BF799 NPN Silicon RF Transistor 3 For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners 2 1 Type Marking BF799 LKs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 20 Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 3 Collector current IC 35 Peak collector current, ICM 50 Peak base current IBM 15 Total power dissipation Ptot 280 mW Junction temperature Tj 150 °C Storage temperature Tstg V mA TS 69 °C 1) -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS 290 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Apr-15-2003 BF799 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 20 - - V(BR)CBO 30 - - V(BR)EBO 3 - - ICBO - - 100 DC characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Base-emitter breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current nA VCB = 20 V, IE = 0 DC current gain - hFE IC = 5 mA, VCE = 10 V 35 95 - IC = 20 mA, VCE = 10 V 40 100 250 VCEsat - 0.1 0.3 VBEsat - - 0.95 Collector-emitter saturation voltage V IC = 20 mA, IB = 2 mA Base-emitter saturation voltage IC = 20 mA, IB = 2 mA AC characteristics MHz fT Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz - 800 - IC = 20 mA, VCE = 8 V, f = 100 MHz - 1100 - Cob - 0.96 - Ccb - 0.7 - Cce - 0.28 - F - 3 - dB g22e - 60 - S Output capacitance pF VCB = 10 V, IE = 0 mA, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz, ZS = 50 Output conductance IC = 20 mA, VCE = 10 V, f = 35 MHz 2 Apr-15-2003 BF799 Total power dissipation Ptot = f(TS) 320 mW Ptot 240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp ) 10 3 10 3 Ptotmax / PtotDC RthJS K/W 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 -3 10 -2 s tp 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Apr-15-2003 BF799 Transition frequency fT = f (IC) Collector-base capacitance Ccb = f (VCB ) f = 100MHz f = 1 MHz 1200 fT BF 799 EHT07116 MHz 1.5 Ccb 1000 BF 799 EHT07117 pF VCE = 5 V 1.0 800 600 2V 0.5 400 200 0 0 10 20 30 0 40 mA 50 ΙC 0 10 V 20 VCB 4 Apr-15-2003