AMS AMS73CAG02408RALJH7I High performance 1gbit ddr3 sdram Datasheet

AMS73CAG01808RA
AMS73CAG01808RA
HIGH PERFORMANCE 1Gbit DDR3 SDRAM
8 BANKS X 16Mbit X 8
- H7
- I9
DDR3-1066
DDR3-1333
Clock Cycle Time ( tCK6, CWL=5 )
2.5 ns
2.5 ns
Clock Cycle Time ( tCK7, CWL=6 )
1.875 ns
1.875 ns
Clock Cycle Time ( tCK8, CWL=6 )
1.875 ns
1.875 ns
Clock Cycle Time ( tCK9, CWL=7 )
-
1.5 ns
Clock Cycle Time ( tCK10, CWL=7 )
-
1.5 ns
533 MHz
667 MHz
System Frequency (fCK max)
Specifications
-
-
-
-
-
Features
-
Density : 1G bits
Organization : 16M words x 8 bits x 8 banks
Package :
- 78-ball FBGA
- Lead-free (RoHS compliant) and Halogen-free
Power supply : VDD, VDDQ = 1.5V ± 0.075V
Data rate : 1333Mbps/1066Mbps (max.)
1KB page size
- Row address: A0 to A13
- Column address: A0 to A9
Eight internal banks for concurrent operation
Interface : SSTL_15
Burst lengths (BL) : 8 and 4 with Burst Chop (BC)
Burst type (BT) :
- Sequential (8, 4 with BC)
- Interleave (8, 4 with BC)
CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11
CAS Write Latency (CWL) : 5, 6, 7, 8
Precharge : auto precharge option for each burst access
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Refresh : auto-refresh, self-refresh
Refresh cycles :
- Average refresh period
7.8 μs at 0°C ≤ Tc ≤ +85°C
3.9 μs at +85°C < Tc ≤ +95°C
Operating case temperature range
- Tc = 0°C to +95°C
-
-
-
Double-data-rate architecture; two data transfers per
clock cycle
The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
Bi-directional differential data strobe (DQS and DQS)
is transmitted/received with data for capturing data at
the receiver
DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
Differential clock inputs (CK and CK)
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
Data mask (DM) for write data
Posted CAS by programmable additive latency for better command and data bus efficiency
On-Die Termination (ODT) for better signal quality
- Synchronous ODT
- Dynamic ODT
- Asynchronous ODT
Multi Purpose Register (MPR) for pre-defined pattern
read out
ZQ calibration for DQ drive and ODT
Programmable Partial Array Self-Refresh (PASR)
RESET pin for Power-up sequence and reset function
SRT range : Normal/extended
Programmable Output driver impedance control
Device Usage Chart
Operating
Temperature
Range
Package Outline
78-ball FBGA
- H7
- I9
Std.
L
Temperature
Mark
0°C ≤ Tc ≤ 95°C
•
•
•
•
•
Blank
-40°C ≤ Tc ≤ 95°C
•
•
•
•
•
I
AMS73CAG01808RA Rev.1.0 December 2010
Speed
1
Power
AMS73CAG01808RA
Part Number Information
1
AMS
2
3
4
5
7 3
C
A
6 7
8
9 10
11
12
13
14
G 0 1 8 0
8
R
A
15
J
16 17 18
19
I 9
ORGANIZATION
& REFRESH
256Mx4, 8K : G0140
64Mx16, 8K : G0116
128Mx8, 8K : G0180
512Mx4, 8K : G0240
TEMPERATURE
128Mx16, 8K : G0216
BLANK:
256Mx8, 8K : G0280
I:
TYPE
73 : DDR3
CMOS
0 - 95к
-40 - 95к
H:
-40 - 105к
E:
-40 - 125к
SPEED
VOLTAGE
A:
1.5 V
H7 : 533MHz @CL7-7-7
H8 : 533MHz @CL8-8-8
I8 : 667MHz @CL8-8-8
I9 : 667MHz @CL9-9-9
BANKS
8 : 8 BANKS
I/O
R: SSTL_15
REV CODE
SPECIAL FEATURE
L : LOW POWER GRADE
U : ULTRA LOW POWER GRADE
PACKAGE
Green PACKAGE
DESCRIPTION
J
FBGA
*GREEN: RoHS-compliant and Halogen-Free
1Gb DDR3 SDRAM Addressing
Configuration
128Mb x 8
# of Bank
8
Bank Address
BA0 ~ BA2
Auto precharge
A10/AP
Row Address
A0 ~ A13
Column Address
A0 ~ A9
BC switch on the fly
A12/BC
Page size
AMS73CAG01808RA Rev. 1.0 December 2010
1 KB
2
AMS73CAG01808RA
Pin Configurations
78-ball FBGA (x8 configuration)
1
2
3
A
VSS
VDD
B
VSS
C
VDDQ
D
VSSQ
E
VREFDQ
4
5
6
7
8
9
NC
NU/TDQS
VSS
VDD
A
VSSQ
DQ0
DM/TDQS
VSSQ
VDDQ
B
DQ2
DQS
DQ1
DQ3
VSSQ
C
DQ6
DQS
VDD
VSS
VSSQ
D
VDDQ
DQ4
DQ7
DQ5
VDDQ
E
F
NC
VSS
RAS
CK
VSS
NC
F
G
ODT
VDD
CAS
CK
VDD
CKE
G
H
NC
CS
WE
A10/AP
ZQ
NC
H
J
VSS
BA0
BA2
NC
VREFCA
VSS
J
K
VDD
A3
A0
A12/BC
BA1
VDD
K
L
VSS
A5
A2
A1
A4
VSS
L
M
VDD
A7
A9
A11
A6
VDD
M
N
VSS
RESET
A13
NC
A8
VSS
N
1
Ball Locations (x8)
A
B
C
Populated ball
D
Ball not populated
E
F
G
Top view
H
J
(See the balls through the package)
K
L
M
N
AMS73CAG01808RA Rev. 1.0 December 2010
3
2
3
4
5
6
7
8
9
AMS73CAG01808RA
Signal Pin Description
Pin
Type
Function
CK, CK
Input
Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on
the crossing of the positive edge of CK and negative edge of CK. Output (read) data is referenced to
the crossings of CK and CK
CKE
Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input
buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or Active Power-Down (Row Active in any bank). CKE is asynchronous for self
refresh exit. After VREFCA has become stable during the power on and initialization sequence, it must
be maintained during all operations (including Self-Refresh). CKE must be maintained high throughout
read and write accesses. Input buffers, excluding CK, CK, ODT and CKE are disabled during powerdown. Input buffers, excluding CKE, are disabled during Self -Refresh.
CS
Input
Chip Select: All commands are masked when CS is registered HIGH. CS provides for external Rank
selection on systems with multiple Ranks. CS is considered part of the command code.
ODT
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR3
SDRAM. When enabled, ODT is only applied to each DQ, DQS, DQS and DM/TDQS, NU/TDQS.
The ODT pin will be ignored if the Mode Register (MR1) is pro-grammed to disable ODT.
RAS, CAS, WE
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
DM
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled
HIGH coinci-dent with that input data during a Write access. DM is sampled on both edges of DQS.
BA0 - BA2
Input
Bank Address Inputs: BA0 - BA2 define to which bank an Active, Read, Write or Precharge command
is being applied. Bank address also determines which mode register is to be accessed during a MRS
cycle.
A0 - A13
Input
Address Inputs: Provided the row address for Active commands and the column address for Read/
Write commands to select one location out of the memory array in the respective bank. (A10/AP and
A12/BC have additional functions, see below)The address inputs also provide the op-code during
Mode Register Set commands.
A10 / AP
Input
Autoprecharge: A10 is sampled during Read/Write commands to determine whether Autoprecharge
should be per-formed to the accessed bank after the Read/Write operation. (HIGH:Autoprecharge;
LOW: No Autoprecharge)A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). if only one bank is to be precharged,
the bank is selected by bank addresses.
A12 / BC
Input
Burst Chop: A12 is sampled during Read and Write commands to determine if burst chop(on-the-fly)
will be per-formed. (HIGH : no burst chop, LOW : burst chopped). See command truth table for details.
RESET
Input
Active Low Asynchronous Reset: Reset is active when RESET is LOW, and inactive when RESET
is HIGH. RESET must be HIGH during normal operation. RESET is a CMOS rail to rail signal with DC
high and low at 80% and 20% of VDD, i.e. 1.20V for DC high and 0.30V for DC low.
DQ0 - DQ7
Input/
Output
Data Input/ Output: Bi-directional data bus.
