SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance; RCE(sat)67mat 3A C E C Partmarking Detail - B 149 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -30 V VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ** ICM -10 A Continuous Collector Current IC -3 A Base Current IB -500 mA Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. FCX1149A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VALUE PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V(BR)CBO -30 V IC=-100A Collector-Emitter Breakdown Voltage V(BR)CES -25 V IC=-100A Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA* Collector-Emitter Breakdown Voltage V(BR)CEV -25 V IC=-100A, VEB=+1V Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100A Collector Cut-Off Current ICBO -0.3 -100 nA VCB=-24V Emitter Cut-Off Current IEBO -0.3 -100 nA VEB=-4V Collector Emitter Cut-Off Current ICES -0.3 -100 nA VCES=-20V Collector-Emitter Saturation Voltage VCE(sat) -45 -100 -140 -200 -230 -80 -170 -240 -300 -350 mV mV mV mV mV IC=-0.1A, IB=-1mA* IC=-0.5A, IB=-3mA* IC=-1A, IB=-7mA* IC=-3A, IB=-100mA* IC=-4A, IB=-140mA* Base-Emitter Saturation Voltage VBE(sat) -930 -1050 mV IC=-3A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -840 -1000 mV IC=-3A, VCE=-2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 135 MHz IC=-50mA, VCE=-10V f=50MHz Output Capacitance Ccb 50 pF VCB=-10V, f=1MHz Switching Times ton 150 ns IC=-4A, IB=-40mA, VCC=-10V toff 270 ns IC=-4A, IB=40mA, VCC=-10V 270 250 150 115 450 400 260 190 50 IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-3.0A, VCE=-2V* IC=-5.0A, VCE=-2V* IC=-10.0A, VCE=-2V* 800 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX1149A TYPICAL CHARACTERISTICS 1.0 1.0 +25°C 0.8 VCE(sat) - (V) VCE(sat) - (V) 0.8 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.6 0.4 -55°C +25°C +100°C 0.6 0.4 0.2 0.2 0 IC/IB=100 1m 10m 100m 1 10 0 100 1m 10m IC - Collector Current (A) VCE(sat) v IC 750 10 +100°C +25°C -55°C 500 1.2 250 0.8 -55°C +25°C +100°C 0.4 0 1m 10m 100m 1 10 0 100 1m IC - Collector Current (A) hFE v IC 1.2 100m 1 10 100 10 IC - Collector Current (A) VCE=2V 0.4 -55°C +25°C +100°C 1m 10m IC - Collector Current (A) VBE(sat) v IC 0.8 0 100 IC/IB=100 VBE(sat) - (V) hFE - Typical Gain 1 1.6 VCE=2V VBE(on) - (V) 100m IC - Collector Current (A) VCE(sat) v IC 10m 100m 1 10 IC - Collector Current (A) VBE(on) v IC 100 1 100m 10m 100m DC 1s 100ms 10ms 1ms 100us 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100