AO4464 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4464 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4464 is Pb-free (meets ROHS & Sony 259 specifications). AO4464L is a Green Product ordering option. AO4464 and AO4464L are electrically identical. VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C ID IDM TA=70°C TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V 50 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 7.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 8.5 Pulsed Drain Current B Power Dissipation Maximum 30 RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W AO4464 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 20 VGS=10V, ID=8.5A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=5A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 10 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8.5A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω Units V µA 100 nA 1.7 3 V 20 26 29.2 38 31 40 A 17 0.76 680 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs 1 5 VGS(th) IS 0.004 TJ=55°C IGSS RDS(ON) Max 30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current Typ mΩ mΩ S 1 V 4.3 A 820 pF 102 pF 77 pF 3.6 Ω 13.84 17 nC 6.74 8.1 nC 3 1.84 nC 3.32 nC 4.5 6.5 4.2 6.3 ns ns 20.1 30 ns 4.9 7.5 ns trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 17.2 Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 8.6 21 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 0: Mar 2006 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 4.5V 25 5V 6V 12 ID(A) ID (A) 20 VDS=5V 16 4V 15 3.5V 8 10 125°C 5 25°C 4 VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 Normalized On-Resistance 1.6 40 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 45 VGS=4.5V 35 30 25 20 VGS=10V 15 VGS=10V 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 1.0E+00 50 ID=8.5A 1.0E-01 40 IS (A) RDS(ON) (mΩ) 2.5 125°C 125°C 1.0E-02 25°C AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES 30 1.0E-03 25°C ARE NOT AUTHORIZED. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 Capacitance (pF) 8 VGS (Volts) 1000 VDS=15V ID=8.5A 6 4 Ciss 600 400 Coss 2 200 0 0 0 2 4 6 8 10 12 14 Crss 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 50 RDS(ON) limited 100µs 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 1 10 100 ZθJA Normalized Transient Thermal Resistance 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=40°C/W 20 0 0.001 VDS (Volts) 10 30 10 10s 0.1 0.1 30 TJ(Max)=150°C TA=25°C 40 10µs 1ms Power (W) ID (Amps) 100.0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS NOT ASSUME ANY LIABILITY ARISING 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000