DQS, DQS
Input/
Output
Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in
write data. The data strobe DQS is paired with differential signal DQS to provide differential pair signaling to the system during reads and writes. DDR3 SDRAM supports differential data strobe only and
does not support single-ended.
AMS73CAG01808RA Rev. 1.0 December 2010
4
AMS73CAG01808RA
Pin
Type
Function
TDQS, TDQS
Output
Termination Data Strobe: When enabled via Mode Register A11=1 in MR1, DRAM will enable the
same termination resistance function on TDQS/TDQS that is applied to DQS/DQS. When disabled via
mode register A11=0 in MR1, DM/TDQS will provide the data mask function and TDQS is not used.
NC
No Connect: No internal electrical connection is present.
VDDQ
Supply
DQ power supply: 1.5V +/- 0.075V
VSSQ
Supply
DQ Ground
VDD
Supply
Power Supply: 1.5V +/- 0.075V
VSS
Supply
Ground
VREFDQ
Supply
Reference Voltage for DQ
VREFCA
Supply
Reference Voltage for CA
ZQ
Supply
Reference Pin for ZQ calibration
NOTE : Input only pins ( BA0-BA2, A0-A13, RAS, CAS, WE, CS, CKE, ODT and RESET ) do not supply termination.
AMS73CAG01808RA Rev. 1.0 December 2010
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AMS73CAG01808RA
Simplified State Diagram
CKE L
Power
applied
Power
on
Reset
procedure
MRS, MPR,
write
leveling
Initialization
Self
refresh
SRE
ZQCL
From any
state
RESET
ZQ
calibration
MRS
SRX
REF
ZQCL/ZQCS
Refreshing
Idle
PDE
ACT
PDX
Active
powerdown
Precharge
powerdown
Activating
PDX
CKE L
CKE L
PDE
Bank
active
WRITE
WRITE
READ
WRITE AP
READ AP
READ
Writing
READ
Reading
WRITE
READ AP
WRITE AP
WRITE AP
READ AP
PRE, PREA
Writing
PRE, PREA
PRE, PREA
Precharging
Reading
Automatic
sequence
Command
sequence
ACT = ACTIVATE
MPR = Multipurpose register
MRS = Mode register set
PDE = Power-down entry
PDX = Power-down exit
PRE = PRECHARGE
AMS73CAG01808RA Rev. 1.0 December 2010
PREA = PRECHARGE ALL
READ = RD, RDS4, RDS8
READ AP = RDAP, RDAPS4, RDAPS8
REF = REFRESH
RESET = START RESET PROCEDURE
SRE = Self refresh entry
6
SRX = Self refresh exit
WRITE = WR, WRS4, WRS8
WRITE AP = WRAP, WRAPS4, WRAPS8
ZQCL = ZQ LONG CALIBRATION
ZQCS = ZQ SHORT CALIBRATION
AMS73CAG01808RA
Mode Register MR0
The Mode Register MR0 stores the data for controlling various operating modes of DDR3 SDRAM. It controls burst length, read burst type, CAS latency, test mode, DLL reset, WR and DLL control for precharge
power-down, which include various vendor specific options to make DDR3 SDRAM useful for various applications. The mode register is written by asserting low on CS, RAS, CAS, WE, BA0, BA1 and BA2, while
controlling the states of address pins according to the table below.
BA2
BA1
0*1
0
BA0
0
A 13
A12
0*1
PPD
0
1
A10
A9
WR
A8
A7
DLL
TM
A6
A5
CAS Latency
A2
RBT
CL
A1
A0
Address Field
Mode Register 0
BL
A7
mode
A3
Read Burst Type
A1
A0
BL
0
No
0
Normal
0
Nibble Sequential
0
0
8 (Fixed)
1
Yes
1
Test
1
Interleave
0
1
4 or 8(on the fly)
Write recovery for autoprecharge
1
0
4 (Fixed)
1
1
Reserved
CAS Latency
Slow exit (DLL off)
A11
A10
A9
WR(cycles)
A6
A5
A4
A2
Latency
Fast exit (DLL on)
0
0
0
Reserved
0
0
0
0
Reserved
0
0
1
5*2
0
0
1
0
5
0
1
0
*2
0
1
0
0
6
0
1
1
0
7
1
0
0
0
8
1
0
1
0
9
1
1
0
0
10
1
1
1
0
11(Optional for
DDR3-1600)
6
BA0
MRS mode
0
1
1
7*2
0
0
MR0
1
0
0
8*2
1
A3
DLL Reset
BA1
0
A4
A8
DLL Control for
Precharge PD
A12
A11
MR1
1
0
MR2
1
1
MR3
1
0
1
10*2
1
1
0
12*2
1
1
1
Reserved
*1 : BA2 and A13 are reserved for future use and must be programmed to 0 during MRS.
*2 : WR(write recovery for autoprecharge)min in clock cycles is calculated by dividing tWR(in ns) by tCK(in ns) and rounding up to the
next integer: WRmin[cycles] = Roundup(tWR[ns]/tCK[ns]). The WR value in the mode register must be programmed to be equal or
larger than WRmin. The programmed WR value is used with tRP to determine tDAL.
AMS73CAG01808RA Rev. 1.0 December 2010
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AMS73CAG01808RA
Mode Register MR1
The Mode Register MR1 stores the data for enabling or disabling the DLL, output driver strength, RTT_Nom
impedance, additive latency, write leveling enable, TDQS enable and Qoff.
The Mode Register 1 is written by asserting low on CS, RAS, CAS, WE, high on BA0, low on BA1 and BA2,
while controlling the states of address pins according to the table below.
BA2
BA1
BA0
A13
A12
A11
A10
A9
0*1
0
1
0*1
Qoff
TDQS
0*1
Rtt_Nom
A8
A7
0*1 Level
A6
Rtt_Nom
A5
D.I.C
A9 A6 A2
A4
A3
AL
A2
Rtt_Nom
TDQS enable
0
Disabled
0
0
0
ODT disabled
1
Enabled
0
0
1
RZQ/4
0
1
0
RZQ/2
0
1
1
RZQ/6
1
0
0
RZQ/12*4
Write leveling enable
A0
D.I.C DLL
Rtt_Nom *3
A11
A7
A1
0
Disabled
1
0
1
RZQ/8*4
1
Enabled
1
1
0
Reserved
1
1
1
Reserved
Address Field
Mode Register 1
A0
DLL Enable
0
Enable
1
Disable
Note : RZQ = 240 ohms
Additive Latency
A4
A3
0
0
0 (AL disabled)
0
1
CL-1
1
0
CL-2
1
1
Reserved
Qoff
0
Output buffer enabled
1
*4: If RTT_Nom is used during Writes,
only the values RZQ/2,RZQ/4 and RZQ/6
are allowed.
*2
A12
Output buffer disabled
*3: In Write leveling Mode (MR1[bit7] = 1)
with MR1[bit12] = 1, all RTT_Nom settings
are allowed; in Write Leveling Mode
(MR1[bit7] = 1) with MR1[bit12] = 0, only
RTT_Nom settings of RZQ/2, RZQ/4 and
RZQ/6 are allowed.
A5 A1
*2
*2: Outputs disabled - DQs, DQSs, DQSs.
BA1
BA0
Output Driver Impedance Control
0
0
0
1
RZQ/6
RZQ/7
1
0
RZQ/TBD
1
1
RZQ/TBD
MRS mode
0
0
MR0
0
1
MR1
1
0
MR2
1
1
MR3
Note : RZQ = 240 ohms
* 1 : BA2, A8, A10 and A13 are reserved for future use (RFU) and must be programmed to 0 during MRS.
AMS73CAG01808RA Rev. 1.0 December 2010
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AMS73CAG01808RA
Mode Register MR2
The Mode Register MR2 stores the data for controlling refresh related features, RTT_WR impedance and
CAS write latency (CWL). The Mode Register 2 is written by asserting low on CS, RAS, CAS, WE, high on
BA1, low on BA0 and BA2, while controlling the states of address pins according to the table below.
