Spec. No. : C736Q8 Issued Date : 2017.09.12 Revised Date : 2017.09.29 Page No. : 1/9 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB025P03KQ8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free lead plating package Equivalent Circuit BVDSS -30V ID@ TA=25°C, VGS=-10V -7.6A ID@ TA=70°C, VGS=-10V RDSON@VGS=-10V, ID=-6A -6.1A 24.0mΩ(typ.) RDSON@VGS=-4.5V, ID=-5A 44.5mΩ(typ.) Outline MTB025P03KQ8 D D SOP-8 D D G G：Gate S：Source D：Drain Pin 1 S S S Ordering Information Device Package Shipping MTB025P03KQ8-0-T3-G SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB025P03KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C736Q8 Issued Date : 2017.09.12 Revised Date : 2017.09.29 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=0.1mH, ID=-30A, VDD=-15V Repetitive Avalanche Energy @ L=0.05mH TA=25℃ Total Power Dissipation TA=70℃ Operating Junction and Storage Temperature Range VDS VGS -30 ±20 -7.6 -6.1 -40 *1 -30 45 *2 2.5 3.1 *3 2.0 *3 -55~+150 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 22 40 *3 Unit °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. 100% tested by conditions of VDS=-15V, L=0.1mH, IAS=-7A, VGS=-10V. 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS Dynamic Ciss Coss Crss *1 MTB025P03KQ8 Min. Typ. Max. -30 -1 - 24 44.5 11.2 -2.5 ±25 -1 -10 31.5 62.5 - - 811 162 146 - Unit Test Conditions S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±16V, VDS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V, Tj=125°C VGS=-10V, ID=-6A VGS=-4.5V, ID=-5A VDS=-5V, ID=-5A pF VDS=-15V, VGS=0V, f=1MHz V μA mΩ CYStek Product Specification CYStech Electronics Corp. Spec. No. : C736Q8 Issued Date : 2017.09.12 Revised Date : 2017.09.29 Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Qg *1, 2 Qgs *1, 2 Qgd *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 8 17.2 34.2 9.8 16.3 2.5 3.9 6 Max. - - -0.87 9.5 3.5 -2.6 -10 -1.2 - Unit Test Conditions ns VDD=-15V, ID=-6A, VGS=-10V, RG=1Ω nC VDS=-15V, ID=-6A, VGS=-10V Ω f=1MHz A V ns nC IS=-6A, VGS=0V IF=-6A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB025P03KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C736Q8 Issued Date : 2017.09.12 Revised Date : 2017.09.29 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.2 40 -BVDSS, Normalized Drain-Source Breakdown Voltage -I D, Drain Current (A) 35 -10V,-9V,-8V, -7V, -6V 30 -5V 25 -4V 20 - 3.5V 15 10 -3V 5 1.1 1 0.9 ID=-250μA, VGS=0V VGS=-2.5V 0.8 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 R DS(on) , Static Drain-Source On-State Resistance(mΩ) 1.2 -VSD, Source-Drain Voltage(V) VGS=0V VGS=-4.5V VGS=-10V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 10 0.01 0.1 1 -ID, Drain Current(A) 0 10 R DS(on) , Normalized Static Drain-Source On-State Resistance 150 120 1 2 3 4 5 -IS, Source Drain Current(A) 6 7 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-6A 90 60 30 2 1.8 VGS=-10V, ID=-6A RDSON@Tj=25°C : 24mΩ typ. 1.6 1.4 1.2 1 0.8 0.6 0.4 0 0 MTB025P03KQ8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C736Q8 Issued Date : 2017.09.12 Revised Date : 2017.09.29 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 Crss C oss 1.4 1.2 ID=-1mA 1 0.8 ID=-250μA 0.6 0.4 100 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 10 VDS=-5V 10 1 8 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 Gate Charge Characteristics 100 VDS=-10V 0.1 Pulsed TA=25°C 6 4 VDS=-15V 2 ID=-6A 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 0 4 8 12 16 Qg, Total Gate Charge(nC) 20 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 9 RDS(ON) Limited 10 100μs 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj=150°C, VGS=-10V RθJA=40°C/W, Single Pulse DC -I D, Maximum Drain Current(A) 100 -I D, Drain Current(A) 0 Tj, Junction Temperature(°C) 8 7 6 5 4 3 2 TA=25°C, VGS=-10V, RθJA=40°C/W single pulse 1 0 0.01 0.01 MTB025P03KQ8 0.1 1 10 -ID, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C736Q8 Issued Date : 2017.09.12 Revised Date : 2017.09.29 Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics 350 40 300 VDS=-10V 30 TJ(MAX) =150°C TA=25°C RθJA=40°C/W 250 Power (W) -I D, Drain Current(A) 35 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 25 20 200 150 15 100 10 50 5 0 0.0001 0 0 2 4 6 -VGS, Gate-Source Voltage(V) 8 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTB025P03KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C736Q8 Issued Date : 2017.09.12 Revised Date : 2017.09.29 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB025P03KQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C736Q8 Issued Date : 2017.09.12 Revised Date : 2017.09.29 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB025P03KQ8 CYStek Product Specification Spec. No. : C736Q8 Issued Date : 2017.09.12 Revised Date : 2017.09.29 Page No. : 9/9 CYStech Electronics Corp. Dimension Marking: Device Name Date Code B025 P03K Date Code(counting from left to right) : 1st code: year code, the last digit of Christian year 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M 3rd and 4th codes : prodcution serial number, 01~99 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.200 5.800 6.200 1.270 (BSC) 0.300 1.270 8° 0 Inches Min. Max. 0.150 0.165 0.228 0.244 0.050 (BSC) 0.012 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB025P03KQ8 CYStek Product Specification