel 488AF DFN−8 (Pb−Free) 27550 3000/Tape & Reel MC33275ST−5.0T3G 318E SOT−223 (Pb−Free) 27550 4000/Tape & Reel NCV33275ST−5.0T3G* 318E SOT−223 (Pb−Free) 27550 4000/Tape & Reel Device VO Typ (V) MC33275DT−2.5G MC33275DT−2.5RKG 2.5 V (Fixed Voltage) 1% Tolerance at TA = 25°C MC33275MN−2.5R2G MC33275ST−2.5T3G MC33275D−3.0G MC33275D−3.0R2G 2% Tolerance at TJ from −40°C to +125°C MC33275DT−3.0G MC33275DT−3.0RKG 3.0 V (Fixed Voltage) MC33275D−3.3G MC33275D−3.3R2G 1% Tolerance at TA = 25°C MC33275DT−3.3G MC33275DT−3.3RKG 3.3 V (Fixed Voltage) MC33275ST−3.3T3G 2% Tolerance at TJ from −40°C to +125°C 1% Tolerance at TA = 25°C NCV33275ST3.3T3G* MC33275MN−3.3R2G MC33275D−5.0G 1% Tolerance at TA = 25°C MC33275D−5.0R2G MC33275DT−5.0G MC33275DT−5.0RKG MC33275MN−5.0R2G 5.0 V (Fixed Voltage) 2% Tolerance at TJ from −40°C to +125°C 1% Tolerance at TA = 25°C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable www.onsemi.com 10 MC33275, NCV33275 PACKAGE DIMENSIONS SOT−223 (TO−261) ST SUFFIX CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A DIM A A1 b b1 c D E e e1 L L1 HE q L MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − L1 SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 mm Ǔ 1.5 ǒinches SCALE 6:1 0.059 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° MC33275, NCV33275 PACKAGE DIMENSIONS SOIC−8 NB D SUFFIX CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 12 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 MC33275, NCV33275 PACKAGE DIMENSIONS 8 PIN DFN, 4x4 MN SUFFIX CASE 488AF ISSUE C A B D PIN ONE REFERENCE 2X 0.15 C 2X 0.15 C 0.10 C 8X 0.08 C NOTE 4 ÉÉ ÉÉ ÉÉ L L1 DETAIL A E OPTIONAL CONSTRUCTIONS EXPOSED Cu DETAIL B ÇÇÇÇ (A3) A A1 ÇÇÇÇ 1 ÉÉ ÉÉ ÇÇ A1 C 8X SEATING PLANE ALTERNATE CONSTRUCTIONS 5 DIM A A1 A3 b D D2 E E2 e K L L1 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.25 0.35 4.00 BSC 1.91 2.21 4.00 BSC 2.09 2.39 0.80 BSC 0.20 −−− 0.30 0.50 −−− 0.15 SOLDERING FOOTPRINT* L 2.21 4 ÇÇÇÇ 8 e MOLD CMPD A3 DETAIL B D2 K ÇÇÇ ÉÉÉ TOP VIEW SIDE VIEW DETAIL A NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. DETAILS A AND B SHOW OPTIONAL CONSTRUCTIONS FOR TERMINALS. L 8X 0.63 E2 8X 4.30 2.39 b 0.10 C A B 0.05 C PACKAGE OUTLINE NOTE 3 BOTTOM VIEW 8X 0.80 PITCH 0.35 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 13 MC33275, NCV33275 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE E A E b3 B c2 4 L3 D 1 L4 C A 2 3 NOTE 7 b2 e b TOP VIEW Z Z H DETAIL A c SIDE VIEW 0.005 (0.13) M BOTTOM VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW ALTERNATE CONSTRUCTION H C L2 GAUGE PLANE C L L1 DETAIL A SEATING PLANE A1 ROTATED 905 CW INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 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