BA2
BA1
BA 0
0*1
1
0
A 13
A12
A11
0*1
A10
A9
Rtt_WR
A8
A7
A6
A5
A4
0*1 SRT ASR
A3
A2
Self-refresh temperature range (SRT)
0
Normal operating temperature range
1
Extend temperature self-refresh (Optional)
BA1
Address Field
Mode Register 2
Partial Array Self Refresh (Optional)
0
0
0 Full Array
0
0
1 HalfArray (BA[2:0]=000,001,010, &011)
0
1
0 Quarter Array (BA[2:0]=000, & 001)
0
1
1 1/8th Array (BA[2:0] = 000)
A6
Auto Self-refresh (ASR)
1
0
0 3/4 Array (BA[2:0] = 010,011,100,101,110, & 111)
0
Manual SR Reference (SRT)
1
0
1 HalfArray (BA[2:0] = 100, 101, 110, &111)
1
1
0 Quarter Array (BA[2:0]=110, &111)
1
1
1 1/8th Array (BA[2:0]=111)
1
A10 A9
A0
PASR*2
CWL
A2 A1 A0
A7
A1
ASR enable (Optional)
Rtt_WR *2
0
0
Dynamic ODT off
(Write does not affect Rtt value)
0
1
RZQ/4
A5 A4 A3
CAS write Latency (CWL)
1
0
RZQ/2
0
0
0
5 (tCK(avg) ≥2.5ns)
1
1
Reserved
0
0
1
6 (2.5ns >tCK(avg) ≥1.875ns)
0
1
0
7 (1.875ns>tCK(avg) ≥ 1.5ns)
BA0
0
1
1
8 (1.5ns>tCK(avg) ≥1.25ns)
MRS mode
1
0
0
Reserved
0
1
Reserved
0
0
MR0
1
0
1
MR1
1
1
0
Reserved
1
0
MR2
1
1
1
Reserved
1
1
MR3
* 1 : BA2, A8, A11 ~ A13 are RFU and must be programmed to 0 during MRS.
* 2 : The Rtt_WR value can be applied during writes even when Rtt_Nom is disabled.
During write leveling, Dynamic ODT is not available.
AMS73CAG01808RA Rev. 1.0 December 2010
9
AMS73CAG01808RA
Mode Register MR3
The Mode Register MR3 controls Multi Purpose Registers (MPR). The Mode Register 3 is written by asserting low on CS, RAS, CAS, WE, high on BA1 and BA0, and low on BA2 while controlling the states of
address pins according to the table below.
BA 2
BA 1
BA0
0*1
1
1
A13
A12
A11
A10
A9
A8
A7
A6
A3
A2
MPR
MPR Operation
MPR Address
BA0
MRS mode
0
0
MR0
A2
Mode Register 3
A0
MPR location
0
Predefined pattern*2
0
1
RFU
1
0
RFU
1
1
RFU
0
Normal operation*
1
0
MR2
1
Dataflow from MPR
* 1 : BA2, A3 - A13 are reserved for future use (RFU) and must be programmed to 0 during MRS.
* 2 : The predefined pattern will be used for read synchronization.
* 3 : When MPR control is set for normal operation, MR3 A[2] = 0, MR3 A[1:0] will be ignored
10
MPR Loc
Address Field
0
MR1
AMS73CAG01808RA Rev. 1.0 December 2010
A0
A1
1
MR3
A1
3
MPR
0
1
A4
0*1
BA1
1
A5
AMS73CAG01808RA
Command Truth Table
(a) Note 1,2,3,4 apply to the entire Command truth table
(b) Note 5 applies to all Read/Write commands.
[BA=Bank Address, RA=Row Address, CA=Column Address, BC=Burst Chop, X=Don’t care, V=Valid]
CKE
Function
WE
BA0
BA2
A13
A15
A12
/
BC
L
L
BA
L
H
V
V
V
L
L
V
V
H
V
V
V
V
V
H
V
V
V
X
X
X
X
X
L
H
H
H
V
V
V
V
V
Abbreviation
Previous
Cycle
Current
Cycle
CS
Mode Register Set
MRS
H
H
L
L
Refresh
REF
H
H
L
L
Self Refresh Entry
SRE
H
L
L
Self Refresh Exit
Single Bank Precharge
Precharge all Banks
SRX
L
H
RAS CAS
A10
/
AP
A0
A9,A11
OP Code
PRE
H
H
L
L
H
L
BA
V
V
L
V
PREA
H
H
L
L
H
L
V
V
V
H
V
ACT
H
H
L
L
H
H
BA
Bank Activate
Write (Fixed BL8 or BL4)
7,9,12
7,8,9,12
Row Address (RA)
WR
H
H
L
H
L
L
BA
RFU
V
L
CA
Write (BL4, on the Fly)
WRS4
H
H
L
H
L
L
BA
RFU
L
L
CA
Write (BL8, on the Fly)
WRS8
H
H
L
H
L
L
BA
RFU
H
L
CA
Write with Auto Precharge
(Fixed BL8 or BL4)
WRA
H
H
L
H
L
L
BA
RFU
V
H
CA
Write with Auto Precharge
(BL4, on the Fly)
WRAS4
H
H
L
H
L
L
BA
RFU
L
H
CA
Write with Auto Precharge
(BL8, on the Fly)
WRAS8
H
H
L
H
L
L
BA
RFU
H
H
CA
Read (Fixed BL8 or BL4)
Notes
RD
H
H
L
H
L
H
BA
RFU
V
L
CA
Read (BL4, on the Fly)
RDS4
H
H
L
H
L
H
BA
RFU
L
L
CA
Read (BL8, on the Fly)
RDS8
H
H
L
H
L
H
BA
RFU
H
L
CA
Read with Auto Precharge
(Fixed BL8 or BL4)
RDA
H
H
L
H
L
H
BA
RFU
V
H
CA
Read with Auto Precharge
(BL4, on the Fly)
RDAS4
H
H
L
H
L
H
BA
RFU
L
H
CA
Read with Auto Precharge
(BL8, on the Fly)
RDAS8
H
H
L
H
L
H
BA
RFU
H
H
CA
No Operation
NOP
H
H
L
H
H
H
V
V
V
V
V
10
Device Deselected
DES
H
H
H
X
X
X
X
X
X
X
X
11
ZQ calibration Long
ZQCL
H
H
L
H
H
L
X
X
X
H
X
ZQ calibration Short
ZQCS
H
H
Power Down Entry
PDE
H
L
Power Down Exit
PDX
L
H
L
H
H
L
X
X
X
L
X
L
H
H
H
V
V
V
V
V
H
V
X
X
X
X
X
X
X
L
H
H
H
V
V
V
V
V
H
X
X
X
X
X
X
X
X
6,12
6,12
Note :
1. All DDR3 SDRAM commands are defined by states of CS, RAS, CAS, WE and CKE at the rising edge of the clock. The MSB of BA, RA, and CA are
device density and configuration dependant
2. RESET is Low enable command which will be used only for asynchronous reset so must be maintained HIGH during any function.
3. Bank addresses (BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register
4. “V” means “H or L (but a defined logic level)” and “X” means either “defined or undefined (like floating) logic level”
5. Burst reads or writes cannot be terminated or interrupted and Fixed/on the fly BL will be defined by MRS
6. The Power Down Mode does not perform any refresh operations.
7. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
8. Self refresh exit is asynchronous.
9. VREF(Both VREFDQ and VREFCA) must be maintained during Self Refresh operation.
10. The No Operation command should be used in cases when the DDR3 SDRAM is in an idle or a wait state. The purpose of the No Operation
command (NOP) is to prevent the DDR3 SDRAM from registering any unwanted commands between operations. A No Operation command will not
terminate a previous operation that is still executing, such as a burst read or write cycle.
11. The Deselect command performs the same function as a No Operation command.
12. Refer to the CKE Truth Table for more detail with CKE transition
AMS73CAG01808RA Rev. 1.0 December 2010
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AMS73CAG01808RA
CKE Truth Table
(a) Note 1~7 apply to the entire Command truth table
(b) CKE low is allowed only if tMRD and tMOD are satisfied
CKE
Current State
2
Previous Cycle
(N-1)
1
Command (N)
Current Cycle
(N)
3
1
Action (N) 3
Notes
14, 15
RAS, CAS, WE, CS
L
L
X
Maintain Power-Down
L
H
DESELECT or NOP
Power Down Exit
11, 14
L
L
X
Maintain Self Refresh
15, 16
L
H
DESELECT or NOP
Self Refresh Exit
8, 12, 16
Bank(s) Active
H
L
DESELECT or NOP
Active Power Down Entry
11, 13, 14
Reading
H
L
DESELECT or NOP
Power Down Entry
11, 13, 14, 17
Power Down
Self Refresh
Writing
H
L
DESELECT or NOP
Power Down Entry
11, 13, 14, 17
Precharging
H
L
DESELECT or NOP
Power Down Entry
11, 13, 14, 17
Refreshing
All Banks Idle
H
L
DESELECT or NOP
Precharge Power Down Entry
11
H
L
DESELECT or NOP
Precharge Power Down Entry
11,13, 14, 18
H
L
REFRESH
Self Refresh Entry
9, 13, 18
For more details with all signals See “Command Truth Table,” on previous page
10
Notes:
1. CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge.
2. Current state is defined as the state of the DDR3 SDRAM immediately prior to clock edge N
3. COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N), ODT is not included here
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document
5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh
6. CKE must be registered with the same value on tCKEmin consecutive positive clock edges. CKE must remain at the valid input level the entire time it
takes to achieve the tCKEmin clocks of registeration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period
of tIS + tCKEmin + tIH.
