Fairchild FCX1149A Sot89 pnp silicon power (switching) transistor Datasheet

SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
FCX1149A
ISSSUE 1 - SEPTEMBER 1999
FEATURES
*
2W POWER DISSIPATION
*
*
*
*
20A Peak Pulse Current
Excellent HFE Characteristics up to 10 Amps
Extremely Low Saturation Voltage E.g. 45mv Typ.
Extremely Low Equivalent On-resistance;
RCE(sat)67mat 3A
C
E
C
Partmarking Detail -
B
149
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
-30
V
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current **
ICM
-10
A
Continuous Collector Current
IC
-3
A
Base Current
IB
-500
mA
Power Dissipation at Tamb=25°C
Ptot
1 †
2 ‡
W
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
† recommended Ptot calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
FCX1149A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VALUE
PARAMETER
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
-30
V
IC=-100A
Collector-Emitter
Breakdown Voltage
V(BR)CES
-25
V
IC=-100A
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-25
V
IC=-10mA*
Collector-Emitter
Breakdown Voltage
V(BR)CEV
-25
V
IC=-100A, VEB=+1V
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100A
Collector Cut-Off Current
ICBO
-0.3
-100
nA
VCB=-24V
Emitter Cut-Off Current
IEBO
-0.3
-100
nA
VEB=-4V
Collector Emitter Cut-Off
Current
ICES
-0.3
-100
nA
VCES=-20V
Collector-Emitter
Saturation Voltage
VCE(sat)
-45
-100
-140
-200
-230
-80
-170
-240
-300
-350
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1mA*
IC=-0.5A, IB=-3mA*
IC=-1A, IB=-7mA*
IC=-3A, IB=-100mA*
IC=-4A, IB=-140mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-930
-1050
mV
IC=-3A, IB=-100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-840
-1000
mV
IC=-3A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
135
MHz
IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Ccb
50
pF
VCB=-10V, f=1MHz
Switching Times
ton
150
ns
IC=-4A, IB=-40mA,
VCC=-10V
toff
270
ns
IC=-4A, IB=40mA,
VCC=-10V
270
250
150
115
450
400
260
190
50
IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-3.0A, VCE=-2V*
IC=-5.0A, VCE=-2V*
IC=-10.0A, VCE=-2V*
800
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
FCX1149A
TYPICAL CHARACTERISTICS
1.0
1.0
+25°C
0.8
VCE(sat) - (V)
VCE(sat) - (V)
0.8
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=200
0.6
0.4
-55°C
+25°C
+100°C
0.6
0.4
0.2
0.2
0
IC/IB=100
1m
10m
100m
1
10
0
100
1m
10m
IC - Collector Current (A)
VCE(sat) v IC
750
10
+100°C
+25°C
-55°C
500
1.2
250
0.8
-55°C
+25°C
+100°C
0.4
0
1m
10m
100m
1
10
0
100
1m
IC - Collector Current (A)
hFE v IC
1.2
100m
1
10
100
10
IC - Collector Current (A)
VCE=2V
0.4
-55°C
+25°C
+100°C
1m
10m
IC - Collector Current (A)
VBE(sat) v IC
0.8
0
100
IC/IB=100
VBE(sat) - (V)
hFE - Typical Gain
1
1.6
VCE=2V
VBE(on) - (V)
100m
IC - Collector Current (A)
VCE(sat) v IC
10m
100m
1
10
IC - Collector Current (A)
VBE(on) v IC
100
1
100m
10m
100m
DC
1s
100ms
10ms
1ms
100us
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100
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