7. DESELECT and NOP are defined in the Command truth table
8. On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXS period. Read or ODT commands
may be issued only after tXSDLL is satisfied.
9. Self Refresh mode can only be entered from the All Banks Idle state.
10. Must be a legal command as defined in the Command Truth Table.
11. Valid commands for Power Down Entry and Exit are NOP and DESELECT only.
12. Valid commands for Self Refresh Exit are NOP and DESELECT only.
13. Self Refresh can not be entered while Read or Write operations. See ‘Self-Refresh Operation” and ‘Power-Down Modes” on later section for a
detailed list of restrictions.
14. The Power Down does not perform any refresh operations.
15. “X” means “don’t care (including floating around VREF)” in Self Refresh and Power Down. It also applies to Address pins
16. VREF (Both VREFDQ and VREFCA) must be maintained during Self Refresh operation.
17. If all banks are closed at the conclusion of the read, write or precharge command, then Precharge Power Down is entered, otherwise Active Power
Down is entered
18. ‘Idle state’ means that all banks are closed(tRP,tDAL,etc. satisfied) and CKE is high and all timings from previous operations are satisfied
(tMRD,tMOD,tRFC,tZQinit,tZQoper,tZQCS,etc)as well as all SRF exit and Power Down exit parameters are satisfied (tXS,tXP,tXPDLL,etc)
AMS73CAG01808RA Rev. 1.0 December 2010
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AMS73CAG01808RA
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
-0.4 V ~ 1.975 V
V
1,3
VDDQ
Voltage on VDDQ pin relative to Vss
-0.4 V ~ 1.975 V
V
1,3
VIN, VOUT
Voltage on any pin relative to Vss
-0.4 V ~ 1.975 V
V
1
TSTG
Storage Temperature
-55 to +100
°C
1,2
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times;and VREF must be not greater than 0.6 x VDDQ,
When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
Operating Temperature Condition
Symbol
Parameter
Rating
Units
Notes
TC
Operating case temperature
0 to +95
°C
1,2,3
NOTE :
1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During
operation, the DRAM case temperature must be maintained between 0°C to +85°C under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between +85°C and +95°C
case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9μs.
(This double refresh requirement may not apply for some devices.)
b) If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the
Manual Self-Refresh mode with Extended Temperature Range capability (MR2 bit [A6, A7] = [0, 1]) or enable the
optional Auto Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]).
Recommended DC Operating Conditions
Rating
Symbol
Parameter
Min.
Typ.
Max.
Units
Notes
VDD
Supply voltage
1.425
1.5
1.575
V
1,2
VDDQ
Supply voltage for Output
1.425
1.5
1.575
V
1,2
NOTE :
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
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AMS73CAG01808RA
AC and DC Input Measurement Levels
Single-Ended AC and DC Input Levels for Command and Address
Symbol
Parameter
Min.
Max.
Units
Notes
VIHCA (DC100)
DC input logic high
VREF + 0.100
VDD
V
1
VILCA (DC100)
DC input logic low
VSS
VREF - 0.100
V
1
VIHCA (AC175)
AC input logic high
VREF + 0.175
-
V
1,2
VILCA (AC175)
AC input logic low
-
VREF - 0.175
V
1,2
VIHCA (AC150)
AC input logic high
VREF + 0.150
-
V
1,2
VILCA (AC150)
AC input logic low
-
VREF - 0.150
V
1,2
VREFCA (DC)
Reference voltage for
ADD, CMD inputs
0.49 * VDD
0.51 * VDD
V
3,4
NOTE :
1. For input only pins except /RESET : VREF = VREFCA (DC).
2. See Overshoot and Undershoot Specifications section.
3. The AC peak noise on VREF may not allow VREF to deviate from VREFCA (DC) by more than ±1% VDD
(for reference : approx. ±15 mV).
4. For reference : approx. VDD/2 ±15 mV.
Single-Ended AC and DC Input Levels for DQ and DM
Symbol
Parameter
Min.
Max.
Units
Notes
VIHDQ (DC100)
DC input logic high
VREF + 0.100
VDD
V
1
VILDQ (DC100)
DC input logic low
VSS
VREF - 0.100
V
1
VIHDQ (AC175)
AC input logic high
VREF + 0.175
-
V
1,2
VILDQ (AC175)
AC input logic low
-
VREF - 0.175
V
1,2
VIHDQ (AC150)
AC input logic high
VREF + 0.150
-
V
1,2
VILDQ (AC150)
AC input logic low
-
VREF - 0.150
V
1,2
VREFDQ (DC)
Reference voltage for
DQ, DM inputs
0.49 * VDD
0.51 * VDD
V
3,4
NOTE :
1. For DQ and DM : VREF = VREFDQ (DC).
2. See Overshoot and Undershoot Specifications section.
3. The AC peak noise on VREF may not allow VREF to deviate from VREFDQ (DC) by more than ±1% VDD
(for reference: approx. ±15 mV).
4. For reference: approx. VDD/2 ±15 mV.
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AMS73CAG01808RA
VREF Tolerances
The dc-tolerance limits and ac-noise limits for the reference voltages VREFCA and VREFDQ are illustrate in
figure VREF(DC) tolerance and VREF AC-Noise limits. It shows a valid reference voltage VREF(t) as a
function of time. (VREF stands for VREFCA and VREFDQ likewise).
VREF(DC) is the linear average of VREF(t) over a very long period of time (e.g. 1 sec). This average has to
meet the min/max requirement in Table of “Single-Ended AC and DC Input Levels for Command and
Address”. Furthermore VREF(t) may temporarily deviate from VREF(DC) by no more than +/- 1% VDD.
voltage
VDD
VSS
time
VREF(DC) tolerance and VREF AC-Noise limits
The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC) and VIL(DC) are
dependent on VREF.
"VREF" shall be understood as VREF(DC), as defined in figure above, VREF(DC) tolerance and VREF ACNoise limits.
This clarifies, that DC-variations of VREF affect the absolute voltage a signal has to reach to achieve a valid
high or low level and therefore the time to which setup and hold is measured. System timing and voltage
budgets need to account for VREF(DC) deviations from the optimum position within the data-eye of the
input signals.
This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage associated with VREF AC-noise. Timing and voltage effects due to AC-noise on VREF up to the specified limit (+/- 1% of VDD) are included in DRAM timings and their associated deratings.
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AMS73CAG01808RA
AC and DC Logic Input Levels for Differential Signals
Differential signals definition
tDVAC
Differential Input Voltage (i.e. DQS-DQS, CK-CK)
VIH.DIFF.AC.MIN
VIH.DIFF.MIN
0.0
half cycle
VIL.DIFF.MAX
VIL.DIFF.AC.MAX
tDVAC
time
Definition of differential ac-swing and "time above ac level" tDVAC
Differential swing requirement for clock (CK - CK) and strobe (DQS - DQS)
Differential AC and DC Input Levels
Symbol
Parameter
Min.
Max.
Units
Notes
VIHdiff
Differential input high
+0.2
NOTE 3
V
1
VILdiff
Differential input low
NOTE 3
-0.2
V
1
VIHdiff(AC)
Differential input high AC
2 x (VIH(AC) - VREF)
NOTE 3
V
2
VILdiff(AC)
Differential input low AC
NOTE 3
2 x (VREF - VIL(AC))
V
2
NOTE :
1. Used to define a differential signal slew-rate.
2. for CK - CK use VIH/VIL(AC) of address/command and VREFCA; for strobes (DQS, DQS) use VIH/VIL(AC) of DQs
and VREFDQ; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also here.
3. These values are not defined, however they single-ended signals CK, CK, DQS, DQS need to be within the respective limits (VIH(DC) max, VIL(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot. Refer to "Overshoot and Undershoot specification".
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AMS73CAG01808RA
Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS
Slew Rate [V/ns]
tDVAC [ps] @ |VIH/Ldiff(AC)| = 350mV
tDVAC [ps] @ |VIH/Ldiff(AC)| = 300mV
Min.
Max.
Min.
Max.
> 4.0
75
-
175
-
4.0
57
-
170
-
3.0
50
-
167
-
2.0
38
-
163
-
1.8
34
-
162
-
1.6
29
-
161
-
1.4
22
-
159
-
1.2
13
-
155
-
1.0
0
-
150
-
< 1.0
0
-
150
-
Single-ended requirements for differential signals
Each individual component of a differential signal (CK, DQS, CK, DQS) has also to comply with certain
requirements for single-ended signals.
CK and CK have to approximately reach VSEH min / VSEL max [ approximately equal to the AC-levels
( VIH(AC) / VIL(AC) ) for Address/command signals ] in every half-cycle.
DQS, DQS have to reach VSEH min / VSEL max [ approximately the ac-levels ( VIH(AC) / VIL(AC) ) for DQ
signals ] in every half-cycle proceeding and following a valid transition.
Note that the applicable AC-levels for Address/command and DQ’s might be different per speed-bin etc.
E.g. if VIH150(AC) / VIL150(AC) is used for Address/command signals, then these AC-levels apply also for
the single-ended components of differential CK and CK.
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AMS73CAG01808RA
VDD or VDDQ
VSEH min
VSEH
VDD/2 or VDDQ/2
CK or DQS
VSEL max
VSEL
VSS or VSSQ
time
Single-ended requirement for differential signals
Note that while Address/command and DQ signal requirements are with respect to VREF, the single-ended
components of differential signals have a requirement with respect to VDD/2; this is nominally the same.
The transition of single-ended signals through the AC-levels is used to measure setup time. For singleended components of differential signals the requirement to reach VSEL max, VSEH min has no bearing on
timing, but adds a restriction on the common mode characteristics of these signals.
Single-ended levels for CK, DQS, CK, DQS
Symbol
VSEH
VSEL
Parameter
Min.
Max.
Units
Notes
Single-ended high-level for strobes
(VDD/2) + 0.175
NOTE 3
V
1,2
Single-ended high-level for CK, CK
(VDD/2) + 0.175
NOTE 3
V
1,2
Single-ended low-level for strobes
NOTE 3
(VDD/2) - 0.175
V
1,2
Single-ended low-level for CK, CK
NOTE 3
(VDD/2) - 0.175
V
1,2
NOTE :
1. For CK, CK use VIH/VIL(AC) of address/command; for strobes (DQS, DQS) use VIH/VIL(AC) of DQs.
2. VIH(AC)/VIL(AC) for DQs is based on VREFDQ; VIH(AC)/VIL(AC) for address/command is based on VREFCA; if a
reduced AC-high or AC-low level is used for a signal group, then the reduced level applies also here.
3. These values are not defined, however the single-ended components of differential signals CK, CK, DQS, DQS need
to be within the respective limits (VIH(DC) max, VIL(DC) min) for single-ended signals as well as the limitations for
overshoot and undershoot. Refer to "Overshoot and Undershoot specifications”.
AMS73CAG01808RA Rev. 1.0 December 2010
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AMS73CAG01808RA
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe,
each cross point voltage of differential input signals (CK, CK and DQS, DQS) must meet the requirements in
below table. The differential input cross point voltage VIX is measured from the actual cross point of true and
complement signal to the mid level between of VDD and VSS.
VDD
CK, DQS
VIX
VDD/2
VIX
VIX
CK, DQS
VSS
VIX Definition
Cross point voltage for differential input signals ( CK, DQS )
Symbol
Parameter
VIX
Differential Input Cross Point Voltage relative to VDD/2 for CK, CK
VIX
Differential Input Cross Point Voltage relative to VDD/2 for DQS, DQS
Min.
Max.
Units
-150
150
mV
-175
175
mV
-150
150
mV
Notes
1
NOTE :1. Extended range for VIX is only allowed for clock and if single-ended clock input signals CKand CK are monotonic, have a single-ended swing VSEL / VSEH of at least VDD/2 +/- 250 mV, and the differential slew rate of
CK-CK is larger than 3 V/ ns. Refer to the table of Cross point voltage for differential input signals (CK, DQS)
for VSEL and VSEH standard values.
Differential input slew rate definition
Measured
Description
Defined by
From
To
Differential input slew rate for rising edge ( CK-CK and DQS-DQS )
VILdiff (max)
VIHdiff (min)
VIHdiff (min) - VILdiff (max)
Delta TRdiff
Differential input slew rate for falling edge ( CK-CK and DQS-DQS )
VIHdiff (min)
VILdiff (max)
VIHdiff (min) - VILdiff (max)
Delta TFdiff
NOTE : The differential signal (i.e. CK - CK and DQS - DQS) must be linear between these thresholds.
VIHdiffmin
0
VILdiffmax
delta TRdiff
delta TFdiff
Differential Input Slew Rate definition for DQS, DQS, and CK, CK
AMS73CAG01808RA Rev. 1.0 December 2010
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AMS73CAG01808RA
IDD Specification
( VDD = 1.5V±0.075V; VDDQ =1.5V±0.075V )
Conditions
Symbol - H7
- I9
Unit
Operating One Bank Active-Precharge Current; CKE: High; External clock: On; tCK, nRC, nRAS,
CL: see timing used table; BL: 8; AL: 0; CS: High between ACT and PRE; Command, Address: partially
toggling; Data IO: FLOATING; DM:stable at 0; Bank Activity: Cycling with one bank active at a time;
Output Buffer and RTT: Enabled in Mode Registers; ODT Signal: stable at 0
IDD0
85
95
mA
Operating One Bank Active-Read-Precharge Current; CKE: High; External clock: On; tCK, nRC,
nRAS, nRCD, CL: see timing used table; BL: 81; AL: 0; CS: High between ACT, RD and PRE; Command, Address, Data IO: partially toggling; DM:stable at 0; Bank Activity: Cycling with one bank active
at a time; Output Buffer and RTT: Enabled in Mode Registers; ODT Signal: stable at 0
IDD1
100
110
mA
Precharge Power-Down Current Slow Exit; CKE: Low; External clock: On; tCK, CL: see timing used
table; BL: 8; AL: 0; CS: stable at 1; Command, Address: stable at 0; Data IO: FLOATING; DM: stable
IDD2P0
at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers; ODT Signal:
stable at 0; Pre-charge Power Down Mode: Slow Exit
13
14
mA
Precharge Power-Down Current Fast Exit; CKE: Low; External clock: On; tCK, CL: see timing used
table; BL: 8; AL: 0; CS: stable at 1; Command, Address: stable at 0; Data IO: FLOATING; DM:stable
IDD2P1
at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers; ODT Signal:
stable at 0; Pre-charge Power Down Mode: Fast Exit
35
40
mA
Precharge Standby Current; CKE: High; External clock: On; tCK, CL: see timing used table; BL: 8;
AL: 0; CS: stable at 1; Command, Address: partially toggling; Data IO: FLOATING; DM:stable at 0;
Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers; ODT Signal: stable
at 0
55
60
mA
Precharge Standby ODT Current; CKE: High; External clock: On; tCK, CL: see timing used table; BL:
8; AL: 0; CS: stable at 1; Command, Address: partially toggling; Data IO: FLOATING; DM:stable at 0;
IDD2NT
Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers; ODT Signal: toggling
55
60
mA
Precharge Quiet Standby Current; CKE: High; External clock: On; tCK, CL: see timing used table;
BL: 8; AL: 0; CS: stable at 1; Command, Address: stable at 0; Data IO: FLOATING; DM: stable at 0;
Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers; ODT Signal: stable
at 0
IDD2Q
50
55
mA
Active Power-Down Current; CKE: Low; External clock: On; tCK, CL: see timing used table; BL: 8;
AL: 0; CS: stable at 1; Command, Address: stable at 0; Data IO: FLOATING; DM: stable at 0; Bank
Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers; ODT Signal: stable at 0
IDD3P
35
40
mA
Active Standby Current; CKE: High; External clock: On; tCK, CL: see timing used table; BL: 8; AL:
0; CS: stable at 1; Command, Address: partially toggling; Data IO: FLOATING; DM: stable at 0; Bank
Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers; ODT Signal: stable at 0
IDD3N
60
65
mA
Operating Burst Read Current; CKE: High; External clock: On; tCK, CL: see timing used table; BL:
8; AL: 0; CS: High between RD; Command, Address: par-tially toggling; Data IO: seamless read data
burst with different data between one burst and the next one; DM: stable at 0; Bank Activity: all banks
open, RD commands cycling through banks: 0,0,1,1,2,2,...; Output Buffer and RTT: Enabled in Mode
Registers; ODT Signal: stable at 0
IDD4R
160
200
mA
Operating Burst Write Current; CKE: High; External clock: On; tCK, CL: see timing used table; BL:
8; AL: 0; CS: High between WR; Command, Address: par-tially toggling; Data IO: seamless write data
burst with different data between one burst and the next one; DM: stable at 0; Bank Activity: all banks IDD4W
open, WR commands cycling through banks: 0,0,1,1,2,2,...; Output Buffer and RTT: Enabled in Mode
Registers; ODT Signal: stable at HIGH
170
210
mA
AMS73CAG01808RA Rev. 1.0 December 2010
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IDD2N
AMS73CAG01808RA
Conditions
Symbol - H7
- I9
Unit
Burst Refresh Current; CKE: High; External clock: On; tCK, CL, nRFC: see timing used table; BL: 8;
AL: 0; CS: High between REF; Command, Address: partially toggling; Data IO: FLOATING; DM:stable
at 0; Bank Activity: REF command every nRFC; Output Buffer and RTT: Enabled in Mode Registers;
ODT Signal: stable at 0
IDD5B
260
270
mA
Self Refresh Current: Normal Temperature Range; TCASE: 0- 85°C; Auto Self-Refresh (ASR): Disabled; Self-Refresh Temperature Range (SRT): Normal; CKE: Low; External clock: Off; CK and CK:
LOW; CL: see timing used table; BL: 8; AL: 0; CS, Command, Address, Data IO: FLOATING; DM: stable at 0; Bank Activity: Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers;
ODT Signal: FLOATING
IDD6
10
10
mA
18
18
mA
Self Refresh Current: Extended Temperature Range; TCASE: 0- 95°C; Auto Self-Refresh (ASR):
Disabled; Self-Refresh Temperature Range (SRT): Extended; CKE: Low; External clock: Off; CK and
CK: LOW; CL: see timing used table; BL: 8; AL: 0; CS, Command, Address, Data IO: FLOATING; DM: IDD6ET
stable at 0; Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers; ODT Signal: FLOATING
Operating Bank Interleave Read Current; CKE: High; External clock: On; tCK, nRC, nRAS, nRCD,
nRRD, nFAW, CL: see timing used table; BL: 8; AL: CL-1; CS: High between ACT and RDA; Command, Address: partially toggling; Data IO: read data bursts with different data between one burst and
the next one; DM: stable at 0; Bank Activity: two times interleaved cycling through banks (0, 1, ...7) with
different addressing; Output Buffer and RTT: Enabled in Mode Registers; ODT Signal: stable at 0
IDD7
270
310
mA
RESET Low Current; RESET: Low; External clock: off; CK and CK: LOW; CKE: FLOATING; CS,
Command, Address, Data IO: FLOATING; ODT Signal : FLOATING
IDD8
8
8
mA
NOTE :
1) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B
2) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B;
RTT_Wr enable: set MR2 A[10,9] = 10B
3) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12=1B for Fast Exit
4) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature
5) Self-Refresh Temperature Range (SRT): set MR2 A7=0B for normal or 1B for extended temperature range
6) Refer to DRAM supplier data sheet and/or DIMM SPD to determine if optional features or requirements are supported by DDR3 SDRAM
7) Read Burst type : Nibble Sequential, set MR0 A[3]=0B
Timing used for IDD and IDDQ Measured - Loop Patterns
Speed
CL-nRCD-nRP
DDR3-1066
7-7-7
tCKmin
DDR3-1333
8-8-8
8-8-8
1.875
9-9-9
1.5
Unit
ns
CL
7
8
8
9
nCK
tRCDmin
7
8
8
9
nCK
tRCmin
27
28
33
34
nCK
tRASmin
tRPmin
20
7
20
8
8
nCK
9
nCK
tFAW
20
20
nCK
tRRD
4
4
nCK
tRFC - 1Gb
59
74
nCK
AMS73CAG01808RA Rev. 1.0 December 2010
21
AMS73CAG01808RA
DDR3-1066 Speed Bins
Speed Bin
-H7 (DDR3-1066)
CL-nRCD-nRP
7-7-7
Parameter
Symbol
Internal read command to first data
Min
Max
Unit
Notes
tAA
13.125
20
ns
9
tRCD
13.125
-
ns
9
Precharge command period
tRP
13.125
-
ns
9
Active to active/auto-refresh command time
tRC
50.625
-
ns
9
Active to read or write delay time
Active to precharge command period
Average Clock
Cycle Time
tRAS
37.5
9 * tREFI
ns
8
CWL = 5
tCK(avg)
2.5
3.3
ns
1,2,3,6
CWL = 6
tCK(avg)
Reserved
Reserved
ns
1,2,3,4
CL = 7
CWL = 5
tCK(avg)
Reserved
Reserved
ns
4
CWL = 6
tCK(avg)
1.875
< 2.5
ns
1,2,3,4
CL = 8
CWL = 5
tCK(avg)
Reserved
Reserved
ns
4
CWL = 6
tCK(avg)
1.875
< 2.5
ns
1,2,3
CL = 6
Supported CL setting
Supported CWL setting
6, 7, 8
nCK
5, 6
nCK
DDR3-1333 Speed Bins
Speed Bin
-I9 (DDR3-1333)
CL-nRCD-nRP
9-9-9
Unit
Notes
20
ns
9
13.125
-
ns
9
tRP
13.125
-
ns
9
Active to active/auto-refresh command time
tRC
49.125
-
ns
9
Active to precharge command period
tRAS
36
9 * tREFI
ns
8
CWL = 5
tCK(avg)
2.5
3.3
ns
1,2,3,7
CWL = 6
tCK(avg)
Reserved
Reserved
ns
1,2,3,4,7
Parameter
Internal read command to first data
Active to read or write delay time
Precharge command period
Average Clock
Cycle Time
CL = 6
Symbol
Min
Max
tAA
13.125
tRCD
CWL = 7
tCK(avg)
Reserved
Reserved
ns
4
CWL = 5
tCK(avg)
Reserved
Reserved
ns
4
CWL = 6
tCK(avg)
1.875
< 2.5
ns
1,2,3,4,7
CWL = 7
tCK(avg)
Reserved
Reserved
ns
1,2,3,4
CWL = 5
tCK(avg)
Reserved
Reserved
ns
4
CWL = 6
tCK(avg)
1.875
< 2.5
ns
1,2,3,7
CWL = 7
tCK(avg)
Reserved
Reserved
ns
1,2,3,4
CL = 9
CWL = 5, 6
tCK(avg)
Reserved
Reserved
ns
4
CWL = 7
tCK(avg)
1.5
< 1.875
ns
1,2,3,4
CL = 10
CWL = 5, 6
tCK(avg)
Reserved
Reserved
ns
4
CWL = 7
tCK(avg)
1.5
< 1.875
ns
1,2,3
CL = 7
CL = 8
Supported CL setting
Supported CWL setting
AMS73CAG01808RA Rev. 1.0 December 2010
22
6, 7, 8, 9, 10
nCK
5, 6, 7
nCK
AMS73CAG01808RA
Speed Bin Table Notes
NOTE :
1. The CL setting and CWL setting result in tCK(avg) Min and tCK(avg) Max requirements. When making a selection
of tCK(avg), both need to be fulfilled: Requirements from CL setting as well as requirements from CWL setting.
2. tCK(avg) Min limits: Since CAS Latency is not purely analog - data and strobe output are synchronized by the DLL all possible intermediate frequencies may not be guaranteed. An application should use the next smaller JEDEC
standard tCK(avg) value (2.5, 1.875, 1.5, or 1.25 ns) when calculating CL [nCK] = tAA [ns] / tCK(avg) [ns], rounding
up to the next "Supported CL".
3. tCK(avg) Max limits: Calculate tCK(avg) = tAA Max / CL Selected and round the resulting tCK(avg) down to the
next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875 ns or 1.25 ns). This result is tCK(avg) Max corresponding to CL
selected.
4. "Reserved" settings are not allowed. User must program a different value.
5. "Optional" settings allow certain devices in the industry to support this setting, however, it is not a mandatory feature.
6. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the table which are
not subject to production tests but verified by design/characterization.
7. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table which are
not subject to production tests but verified by design/characterization.
8. tREFI depends on operating case temperature (Tc).
9. For devices supporting optional down binning to CL=7 and CL=9, tAA/tRCD/tRP min must be 13.125 ns or lower.
SPD settings must be programmed to match. For example, DDR3-1333(CL9) devices supporting down binning to
DDR3-1066(CL7) should program 13.125 ns in SPD bytes for tAAmin (Byte 16), tRCDmin (Byte 18), and tRPmin
(Byte 20). Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23) also should be programmed accordingly. For example, 49.125ns (tRASmin + tRPmin=36ns+13.125ns) for DDR3-1333(CL9).
AMS73CAG01808RA Rev. 1.0 December 2010
23
AMS73CAG01808RA
AC Characteristics
( VDD = 1.5V±0.075V; VDDQ =1.5V±0.075V )
Parameter
Symbol
-H7 (DDR3-1066)
-I9 (DDR3-1333)
Min
Min
Max
Max
See Speed Bins Table
Unit
Average clock cycle time
tCK(avg)
Minimum clock cycle time
(DLL-off mode)
tCK
(DLL-off)
8
-
8
-
ns
Average CK high level width
tCH(avg)
0.47
0.53
0.47
0.53
tCK(avg)
Average CK low level width
tCL(avg)
0.47
0.53
0.47
0.53
tCK(avg)
7.5
-
6
-
ns
4
-
4
-
nCK
Note
ns
6
Active Bank A to Active Bank B
command period
tRRD
Four activate window
tFAW
37.5
-
30
-
ns
Address and Control input hold time
(VIH/VIL (DC100) levels)
tIH(base)
DC100
200
-
140
-
ps
16
Address and Control input setup time
(VIH/VIL (AC175) levels)
tIS(base)
AC175
125
-
65
-
ps
16
Address and Control input setup time
(VIH/VIL (AC150) levels)
tIS(base)
AC150
125+150
-
65+125
-
ps
16,24
DQ and DM input hold time
(VIH/VIL (DC) levels)
tDH(base)
100
-
65
-
ps
17
DQ and DM input setup time
(VIH/VIL (AC) levels)
tDS(base)
25
-
30
-
ps
17
Control and Address Input pulse width
for each input
tIPW
780
-
620
-
ps
25
DQ and DM Input pulse width
for each input
tDIPW
490
-
400
-
ps
25
DQ high impedance time
tHZ(DQ)
-
300
-
250
ps
13,14
DQ low impedance time
tLZ(DQ)
-600
300
-500
250
ps
13,14
DQS, DQS high impedance time
(RL + BL/2 reference)
tHZ(DQS)
-
300
-
250
ps
13,14
DQS, DQS low impedance time
(RL - 1 reference)
tLZ(DQS)
-600
300
-500
250
ps
13,14
tDQSQ
-
150
-
125
ps
12,13
DQS, DQS to DQ Skew,
per group, per access
CAS to CAS command delay
tCCD
4
-
4
-
nCK
DQ output hold time from DQS, DQS
tQH
0.38
-
0.38
-
tCK(avg)
12,13
DQS, DQS rising edge output
access time from rising CK, CK
tDQSCK
-300
300
-255
255
ps
12,13
DQS latching rising transitions
to associated clock edges
tDQSS
-0.25
0.25
-0.25
0.25
tCK(avg)
DQS falling edge hold time
from rising CK
tDSH
0.2
-
0.2
-
tCK(avg)
29
DQS falling edge setup time
to rising CK
tDSS
0.2
-
0.2
-
tCK(avg)
29
DQS input high pulse width
tDQSH
0.45
0.55
0.45
0.55
tCK(avg)
27,28
AMS73CAG01808RA Rev. 1.0 December 2010
24
AMS73CAG01808RA
-H7 (DDR3-1066)
-I9 (DDR3-1333)
Symbol
Min
Max
Min
Max
Unit
Note
DQS input low pulse width
tDQSL
0.45
0.55
0.45
0.55
tCK(avg)
26,28
DQS output high time
tQSH
0.38
-
0.40
-
tCK(avg)
12,13
DQS output low time
tQSL
0.38
-
0.40
-
tCK(avg)
12,13
Mode register set command cycle time
tMRD
4
-
4
-
nCK
Mode register set command update
delay
tMOD
15
-
15
-
ns
12
-
12
-
nCK
Read preamble time
tRPRE
0.9
-
0.9
-
tCK(avg)
13,19
Read postamble time
tRPST
0.3
-
0.3
-
tCK(avg)
11,13
Write preamble time
tWPRE
0.9
-
0.9
-
tCK(avg)
1
Write postamble time
tWPST
0.3
-
0.3
-
tCK(avg)
1
tWR
15
-
15
-
ns
Parameter
Write recovery time
Auto precharge write recovery
+ Precharge time
Multi-purpose register recovery time
tDAL(min)
tMPRR
WR + roundup [tRP / tCK(avg)]
nCK
1
-
1
-
nCK
22
7.5
-
7.5
-
ns
18
4
-
4
-
nCK
18
7.5
-
7.5
-
ns
4
-
4
-
nCK
tCKE(min)
+1nCK
-
tCKE(min)
+1nCK
-
10
-
10
-
ns
5
-
5
-
nCK
10
-
10
-
ns
5
-
5
-
nCK
tRFC(min)
+10
-
tRFC(min)
+10
-
5
-
5
-
tXSDLL
tDLLK
(min)
-
tDLLK
(min)
-
Auto-refresh to Active/Auto-refresh
command time
tRFC
110
-
110
-
Average Periodic Refresh Interval
0°C < Tc < +85°C
tREFI
-
7.8
-
7.8
Average Periodic Refresh Interval
+85°C < Tc < +95°C
tREFI
-
3.9
-
3.9
CKE minimum high and low pulse width
tCKE
5.625
-
5.625
-
ns
3
-
3
-
nCK
Exit reset from CKE high to a valid
command
tRFC(min)
+10
-
tRFC(min)
+10
-
tXPR
5
-
5
-
nCK
DLL locking time
tDLLK
512
-
512
-
nCK
Internal write to read command delay
Internal read to precharge command
delay
tWTR
tRTP
Minimum CKE low width for Self-refresh
entry to exit timing
tCKESR
Valid clock requirement after Selfrefresh entry or Power-down entry
tCKSRE
Valid clock requirement before Selfrefresh exit or Power-down exit
tCKSRX
Exit Self-refresh to commands
not requiring a locked DLL
Exit Self-refresh to commands
requiring a locked DLL
AMS73CAG01808RA Rev. 1.0 December 2010
tXS
25
ns
nCK
nCK
ns
μs
μs
ns
AMS73CAG01808RA
-H7 (DDR3-1066)
-I9 (DDR3-1333)
Symbol
Min
Max
Min
Max
tPD
tCKE(min)
9*tREFI
tCKE(min)
9*tREFI
24
-
24
-
ns
2
10
-
10
-
nCK
2
7.5
-
6
-
ns
3
-
3
-
nCK
tCPDED
1
-
1
-
nCK
Timing of ACT command to
Power-down entry
tACTPDEN
1
-
1
Timing of PRE command to
Power-down entry
tPRPDEN
1
-
1
Timing of RD/RDA command to
Power-down entry
tRDPDEN
RL+4+1
-
RL+4+1
Timing of WR command to Power-down
entry (BL8OTF, BL8MRS, BL4OTF)
tWRPDEN
(min)
WL + 4 + [tWR/tCK(avg)]
nCK
9
Timing of WR command to Power-down
entry (BC4MRS)
tWRPDEN
(min)
WL + 2 + [tWR/tCK(avg)]
nCK
9
nCK
10
nCK
10
nCK
20,21
7
Parameter
Power-down entry to exit time
Exit precharge power-down with
DLL frozen to commands requiring
a locked DLL
Exit power-down with DLL on to any
valid command; Exit precharge
power-down with DLL frozen to
commands not requiring a locked DLL
Command pass disable delay
tXPDLL
Unit
15
tXP
-
nCK
20
nCK
20
nCK
Timing of WRA command to Power-down
tWRAPDEN
entry (BL8OTF, BL8MRS, BL4OTF)
WL+4
+WR+1
-
WL+4
+WR+1
-
Timing of WRA command to Power-down
tWRAPDEN
entry (BC4MRS)
WL+2
+WR+1
-
WL+2
+WR+1
-
1
-
1
Timing of MRS command to Power-down
tMRSPDEN
entry
tMOD
(min)
-
tMOD
(min)
-
RTT turn-on
tAON
-300
300
-250
250
ps
tAONPD
2
8.5
2
8.5
ns
tAOF
0.3
0.7
0.3
0.7
tCK(avg)
tAOFPD
2
8.5
2
8.5
ns
4
-
4
6
-
6
Timing of REF command to Power-down
entry
Asynchronous RTT turn-on delay
(Power-down with DLL frozen)
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
Asynchronous RTT turn-off delay
(Power-down with DLL frozen)
Note
tREFPDEN
ODT high time without write command
or with write command and BC4
ODTH4
ODT high time with Write command
and BL8
ODTH8
-
-
8
nCK
nCK
RTT dynamic change skew
tADC
0.3
0.7
0.3
0.7
tCK(avg)
Power-up and reset calibration time
tZQinit
512
-
512
-
nCK
Normal operation full calibration time
tZQoper
256
-
256
-
nCK
Normal operation short calibration time
tZQCS
64
-
64
-
nCK
23
First DQS pulse rising edge after write
leveling mode is programmed
tWLMRD
40
nCK
3
AMS73CAG01808RA Rev. 1.0 December 2010
26
-
40
-
AMS73CAG01808RA
-H7 (DDR3-1066)
-I9 (DDR3-1333)
Symbol
Min
Min
tWLDQSEN
25
Write leveling setup time from rising CK,
CK crossing to rising DQS, DQS crossing
tWLS
245
Write leveling hold time from rising DQS,
DQS crossing to rising CK, CK crossing
tWLH
245
Write leveling output delay
tWLO
0
9
0
9
ns
Write leveling output error
tWLOE
0
2
0
2
ns
Parameter
DQS, DQS delay after write leveling
mode is pro-grammed
Max
-
25
195
195
Max
-
Unit
Note
nCK
3
ps
ps
Absolute clock period
tCK(abs)
Absolute clock high pulse width
tCH(abs)
0.43
-
0.43
-
tCK(avg)
30
Absolute clock low pulse width
tCL(abs)
0.43
-
0.43
-
tCK(avg)
31
Clock period jitter
tJIT(per)
-90
90
-80
80
ps
tJIT(per,lck)
-80
80
-70
70
ps
tJIT(cc)
-
180
-
160
ps
Cycle to cycle period jitter during DLL
locking period
tJIT(cc,lck)
-
160
-
140
ps
Cumulative error across 2 cycles
tERR(2per)
-132
132
-118
118
ps
Cumulative error across 3 cycles
tERR(3per)
-157
157
-140
140
ps
Cumulative error across 4 cycles
tERR(4per)
-175
175
-155
155
ps
Cumulative error across 5 cycles
tERR(5per)
-188
188
-168
168
ps
Cumulative error across 6 cycles
tERR(6per)
-200
200
-177
177
ps
Cumulative error across 7 cycles
tERR(7per)
-209
209
-186
186
ps
Cumulative error across 8 cycles
tERR(8per)
-217
217
-193
193
ps
Cumulative error across 9 cycles
tERR(9per)
-224
224
-200
200
ps
Cumulative error across 10 cycles
tERR(10per)
-231
231
-205
205
ps
Cumulative error across 11 cycles
tERR(11per)
-237
237
-210
210
ps
Cumulative error across 12 cycles
tERR(12per)
-242
242
-215
215
ps
Cumulative error across
n = 13,14,...49,50 cycles
tERR(nper)
Clock period jitter during DLL locking
period
Cycle to cycle period jitter
AMS73CAG01808RA Rev. 1.0 December 2010
tCK(avg)min + tCK(avg)max + tCK(avg)min + tCK(avg)max +
tJIT(per)min
tJIT(per)max
tJIT(per)min
tJIT(per)max
tERR(nper)min = (1 + 0.68ln(n))*tJIT(per)min
tERR(nper)max = (1 + 0.68ln(n))*tJIT(per)max
27
ps
ps
32
AMS73CAG01808RA
Notes for AC Electrical Characteristics
NOTE :
1. Actual value dependant upon measurement level definitions which are TBD.
2. Commands requiring a locked DLL are: READ (and READA) and synchronous ODT commands.
3. The max values are system dependent.
4. WR as programmed in mode register.
5. Value must be rounded-up to next higher integer value.
6. There is no maximum cycle time limit besides the need to satisfy the refresh interval, tREFI.
7. ODT turn on time (min.) is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time (max.) is when the ODT resistance is fully on. Both are measured from ODTLon.
8. ODT turn-off time (min.) is when the device starts to turn-off ODT resistance. ODT turn-off time (max.) is when
the bus is in high impedance. Both are measured from ODTLoff.
9. tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR / tCK to the next integer.
10. WR in clock cycles as programmed in MR0.
11. The maximum read postamble is bound by tDQSCK(min) plus tQSH(min) on the left side and tHZ(DQS)max on
the right side.
12. Output timing deratings are relative to the SDRAM input clock. When the device is operated with input clock jitter,
this parameter needs to be derated by TBD.
13. Value is only valid for RON34.
14. Single ended signal parameter. Refer to the section of tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Notes for definition
and measurement method.
15. tREFI depends on operating case temperature (Tc).
16. tIS(base) and tIH(base) values are for 1V/ns command/addresss single-ended slew rate and 2V/ns CK, CK
differential slew rate, Note for DQ and DM signals, VREF(DC) = VREFDQ(DC). For input only pins except RESET,
VREF(DC) = VREFCA(DC). See Address / Command Setup, Hold and Derating section.
17. tDS(base) and tDH(base) values are for 1V/ns DQ single-ended slew rate and 2V/ns DQS, DQS differential slew
rate. Note for DQ and DM signals,VREF(DC)= VREFDQ(DC). For input only pins except RESET, VREF(DC) =
VREFCA(DC). See Data Setup, Hold and and Slew Rate Derating section.
18. Start of internal write transaction is defined as follows ;
For BL8 (fixed by MRS and on-the-fly) : Rising clock edge 4 clock cycles after WL.
For BC4 (on-the-fly) : Rising clock edge 4 clock cycles after WL.
For BC4 (fixed by MRS) : Rising clock edge 2 clock cycles after WL.
19. The maximum read preamble is bound by tLZDQS(min) on the left side and tDQSCK(max) on the right side.
20. CKE is allowed to be registered low while operations such as row activation, precharge, autoprecharge or refresh
are in progress, but power-down IDD spec will not be applied until finishing those operation.
21. Although CKE is allowed to be registered LOW after a REFRESH command once tREFPDEN(min) is satisfied,
there are cases where additional time such as tXPDLL(min) is also required.
22. Defined between end of MPR read burst and MRS which reloads MPR or disables MPR function.
23. One ZQCS command can effectively correct a minimum of 0.5 % (ZQCorrection) of RON and RTT impedance error
within 64 nCK for all speed bins assuming the maximum sensitivities specified in the “Output Driver Voltage and
Temperature Sensitivity” and “ODT Voltage and Temperature Sensitivity” tables. The appropriate interval between
ZQCS commands can be determined from these tables and other application specific parameters.
One method for calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and voltage
(Vdriftrate) drift rates that the SDRAM is subject to in the application, is illustrated. The interval could be defined by
the following formula:
ZQCorrection
(TSens x Tdriftrate) + (VSens x Vdriftrate)
where TSens = max(dRTTdT, dRONdTM) and VSens = max(dRTTdV, dRONdVM) define the SDRAM temperature
and voltage sensitivities.
AMS73CAG01808RA Rev. 1.0 December 2010
28
AMS73CAG01808RA
24. The tIS(base) AC150 specifications are adjusted from the tIS(base) specification by adding an additional 100 ps of
derating to accommodate for the lower alternate threshold of 150 mV and another 25 ps to account for the earlier
reference point [(175 mv - 150 mV) / 1 V/ns].
25. Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the consecutive
crossing of VREF(DC).
26. tDQSL describes the instantaneous differential input low pulse width on DQS - DQS, as measured from one falling
edge to the next consecutive rising edge.
27. tDQSH describes the instantaneous differential input high pulse width on DQS - DQS, as measured from one rising
edge to the next consecutive falling edge.
28. tDQSH,act + tDQSL,act = 1 tCK,act ; with tXYZ,act being the actual measured value of the respective timing
parameter in the application.
29. tDSH,act + tDSS,act = 1 tCK,act ; with tXYZ,act being the actual measured value of the respective timing parameter
in the application.
30. tCH(abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the following
falling edge.
31. tCL(abs) is the absolute instantaneous clock low pulse width, as measured from one falling edge to the following
rising edge.
32. n = from 13 cycles to 50 cycles. This row defines 38 parameters.
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AMS73CAG01808RA
Package Diagram (x8)
78-Ball Fine Pitch Ball Grid Array Outline
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